Surface emitting lasers are of interest for various applications such as monolithic two-dimensional arrays and optical interconnects for integrated optics. Moreover, surface emitting lasers offer the advantage of wafer processing and testing. Several approaches for achieving surface emission are described. In addition, TRW s fabrication of a large monolithic two dimensional array of GaAs/AlGaAs surface emitting lasers which contains a total of 100 lasers is reported. 相似文献
The suitability of ormosils as photonic materials was investigated. Vinyl and phenyl silicates were synthesised below 100°C. A detailed assignment of mid-infrared vibrational absorption bands is given. This allowed assignment of overtone and combination bands in the near-infrared region and an assessment of residual water contamination, which is low and can be expelled by evacuation. These ormosils have low intrinsic and extrinsic optical absorption in the visible spectral region and at useful wavelengths in the near-infrared. 相似文献
Suppose that is the set of connected graphs such that a graph G if and only if G satisfies both (F1) if X is an edge cut of G with |X|3, then there exists a vertex v of degree |X| such that X consists of all the edges incident with v in G, and (F2) for every v of degree 3, v lies in a k-cycle of G, where 2k3.In this paper, we show that if G and (G)3, then for every pair of edges e,fE(G), G has a trail with initial edge e and final edge f which contains all vertices of G. This result extends several former results. 相似文献
High quality InAlN/GaN heterostructures are successfully grown on the (0 0 0 1) sapphire substrate by pulsed metal organic chemical vapor deposition. The InAlN barrier layer with an indium composition of 17% is observed to be nearly lattice matched to GaN layer, and a smooth surface morphology can be obtained with root mean square roughness of 0.3 nm and without indium droplets and phase separation. The 50 mm InAlN/GaN heterostructure wafer exhibits a mobility of 1402 cm2/V s with a sheet carrier density of 2.01×1013 cm?2, and a low average sheet resistance of 234 Ω/cm2 with a sheet resistance nonuniformity of 1.22%. Compared with the conventional continual growth method, PMOCVD reduces the growth temperature of the InAlN layer and the Al related prereaction in the gas phase, and consequently enhances the surface migration, and improves the crystallization quality. Furthermore, indium concentration of InAlN layer can be controlled by adjusting the pulse time ratio of TMIn to TMAl in a unit cycle, the growth temperature and pressure, as well as the InAlN layer thickness by the number of unit cycle repeats. 相似文献
In this paper, it is proved that for n 2, any horizontallyhomothetic submersion : Rn+1 (Nn, h) is a Riemannian submersionup to a homothety. It is also shown that if : Sn+1 (Nn, h)is a horizontally homothetic submersion, then n = 2m, (Nn, h)is isometric to CPm and, up to a homothety, is a standard Hopffibration S2m+1 CPm. 2000 Mathematics Subject Classification53C20, 53C12. 相似文献
We report that hybridizing semiconductor quantum dots with plasmonic metamaterial leads to a multifold intensity increase and narrowing of their photoluminescence spectrum. The luminescence enhancement is a clear manifestation of the cavity quantum electrodynamics Purcell effect and can be controlled by the metamaterial's design. This observation is an essential step towards understanding loss compensation in plasmonic metamaterials with gain media and for developing metamaterial-enhanced gain media. 相似文献
In this research, the n-butyl palmitate was synthesized using the esterification reaction of the PA with n-butanol. The 1H nuclear magnetic resonance and Fourier transform infrared illustrated that the hydroxyl group and carboxyl group disappeared, and the ester bond appeared after the reaction, explaining that n-butyl palmitate was successfully fabricated. The differential scanning calorimetry indicated that the phase-transition temperature and latent heat are 12.6 °C and 127.1 J g?1, which was suited to use in low-temperature fields such as food, pharmaceutical, and biomedical. The thermogravimetric analysis suggested that it had great thermal stability during the phase change process. In addition, the thermal conductivity of the n-butyl palmitate was slightly higher than other fatty acid ester, and the 500 thermal cycles test results indicated that it had excellent thermal reliability. Therefore, the n-butyl palmitate is deduced to share great thermal energy storage ability in terms of latent heat thermal energy system applications.