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971.
Amorphous silver, copper, gold, and iron films of a thickness between 6 and 350 nm are grown on polymeric substrates by vacuum evaporation. The nanostructure of the films is investigated. The dependence of the conductivity on the film thickness is obtained, and a correlation between the surface morphology and the conductivity is established.  相似文献   
972.
The integral characteristics of magnetization switching in amorphous gadolinium-cobalt films with perpendicular anisotropy are studied by visualizing the domain structure and measuring magnetooptic hysteresis loops. The films have a radial gradient of magnetic properties that is due to a spatially nonuniform thermal field. Magnetization switching in those film areas where the domain wall motion depends only on the coercive force is simulated in simple terms. In a first approximation, local events of magnetization switching are shown to take place independently of each other and the net hysteresis loop can be represented as a sum of the local loops.  相似文献   
973.
Technical Physics - Analytical models for the magnetization vector field B m in a uniaxial ferromagnetic film are studied. Some of them are found to closely approximate B m even if the quality...  相似文献   
974.
The motion of the front of crystallization and the growth of a film at the surface of a plate are analyzed in the case of a laminar and in the case of a turbulent flow mode. Conditions are determined under which there occurs a transition from a matt inhomogeneous structure to a transparent homogeneous structure of ice. It is shown that, for a film to be steadily preserved at the plate surface, the film thickness must be larger than a critical equilibrium-thickness value h b.c, in which case a transparent homogeneous structure of ice is formed. Otherwise, the film at the plate surface is unstable and disappears in the course of time. The icing of aircrafts is the most important application of the results obtained in this study.  相似文献   
975.
Technical Physics - An analytical expression for the generatrix of the shape of a nonlinearly vibrating charged drop of a perfect incompressible conducting fluid immersed in an ideal incompressible...  相似文献   
976.
The special features of the structure and phase composition of nanocrystalline zirconia-based powders subjected to shock-wave treatment are studied. The investigations show that zirconia with small amounts of yttria and/or alumina is in nanocrystalline and quasi-amorphous states representing a nonequilibrium solid solution of ZrO2 (Y, Al) and that an increase in the monoclinic phase abundance is associated with a reduction in the critical size of tetragonal crystallites due to an accumulation of lattice microdistortions. The monoclinic phase in powders with yttria and alumina additions is not formed even with shock compression at pressures up to 20 GPa. This is attributed to the fact that the resultant lattice microdistortion level is inadequate to destabilize the nanocrystalline tetragonal phase. Relaxation of microdistortions on annealing causes the critical size of tetragonal crystallites to increase. As this takes place, the monoclinic phase is converted into the tetragonal one.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 61–70, September, 2004.  相似文献   
977.
The mass spectrum of a coupled state is analytically determined. The mechanism of production of a constituent mass of particles forming a coupled state is explained. The change of the coupled state and constituent particle component masses attendant to changes of the coupling constant is analyzed. The mass spectrum of a two-gluon glueball is determined with allowance for spin-orbital and spin-spin interactions.__________Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 33–41, December, 2004.  相似文献   
978.
A possibility of application of semiconductor lasers of the visible range as exciting sources for Raman spectroscopy is studied. An experimental set-up for measuring Raman spectra of polycrystalline dielectrics and broad-gap semiconductors excited by a semiconductor laser with a wavelength of 640 nm was created. The conditions under which the spectral width of the lasing line of a semiconductor laser was within 10-3 cm-1 in the continuous mode with a power of 10 mW are realized. The characteristics of various types of exciting sources used in Raman spectroscopy are compared. The results of studies of the characteristic Raman spectra excited with a semiconductor laser in polycrystalline sulfur are presented.  相似文献   
979.
980.
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