一维半导体的光学吸收

研究一维半导体在外电磁场中的光吸收、涉及电子带间的直接跃迁与间接跃迁，考虑了电子－空穴相互作用的激子光吸收，导出一维半导体的光吸收系数公式。     

A flow tube study of methyl iodine uptake on soot surface

The black carbon aerosols are now recognized for their potential impact on climate and the halogenated compounds are thought to be very important in atmospheric chemistry. However, there are very few studies on the interactions between soot aerosols and halogenated compounds. We report the measurement of the uptake of CH₃I on soot. The measured uptake coefficient is 0.0103 ± 0.0015 at a total pressure of 2–4 Torr and 298 K. The results suggest that the uptake of CH₃I occurs efficiently on soot particles. The present work suggests that heterogeneous loss of CH₃I on soot may influence the concentration of CH₃I throughout the atmosphere.     

Growth of single-crystal magnetite nanowires from Fe3O4 nanoparticles in a surfactant-free hydrothermal process

Single-crystal magnetite nanowires with average diameter of ca. 20 nm and length of up to several micrometers were prepared by a simple alkaline surfactant-free hydrothermal process. The crystallinity, purity, morphology, and structural features of the as-prepared magnetite nanowires were investigated by powder X-ray diffraction, transmission electron microscopy (TEM) and selected area electron diffraction. The composition and length of nanowires depends on the pH, with higher pH favoring longer nanowires composed entirely of Fe₃O₄. A mechanism for nanowire growth is proposed.     

基于线性耦合下混沌系统的同步条件

将混沌同步问题用精确的数学语言给予描述，通过数学分析将其转化为微分方程组的稳定性问题.以Lorenz系统族的Chen氏系统作为典型系统，在线性耦合下分析系统参数，得到了系统达到同步时的充分条件，且在理论上加以证明.结合该条件，提出了一种确定耦合系数的方法.最后用仿真实验验证了该方法的正确性，并验证了在不同耦合方式和参考系统的情况下定理的有效性. 关键词： 混沌同步 耦合 稳定性     

动力系统简介

本文对动力系统这一学科的历史、理论、应用以及与其他学科的联系作一简介.     

荧光光纤温度传感器激励光源的选择

本文分析计算了荧光光纤温度传感器的温敏元件——GsAlAs/GaAs双异质结半导体材料的荧光辐射效率与激励光波长的关系。讨论了温度测量范围及温敏元件GaAlAs层铝含量对激励光源的限制,在0～200℃测温范围内,若采用LED作激励光源,其峰值波长应在0.70～0.76μm之间选择。     

大非线性相移下光学非线性Z扫描特性的研究

采用高斯分解法(GD)对大非线性相移下的Z扫描特性进行了分析，通过对数值算法的优化，将GD推广到对脉冲入射激光下大非线性相移下的Z扫描理论分析.对不同条件下大非线性相移Z扫描曲线峰谷结构的比较，发现在大非线性相移的情况下，Z扫描曲线的峰和谷随透过光阑或入射光强变化表现出某些新的特性.随着透过光阑孔径的增加，Z扫描曲线峰的变化要明显快于谷的变化，而且在谷明显存在的情况下，峰很快消失.采用皮秒脉冲激光下的纯二硫化碳实验对理论结果加以验证，实验结果和理论分析相一致.我们的分析结果对大非线性相移下Z扫描测量有一定的指导性意义，避免在大非线性相移下对Z扫描结果产生错误的分析. 关键词： 大非线性相移 高斯分解法 Z扫描     

Discrete-time GI/Geo/1 queue with multiple working vacations

Consider the discrete time GI/Geo/1 queue with working vacations under EAS and LAS schemes. The server takes the original work at the lower rate rather than completely stopping during the vacation period. Using the matrix-geometric solution method, we obtain the steady-state distribution of the number of customers in the system and present the stochastic decomposition property of the queue length. Furthermore, we find and verify the closed property of conditional probability for negative binomial distributions. Using such property, we obtain the specific expression for the steady-state distribution of the waiting time and explain its two conditional stochastic decomposition structures. Finally, two special models are presented.      

三种瓜环与4,4′-联吡啶及N,N′-二甲基4,4′-联吡啶盐酸盐相互作用的研究

以七元瓜环(Q[7])和新型椭圆型改性瓜环———对称四甲基取代六元瓜环(TM eQ[6])为主体,4,4′-联吡啶的盐酸盐(44)以及N,N′-二甲基4,4′-联吡啶的盐酸盐(dm44)为客体的主客体相互作用进行了考察.实验结果表明,Q[7]与客体44及dm44作用体系中,客体为了更有效地被主体Q[7]包结,在Q[7]内腔中呈倾斜状分布的几率最高.用核磁共振、循环伏安以及紫外吸收光谱对实验结果进行了印证和补充,验证了TM eQ[6]与客体44及dm44可发生较强的相互作用,形成一维的自组装超分子结构.核磁共振以及循环伏安方法的实验结果表明,没有观察到Q[6]与客体44及dm44的明显作用,而紫外吸收光谱方法证实,Q[6]与客体44确实存在一定的相互作用,比较主客体的结构特征,该作用体系也可能存在自组装的一维超分子结构等多种作用形式.     

Optical properties of In2O3 oxidized from InN deposited by reactive magnetron sputtering

Unintentionally doped and zinc-doped indium nitride (U-InN and InN:Zn) films were deposited on (0 0 0 1) sapphire substrates by radio-frequency reactive magnetron sputtering, and all samples were then treated by annealing to form In₂O₃ films. U-InN and InN:Zn films have similar photon absorption characteristics. The as-deposited U-InN and InN:Zn film show the absorption edge, ∼1.8-1.9 eV. After the annealing process at 500 °C for 20 min, the absorption coefficient at the visible range apparently decreases, and the absorption edge is about 3.5 eV. Two emission peaks at 3.342 eV (371 nm) and 3.238 eV (383 nm) in the 20 K photoluminescence (PL) spectrum of In₂O₃:Zn films were identified as the free-exciton (FE) or the near band-to-band (B-B) and conduction-band-to-acceptor (C-A) recombination, respectively.