高功率激光终端KDP晶体非共线高效三倍频及远场色分离方案数值模拟分析

为满足高功率激光装置对终端光学系统的改进要求,控制3ω光路透射元件厚度以降低激光损伤风险,避免3ω非对称聚焦与色分离元件对靶场调靶产生不利影响,本文利用非共线相位匹配原理讨论了KDP晶体Ⅰ类和Ⅱ类两种和频产生351 nm(3ω)激光及其远场色分离过程.模拟结果表明,室温20?C环境中除目前常用的共线和频外,1053 nm(ω)与526.5 nm(2ω)激光可选择Ⅰ类或Ⅱ类两种非共线和频方式实现高效3ω激光输出并在激光远场实现色分离,且具有足够的高效转换失谐角容宽.计算表明,与Ⅰ类和频类似,Ⅱ类和频也存在一个非临界相位匹配过程,其匹配方向约为θ(3ω)=86.53?.可通过增加晶体厚度克服其有效非线性系数较低的缺点,实现3ω高效输出,失谐角容宽可达±20 mrad.为满足靶场需要,解决非共线角容宽苛刻带来的调节不便,并进一步使光路紧凑,将楔角为12?的熔石英楔板置于倍频晶体之后,ω与2ω激光在熔石英楔板后表面可产生约3.5 mrad分离角.经非共线和频,使用薄透镜即可实现聚焦及色分离.该方案完全满足终端光学系统的改进要求,可作为可靠的备选方案之一.     

高场应力及栅应力下AlGaN/GaN HEMT器件退化研究

采用不同的高场应力和栅应力对AlGaN/GaN HEMT器件进行直流应力测试,实验发现：应力后器件主要参数如饱和漏电流,跨导峰值和阈值电压等均发生了明显退化,而且这些退化还是可以完全恢复的;高场应力下,器件特性的退化随高场应力偏置电压的增加和应力时间的累积而增大;对于不同的栅应力,相对来说,脉冲栅应力和开态栅应力下器件特性的退化比关态栅应力下的退化大.对不同应力前后器件饱和漏电流,跨导峰值和阈值电压的分析表明,AlGaN势垒层陷阱俘获沟道热电子以及栅极电子在栅漏间电场的作用下填充虚栅中的表面态是这些不同应 关键词： AlGaN/GaN HEMT器件 表面态(虚栅) 势垒层陷阱 应力     

不同处理工艺对珍珠的紫外可见漫反射光谱的共性影响研究

主要基于紫外可见（UV-Vis）漫反射光谱首次对比研究了经过热处理、有机或无机染料改色或钴-60产生的γ射线辐照三种不同处理工艺对同为珍珠质的淡水与海水珍珠及贝壳珍珠层的漫反射光谱的影响机制。结果表明：（1）在不同颜色、淡海水属性的珍珠与贝壳珍珠层的UV-Vis反射光谱的紫外区皆存在约280 nm 处的吸收峰,上述吸收峰位归属于珍珠层中自身存在的有机质所致,而非珍珠的致色色素。（2）以上三种不同的处理工艺对上述280 nm处的吸收峰位存在一致的影响行为,即随着不同的处理工艺强度的增大,处理样品对应的反射谱图中约280 nm处吸收峰的强度逐渐降低直至消失。与此同时,珍珠的反射谱图中紫外区的反射主波长的反射强度也随之减弱,且反射主波长的峰位向可见光区发生显著红移。研究工作可为珍珠及珍珠的优化处理的鉴定筛选及其珍珠颜色的形成属性判定提供检测依据与理论支撑。     

Barium ferrite (BaFe12O19) thin films prepared by pulsed laser deposition on MgO buffered Si substrates

Barium ferrite (BaFe₁₂O₁₉) thin films have been deposited by pulsed laser deposition (PLD) on Si substrates with MgO underlayers. The films were deposited in oxygen atmosphere by excimer laser (=248 nm, pulse duration=23 ns) in the temperature range 750–900 °C. The experiments showed that the substrate temperature has remarkable effect on the films magnetic and structural properties. The BaFe₁₂O₁₉ films deposited at 900 °C in 200 mTorr oxygen showed some perpendicular orientation, with a perpendicular squareness of 0.5 and an in-plane squareness of 0.3. Such thin BaFe₁₂O₁₉ films have platelet grains with a size of about 300 nm. The perpendicular saturation magnetization and coercivity are 185 emu/cm³ and 1.4 kOe, respectively. PACS 81.15.Fg.; 75.70.Ak; 75.50.Pp; 68.55.j     

A study of time over threshold (TOT) technique for plastic scintillator counter

A new charge measurement method, time over threshold (TOT), has been used in some gas detectors lately. Here TOT is studied for TOF system, made of plastic scintillator counter, which can simplify the electronics of the system. The signal characteristics are measured and analyzed with a high quality oscilloscope, including noise, pedestal, signal amplitude, total charge, rise time and the correlation between them. The TOT and charge are related and can be fitted by some empirical formula. The charge measurement resolution by TOT is given and this will help the design of TOF electronics.     

Interface solution for writing-induced nano-deformation of slider body

Writing-induced nano-deformation of slider body becomes a big concern when the mechanical spacing between the head and disk is continuously reduced to achieve higher magnetic recording areal density. Reduced head–disk spacing increases the risk of head/disk contact and causes the thermal instability in head–disk interface (HDI). This paper reports authors’ efforts towards exploration of interface solutions for writing-induced instability in ultra-low head–disk spacing magnetic system. Multi-shallow step structure with optimized rail position is analyzed and a new femto slider with such structure is explored. The results of numerical simulation indicate that the multi-shallow step structure is an effective approach in reducing the flying height change caused by the writing-induced nano-deformation of the slider body.     

液晶光阀的偏光显示特性分析

讨论了液晶光阀的偏光扭曲向列性效应, 分析了液晶光阀中液晶分子在交流电场作用下重新取向后的扭曲, 测量了TB3639型液晶光阀在特定的频率连续改变外加交流电压条件下,液晶分子重新取向后的扭曲角度以及液晶光阀的电光特性。测量结果表明,在外加电压连续改变时,入射线偏振光的透射率呈现连续非线性变化,这种非线性变化可以由液晶分子的扭曲量来改变。同时液晶分子180°的扭曲使得液晶光阀具有较陡的电光特性曲线,这对于多通道矩阵寻址方式的液晶光阀而言在矩阵显示中可有更多的通道寻址线和更高的对比度。     

Surface redox induced bipolar switching of transition metal oxide films examined by scanning probe microscopy

The bipolar resistive switching mechanisms of a p-type NiO film and n-type TiO₂ film were examined using local probe-based measurements. Scanning probe-based current–voltage (I–V) sweeps and surface potential/current maps obtained after the application of dc bias suggested that resistive switching is caused mainly by the surface redox reactions involving oxygen ions at the tip/oxide interface. This explanation can be applied generally to both p-type and n-type conducting resistive switching films. The contribution of oxygen migration to resistive switching was also observed indirectly, but only in the cases where the tip was in (quasi-) Ohmic contact with the oxide.     

一种宽能谱多球中子谱仪能量响应的MC模拟

利用蒙特卡罗程序FLUKA模拟计算了聚乙烯慢化球和辅助材料慢化球对低能中子到高能中子的响应函数曲线。结果表明,对纯聚乙烯球来说,随着聚乙烯层厚度的增加,响应曲线峰逐步右移,峰值在高能区有所下降,对20 Me V以上的中子,无论纯聚乙烯球的尺寸有多大,其响应均下降到很低的程度;对辅助材料慢化球来说,中子能量小于1 Me V时,辅助材料慢化球与聚乙烯慢化球的响应曲线相似,但当中子能量大于20 Me V时,中子与辅助材料层发生(n,xn)反应,慢化球的响应呈显著上升趋势。分析计算结果,最终能够确定宽能谱多球中子谱仪的尺寸组合。     

基于OWDP的IP网络性能实时监测系统设计与实现

针对传统的RTDP（往返时延与丢包协议）网络性能测量方法及ping探测方法的不足，设计并实现了一种基于OWDP（单路时延与丢包协议）的新型单路网络性能测量系统。该系统研究网络流量特点和测试流的发送规律，综合考虑了安全策略因素，最后的实验结果表明，系统具有良好的可扩展性，适合对大规模的网络进行实时监测。