Periodic Néel skyrmion transport

In this work, we have used the MuMax3 software to simulate devices consisting of a ferromagnetic thin film placed over a heavy metal thin film. The devices are two interconnected partial-disks where a Néel domain wall is formed in the disks junction. In our simulations we investigate devices with disk radius $r=50$ nm and different distance d between the disks centers (from $d=12$ nm to $d=2R=100$ nm). By applying strong sinusoidal external magnetic fields, we find a mechanism able to create, annihilate and even manipulate a skyrmion in each side of the device. This mechanism is discussed in terms of interactions between skyrmion and domain wall. The Néel domain wall formed in the center of the device interacts with the Néel skyrmion, leading to a process of transporting a skyrmion from one disk to the other periodically. Our results have relevance for potential applications in spintronics such as logical devices.     

Large offset far infrared laser lines generation from the C-O stretching Q-branch of 13CD3OD

2 laser of wide tunability to pump ¹³CD₃OD we could observe 10 new far infrared laser lines ranging from 109 μm to 472 μm. The lines were generated by pumping infrared absorbing transitions of large offset appertaining to the C-O stretching Q-branch. All lines were characterised in wavelength, polarisation, optimum pressure of operation and precise offset measurements. Received: 17 September 1996/Revised version: 18 November 1996     

Magnetic properties of oxygenated carbon nitride films from RF-discharge in an acetylene, nitrogen, and oxygen mixture environments

Properties of oxygenated carbon nitride films have attracted the attention of physics researchers due to their magnetic and physical properties, as well as for their usefulness in the industry. The free radicals were investigated using electron paramagnetic resonance applied in the study of spin concentration due to the different mechanism of preparation of carbon nitride films by RF-discharge with different kinds of plasma. Unpaired spin concentrations, in the order of 10²⁰ per cm³, were measured and their time recombination dependency was important in those films. The films were grown by plasma enhanced chemical vapor deposition using mixtures of hydrocarbons, N₂ and O₂ in different proportions.     

Monte Carlo study of interfacial silicon suboxide layers and oxidation kinetics

A simple simulation scheme that simultaneously describes the growth kinetics of SiO₂ films at the nanometer scale and the SiO_x/Si interface dynamics (its extent, and spatial/temporal evolution) is presented. The simulation successfully applies to experimental data in the region above and below 10 nm, reproduces the Deal and Grove linear-parabolic law and the oxide growth rate enhancement in the very thin film regime (the so-called anomalous region). According to the simulation, the oxidation is governed mainly by two processes: (a) the formation of a transition suboxide layer and (b) its subsequent drift towards the silicon bulk. We found that it is the superposition of these two processes that produces the crossover from the anomalous oxidation region behavior to the linear-parabolic law.     

Interface-related effects on confined excitons in GaAs/AlxGa1−xAs single quantum wells

Confined excitons in non-abrupt GaAs/Al_xGa_1−xAs single quantum wells are studied. The graded interfaces are described taking into account fluctuations in their thickness a and positioning with respect to the abrupt interface picture. Numerical results for confined (0,0),(1,1) and (0,2) excitons in GaAs/Al_0.3Ga_0.7As quantum wells show that while the interfacial fluctuations produce small changes (<0.5 meV) in the exciton binding energies, the confined exciton energies can be red- or blue-shifted as much as 25 meV for wells with mean width of 50 Å and 2 ML wide interfaces.     

Exciton energy broadening due to interface fluctuations in ZnSe/ZnSxSe1−x strained quantum wells

The excitonic properties of a ZnSe/ZnS_xSe_1−x strained quantum well (QW) are calculated taking into account interface effects. Numerical results obtained with ZnS_0.18Se_0.82/ZnSe QWs show that graded interfaces can be responsible for a strong broadening of excitonic spectra.     

226Ra in milk of the dairy cattle from the rural region of Pernambuco, Brazil

Summary Studies performed by the Brazilian Nuclear Corporation (NUCLEBRAS), in collaboration with the Geological Survey Company of Brazil (CPRM), identified high levels of natural uranium in the districts of Pedra and Venturosa, in the rural region of the state of Pernambuco (PE) - Brazil, where the maximum value found in rocks was 22,000 mg.     

Evidences of phase separation in moisture‐cured poly(urethane urea)s by means of temperature modulated differential scanning calorimetry

The degree of phase separation in several moisture‐cured poly(urethane urea)s (PUUs) was studied by FTIR spectroscopy, wide angle X‐ray diffraction (WAXD), and temperature‐modulated differential scanning calorimetry (TMDSC). This latter technique was shown to be particularly useful in analysing the degree of phase separation in PUU polymers. Both phase mixing and phase segregation coexisted in the PUUs and the degree of phase separation increased as the urea hard segment (HS) content in the PUU increased. The maximum solubility of urea HSs into the polyol soft segments (SSs) was achieved for 50 wt % urea HS content in diol‐based PUUs, whereas for triol‐based PUUs the highest solubility between HS and SS was reached for lower urea HS amount. Finally, the higher the urea HS content the higher the extent of phase separation in the PUU. © 2007 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 45: 3034–3045, 2007