高频地波雷达下的多目标跟踪数据处理

根据高频地波雷达监测海上低速移动目标的要求及该类雷达的特点,提出了一种与高频地波雷达目标跟踪相适应的多目标跟踪数据处理方案。在该方案中对BTC(bayes tracking confirm)方法与BTT(bayes tracking termination)方法进行了改进,解决了上述两种方法在高频地波雷达实际应用中存在的问题。提出了贝叶斯准则与次数判定相结合的跟踪起始和终结方法。模拟结果表明,该方案能够稳定、有效地实现高频地波雷达密集回波下的多目标跟踪。     

基于园区网络的主动安全模型设计与研究

从现行典型园区网络安全设计方案入手，结合其在安全防范解决方案上存在的问题，提出了一种网络主动安全模型；在全局网络安全认识的基础上．阐述了模型组成部件的功能定义和网络主动安全实现流程；采用统一网络入口认证、网络知识发现及资源有效控制、沟通等手段，解决了现行网络安全设计中存在的恶意攻击行为源头定位困难，以及信息安全司法取证不准、网络资源安全被动防护、网络灾难快速反映能力差等问题．实验结果表明，该设计方案具有较好的可行性和实用性．     

概率语言多属性群决策方法及其在新型智慧城市市民获得感评价中的应用

针对公众参与的语言信息多属性群决策问题,研究了考虑参与者满意度的概率语言多属性群决策方法。首先,根据参与者的语言评价信息确定并规范化概率语言决策矩阵。然后,对大群体进行共识分析,由最大化参与者群体的满意度构建线性规划模型,确定参与者群组的权重;构造正、负理想方案的评价向量,构建多目标规划模型,用拉格朗日乘子法求解属性权重;定义各方案的加权贴近度,并以此对方案进行排序和优选。最后,通过新型智慧城市市民获得感评价案例验证了模型的可行性和有效性。     

Performance of La2O3/InAlN/GaN metal—oxide—semiconductor high electron mobility transistors

We report on the performance of La2O3/InAlN/GaN metal-oxide-semiconductor high electron mobility transistors(MOSHEMTs) and InAlN/GaN high electron mobility transistors(HEMTs).The MOSHEMT presents a maximum drain current of 961 mA/mm at Vgs = 4 V and a maximum transconductance of 130 mS/mm compared with 710 mA/mm at Vgs = 1 V and 131 mS/mm for the HEMT device,while the gate leakage current in the reverse direction could be reduced by four orders of magnitude.Compared with the HEMT device of a similar geometry,MOSHEMT presents a large gate voltage swing and negligible current collapse.     

Investigation on the scattering effect of ceramic Nd:YAG

This paper investigates the scattering effect of domestic 0.5 at{\%} ceramic Nd:YAG. An effective method has been utilized to measure the scattering and absorption coefficients. An end-pumped continuous wave (CW) Nd:YAG ceramic laser was also demonstrated. A maximum output power of 6.7~W at 1064~nm was obtained at an 808-nm pump power of 32.9~W. Conversion efficiency and slope efficiency have been achieved. This indicates that scattering has an important effect on the optical performance of ceramic Nd:YAG.     

A new analytical edge spread function fitting model for modulation transfer function measurement

We propose a new analytical edge spread function (ESF) fitting model to measure the modulation transfer function (MTF).The ESF data obtained from a slanted-edge image are fitted to our model through the non-linear least squares (NLLSQ) method.The differentiation of the ESF yields the line spread function (LSF),the Fourier transform of which gives the profile of two-dimensional MTF.Compared with the previous methods,the MTF estimate determined by our method conforms more closely to the reference.A practical application of our MTF measurement in degraded image restoration also validates the accuracy of our model.     

单偏振控制器环形腔光纤激光器实验研究

理论分析了非线性偏振旋转环形腔作为类饱和可吸收体获得脉冲的物理机理。在光纤环形腔结构中,采用单个偏振控制器实现了非线性偏振旋转锁模,直接获得了脉冲宽度为131 fs的超短脉冲输出。实验中,采用性能稳定的976 nm半导体二极管激光器作为抽运源,使用高掺杂浓度的Er3 光纤为增益介质,通过调节偏振控制器,获得了光谱谱宽(3 dB带宽处)为23.5 nm的稳定锁模脉冲输出。脉冲中心波长为1535.9 nm,平均功率为5.91 mW,脉冲重复率为11.20 MHz。     

Spin gapless semiconductor like Ti2MnAl film as a new candidate for spintronics application

A novel Heusler ferrimagnet Ti₂MnAl film has been grown on Si(001) substrate using magnetron sputtering. Characteristics of its magnetic and transport properties reveal the spin‐gapless‐semiconductor (SGS) nature of the stoichiometric Ti₂MnAl, in agreement with theoretical prediction. The as‐grown SGS‐like Ti₂MnAl film demonstrated high Curie temperature, nearly compensated ferrimagnetic properties with small coercivity and low magnetization. It also showed semiconductor‐like behavior at room temperature allowing good compatibility with commercial Si‐based semiconductor. In this regards, Ti₂MnAl film is a potential candidate material for spintronics application, especially for the minimization of energy consumption of device. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

N-乙基吡咯S1态超快动力学：飞秒时间分辨光电子成像研究

N-乙基吡咯是吡咯分子的一个乙基取代衍生物,它的激发态衰变动力学目前为止很少被研究. 本文利用飞秒时间分辨光电子成像的实验方法研究N-乙基吡咯分子S₁态的衰变动力学. 实验采用241.9和237.7 nm的泵浦激发波长. 在241.9 nm激发下,得到5.0±0.7 ps,66.4±15.6 ps和1.3±0.1 ns三个寿命常数. 在237.7 nm激发下,得到2.1±0.1 ps和13.1±1.2 ps两个寿命常数. 所有寿命常数都归属为S₁态的振动态. 本文并对不同S₁振动态的弛豫机理进行了讨论.     

Benzothiadiazole-based Conjugated Polymers for Organic Solar Cells

Benzothiadiazole(BT) is an electron-deficient unit with fused aromatic core, which can be used to construct conjugated polymers for application in organic solar cells(OSCs). In the past twenty years, huge numbers of conjugated polymers based on BT unit have been developed,focusing on the backbone engineering(such as by using different copolymerized building blocks), side chain engineering(such as by using linear or branch side units), using heteroatoms(such as F, O and S atoms, and CN group), etc. These modifications enable BT-polymers to exhibit distinct absorption spectra(with onset varied from 600 nm to 1000 nm), different frontier energy levels and crystallinities. As a consequence, BT-polymers have gained much attention in recent years, and can be simultaneously used as electron donor and electron acceptor in OSCs, providing the power conversion efficiencies(PCEs) over 18% and 14% in non-fullerene and all-polymer OSCs. In this article, we provide an overview of BTpolymers for OSCs, from donor to acceptor, via selecting some typical BT-polymers in different periods. We hope that the summary in this article can invoke the interest to study the BT-polymers toward high performance OSCs, especially with thick active layers that can be potentially used in large-area devices.