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K. Bharuth-Ram H.P. Gunnlaugsson H. Masenda R. Sielemann G. Weyer U. Köster 《Physica B: Condensed Matter》2012,407(15):2923-2925
The annealing of defects in Sb/Sn implanted diamond has been studied in 119Sn Mössbauer spectroscopy following the implantation of radioactive parent isotopes 119Xe and 119mSn. Our results show that after annealing above 1300 K, 40% of the implanted ions are located at or near regular sites in the lattice. Significant implantation induced defects however remain. 相似文献