在不同激光脉宽下的高次谐波

用数值计算方法计算了不同强激光脉冲宽度下高次谐波的产生.我们发现对于激光场强度不高,不能有效电离初态的激光场,长脉冲宽度可以更有效产生高次谐波;而对于高场强的激光场,由于它能够在几个光学周期之内把原子的初态全部电离,所以短脉冲的激光场能够更有效产生高次谐波.     

一维光学格子孤子的传输特性及控制研究

利用解析和数值方法研究了在具有横向折射率周期性调制的克尔型非线性介质中光学格子孤子的传输，得到了孤子参数的演化方程以及格子孤子的形成和稳定传输的条件.结果表明：当光束的入射角小于某临界角度时，光束可被类似波导形式的路径俘获而稳定传输，该临界角随折射率调制周期、调制深度的增加而增大，且光束越窄临界值越大.此外，线性空间啁啾虽然对光束传输的中心位置没有任何影响，但会导致光束发散从而破坏格子孤子的形成和稳定传输，对此提出了采用特定功率取值来补偿啁啾作用从而形成格子孤子的方案. 关键词： 光孤子 光学格子 光传输 矩方法     

基于同步辐射加速器的康普顿背散射γ射线源(Ⅰ)产生MeV量级γ光子的数值计算

提出在筹建的上海同步辐射装置上建造一条MeV量级γ射线束及应用站,采用μm波长的红外(或远红外)激光与储存环中3.5GeV电子束进行康普顿背散射,从而获得能区为1—25MeV的康普顿背散射γ光子束,该光子束具有高强度、高极化度(线和圆极化)、准单色、方向性好的优点,可以广泛地应用于核物理和核天体物理基础研究及相关的应用研究领域.介绍了康普顿背散射的基本原理,并结合储存环参数给出了光子束性能的数值计算结果.     

Asymptotic Analysis of the Current-Voltage Curve of a pnpn Semiconductor Device

We consider the one-dimensional steady-state semiconductor deviceequations modelling a pnpn device. There are two relevant scalingsof the equations corresponding to small and large applied voltages.In both scalings, the semiconductor equations can be consideredas singularly perturbed. It turns out that the small-voltagescaling breaks down for current values between two saturationcurrents. In that interval, the large-voltage scaling has tobe employed. For both scalings, we derive the first-order termsof an asymptotic expansion and show that the reduced problemhas a solution. An example verifies that the current-voltagecurves obtained have the expected qualitative structure.     

The structure of invertible substitutions on a three-letter alphabet

We study the structure of invertible substitutions on three-letter alphabet. We show that there exists a finite set of invertible substitutions such that any invertible substitution can be written as I_wσ₁σ₂σ_k, where I_w is the inner automorphism associated with w, and for 1jk. As a consequence, M is the matrix of an invertible substitution if and only if it is a finite product of non-negative elementary matrices.     

Band bending at the Ni/Si(100)-2×1 submonolayer interface

Band bending at the Ni/Si(100)-2×1 interface has been monitored by using Si 2p core level photoemission spectra. Two nickel-induced Si 2p components appear in the initial interaction between Ni and Si(100)-2×1, which is confined at the top surface and the first subsurface layers. At Ni coverage less than 0.0375 ML, Ni atoms prefer the adamantane interstitial sites on the first subsurface, but switch to the pedestal sites on Si dimer rows at higher Ni coverage. The change in the preferred occupation sites of Ni atoms on the Si(100)-2×1 surface strongly affects the amount of band bending shift. The shift towards higher binding energy, when Ni atoms occupy the adamantane interstitial sites, is attributed to metal-induced-gap states. While Ni atoms occupy the pedestal sites, the band bending shift is reduced which is attributed to the passivation of surface states.     

Synthesis and chiroptical properties of two new planar-chiral macrocycles

Could simple intraannular-arm macrocyclic systems exist in enantiopure stable forms? The effective synthesis of two representative compounds of such a class, their resolution into enantiomers, and experiments justifying their stability toward racemization are presented.     

抽指加权宽带扇形叉指声表面波滤波器的等效电路分析

扇形换能器可以看成若干个沿孔径方向划分的均匀孔径换能器电端并联而成，根据梅森(Mason)等效电路模型以及由其延伸的混合场等效电路模型，推导出整个扇形换能器的导纳矩阵和频率响应，其中采用复阻抗模型考虑了叉指电极与自由表面的阻抗不连续的因素。本方法能够模拟指间反射、三次行程、指条寄生阻抗以及外围电路等对器件性能的影响；理论模拟与实验结果吻合。     

一类含有P-Laplacian算子的奇异边值问题解的确切个数

讨论了一类p-L ap lac ian算子型的奇异边值问题正解的确切个数以及解的性质.     

Size complementarity in anion recognition by neutral macrocyclic tetraamides

Comparison of the anion binding properties of a series of uncharged macrocyclic tetraamides reveal significant effects of the receptor's size on the strength of its anion complexes. This study allowed for estimation of the optimal size of a macroring for complexation of common anions.