Application of 28Mg to the kinetic study of Mg uptake by rice plants

The time course of Mg uptake and release using intact rice plants and ²⁸Mg as a tracer is presented. Since there is no conventional Mg tracer available, ²⁸Mg was produced via ²⁷Al(α, 3p)²⁸Mg reaction using a cyclotron. Using the purified ²⁸Mg tracer, it was found that the uptake amount of ²⁸Mg by the rice plants increased linearly during 30 min of application. After ²⁸Mg treatment for 90 min, the roots were sequentially washed with iced solution for 120 min. Within about 10 min, almost all of the ²⁸Mg, that was thought to be weakly bound to the apoplast, was washed away.     

A frequency response model in multiquantum well lasers with unequilibrium carrier transport

A carrier transport model to explain the high-frequency response in high-speed MQW lasers is described. The ambipolar approximation, which is unsuitable for dealing with the high-speed carrier dynamics in MQW structures, was not adopted for small-signal analysis. The carrier transport effect can be characterized by four time constants: the electron transport time, _bmn; the hole transport time, _bmp; the electron escape time, _wbn; and the hole escape time, _wbp. The frequency response was interpreted as the sum of the constant response term due to the fast electron current and the roll-off term due to the slow hole transport time. The ratio of the electron contribution to the total response was proportional to the ratio of electron contribution to the total differential gain, , and reciprocally proportional to _n0 = 1 + _bmn/_wbn. The value of was calculated to be about 0.5 for typical MQW lasers. The roll-off frequency is mainly determined by . The ratio _p0 = 1 + _bmp/_wbp affects the resonant frequency and the damping rate in the high-bias condition.     

Study of Ag/Si(111) submonolayer interface: I. Electronic structure by angle-resolved UPS

Angle-resolved ultraviolet photoelectron spectra have been measured for well defined Ag/Si(111) submonolayer interfaces of (1) $\text{Si(111)(}\text{3}\text{×}\text{3}\text{)R30°-Ag}$, (2) “Si(111)(6 × 1)-Ag”, and (3) Ag/Si(111) as deposited at room temperature. Non-dispersive and very narrow (FWHM ～ 0.4–0.5 eV) Ag 4d derived peaks are found at 5.6 and 6.5 eV below the Fermi level for surface (1) and at 5.3 and 6.0 eV for surface (2). Dispersions of sp “binding” states in the energy range between E_F and Ag 4d states have been precisely determined for surface (1). Electronic structures similar to those of the Ag(111) surface, including the surface state near E_F, have been observed for surface (3).     

Achievement of a 920-MHz high resolution NMR

We have developed a 920-MHz NMR system and performed the proton NMR measurement of H(2)O and ethylbenzene using the superconducting magnet operating at 21.6 T (920 MHz for proton), which is the highest field produced by a superconducting NMR magnet in the persistent mode. From the NMR measurements, it is verified that both homogeneity and stability of the magnet have a specification sufficient for a high resolution NMR.     

Resonance Raman effect in thiourea

Raman spectra of thiourea have been observed in H₂O and D₂O solutions with the exciting laser beams of 514.5, 488.0, 457.9, 363.8, 325.0, and 257.3 nm. The resonance Raman excitation profile of the 729-cm^?1 line has been examined in the region of the 237-nm absorption band ($\text{π}{}_{\mathrm{<mtext>CS</mtext>}}{}^1\text{← π}{}_{\mathrm{<mtext>CS</mtext>}}$) by use of a solvent shift of the absorption band instead of by changing the wavelength of the exciting beam. The depolarization degree of this line was measured and its overtone Raman line was also observed. On the basis of the results of these experiments, it has been concluded that the 729-cm^?1 Raman line, assignable to the CS stretching vibration, derives its intensity solely from the 237-nm band when it is excited at 257.3 or 325.0 nm. On exciting in the region 363.8–514.5 nm, however, contributions of the higher-frequency bands are predominant rather than the contribution from the 237-nm band. The Raman line at 1520 cm^?1 of thiourea-d₄ is assignable to the NCN antisymmetric stretching vibration. From its excitation profile, its intensity has been considered to come from a vibronic coupling between the excited electronic states of the 220-nm ($\text{π}{}_{\mathrm{<mtext>CS</mtext>}}{}^1\text{← π}{}_{\mathrm{<mtext>N</mtext>}}\text{? π}{}_{\mathrm{<mtext>N</mtext>}}$) and the 197-nm ($\text{π}{}_{\mathrm{<mtext>CS</mtext>}}{}^1\text{← π}{}_{\mathrm{<mtext>N</mtext>}}\text{+ π}{}_{\mathrm{<mtext>N</mtext>}}$) bands.