Search for pi(0)-->nu(mu)nu(mu) decays in the LSND detector

We observe a net beam excess of 8.7+/-6.3(stat)+/-2.4(syst) events, above 160 MeV, resulting from the charged-current reaction of nu(micro) and/or nu;(mu) on C and H in the LSND detector. No beam-related muon background is expected in this energy regime. Within an analysis framework of pi(0)-->nu(mu)nu;(mu), we set a direct upper limit for this branching ratio of Gamma(pi(0)-->nu(mu)nu;(mu))/Gamma(pi(0)-->all)<1.6 x 10(-6) at 90% confidence level.     

A possibility of parallel and anti-parallel diffraction measurements on neutron diffractometer employing bent perfect crystal monochromator at the monochromatic focusing condition

In a conventional diffractometer having single monochromator, only one position, parallel position, is used for the diffraction experiment (i.e. detection) because the resolution property of the other one, anti-parallel position, is very poor. However, a bent perfect crystal (BPC) monochromator at monochromatic focusing condition can provide a quite flat and equal resolution property at both parallel and anti-parallel positions and thus one can have a chance to use both sides for the diffraction experiment. From the data of the FWHM and the Δd/d measured on three diffraction geometries (symmetric, asymmetric compression and asymmetric expansion), we can conclude that the simultaneous diffraction measurement in both parallel and anti-parallel positions can be achieved.     

Mössbauer Studies and Magnetic Properties of Y3−x Ce x Fe5O12

It is shown that in-situ ^166mHo (I = 7) in a spherical single crystal of HoF₃ can be used as sensitive internal thermometer to thermally detect NMR (NMR-TDNO) from the 100% abundant stable ¹⁶⁵Ho (I = 7/2) nuclei. In addition, new ^166mHo NMRON results are reported. Both the ^166mHo NMRON and ¹⁶⁵Ho NMR-TDNO spectra show three distinct quadrupolar split sub-resonances, in zero applied field. The data is used to make estimates of the Ho magnetic moments and quadrupole parameters for the ^166mHo and ^166mHo sites.     

Phase transition characteristics of Ge–Sb–Te pseudobinary alloys in laser irradiation measurement

Optical switching and structural transformation of GeTe–Sb₂Te₃ pseudobinary alloys, Ge₂Sb₂Te₅, Ge₁Sb₂Te₄, and Ge₁Sb₄Te₇, were studied for data storage application. As-deposited Ge₂Sb₂Te₅, Ge₁Sb₂Te₄, and Ge₁Sb₄Te₇ thin films were amorphous and they crystallized to FCC and HCP upon heat treatment. Crystallization was accelerated by increasing the proportion of Sb₂Te₃ rather than GeTe in Ge–Sb–Te compounds; this was observed by reflectivity changes under nanosecond laser irradiation in static tester. The different crystallization kinetics according to composition might be affected by the structural incompatibility of GeTe under the ‘Umbrella Flip’ theory.     

Effect of Ca interlayer thickness on electron injection of lithium quinolate/Ca/Al cathodes

Electron injection behavior of lithium quinolate (Liq)/Ca/Al cathode was investigated by using X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy (UPS). Interfacial energy barrier lowering of Liq/Ca/Al cathode was dependent on Ca thickness and maximum energy level shift was observed at a Ca thickness of 1 nm. Maximum current density could be obtained in Liq/Ca/Al device at a Ca thickness of 1 nm and it was well correlated with energy level shift from UPS measurement. Power efficiency of Liq/Al device could be improved by more than 70% by inserting Ca layer between Liq and Al.     

Nanoscale retention‐loss dynamics of polycrystalline PbTiO3 nanotubes

We observed the nanoscale retention dynamics of polycrystalline PbTiO₃ nanotubes using piezoresponse force microscopy. We found that the retention loss of the nanodot domains on the nanotubes showed the stretched exponential relaxation behaviors with stretched exponential factor n being less than 1 (0.523 and 0.692), which are similar to the thin films. In addition, the nanodot domains showed a diverse relaxation time constant τ due to different remnant polarization of each dot domains. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Improved device performance in nonpolar a ‐plane GaN LEDs using a Ni/Al/Ni/Au n‐type ohmic contact

The authors report upon the increased light‐output power (P_out) via a reduction in the forward voltage (V_f) for nonpolar a ‐plane GaN LEDs using Ni/Al/Ni/Au n‐type ohmic contacts. The specific contact resistivity of the Ni/Al/Ni/Au contact is found to be as low as 5.6 × 10^–5 whereas that of a typical Ti/Al/Ni/Au contact is 6.8 × 10^–4 Ω cm², after annealing at 700 °C. The X‐ray photoelectron spectroscopy results show that the upward surface band bending is less pronounced for the Ni/Al contact compared to the Ti/Al contact, leading to a decrease in the effective Schottky barrier height (SBH). The V_f of the nonpolar LEDs decreases by 10% and P_out increases by 15% when the Ni/Al/Ni/Au scheme is used instead of the typical Ti/Al/Ni/Au metal scheme. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystallinity and morphology dependent luminescence of Li-doped Y2−xGdxO3:Eu thin film phosphors

The influence of lithium doping on the crystallization, the surface morphology, and the luminescent properties of pulsed laser deposited Y_2−xGd_xO₃:Eu³⁺ thin film phosphors was investigated. The crystallinity, the surface morphology, and the photoluminescence (PL) of films depended highly on the Li-doping and the Gd content. The relationship between the crystalline and morphological structures and the luminescent properties was studied, and Li⁺ doping was found to effectively enhance not only the crystallinity but also the luminescent brightness of Y_2−xGd_xO₃:Eu³⁺ thin films. In particular, the incorporation of Li and Gd into the Y₂O₃ lattice could induce remarkable increase in the PL. The highest emission intensity was observed Li-doped Y_1.35Gd_0.6O₃:Eu³⁺ thin films whose brightness was increased by a factor of 4.6 in comparison with that of Li-doped Y₂O₃:Eu³⁺ thin films.     

Enhanced ferromagnetic properties of diluted Fe doped ZnO with hydrogen treatment

The single-phase diluted magnetic Fe-ion (5%) doped ZnO powders were prepared by solid-state reaction method. The powders were annealed in Ar or Ar/H₂(5%) atmosphere at 1200 °C. The crystal structure, electric and magnetic properties for the Zn_0.95Fe_0.05O powders have been studied with X-ray diffraction (XRD) vibrating sample magnetometer, resistance and Hall measurement. All the peaks for the XRD pattern of samples belong to the hexagonal (P6₃mc) lattice of ZnO, and no indication of a secondary phase. The lattice parameters for the Zn_0.95Fe_0.05O with an annealing in Ar/H₂(5%) atmosphere were a₀=3.256 Å and c₀=5.206 Å at room temperature. The hysteresis curve for the Zn_0.95Fe_0.05O at room temperature was enhanced ferromagnetic behaviour with an annealing in Ar/H₂(5%) atmosphere. We give an explanation for enhanced ferromagnetic behaviour with H₂ treatment by electric properties.