一个通用的记忆器件模拟器

本文根据惠普忆阻器模型提出了一个新的接地忆阻器模拟等效电路.并以此为基础,采用常规的电子元件构建了一个通用的记忆器件模拟器.该模拟器能在电路拓扑结构不变的情况下,通过改变接入元件的性质能将接地忆阻器分别转化为浮地忆阻器、浮地忆感器和浮地忆容器.由于该模拟器是浮地的,因而可以方便的与其他电子器件实现灵活的连接形式.Pspice仿真实验验证了模拟器的真确性和有效性.     

Ultra‐thin (002)‐oriented Al‐doped zinc oxide transparent electrode grown on oxygen‐controlled homo‐seed layer

Highly (002)‐oriented Al‐doped zinc oxide (AZO) thin films with the thickness of less than 200 nm have been deposited on an oxygen‐controlled homo‐seed layer at 200 °C by DC magnetron sputtering. With the homo‐seed layer being employed, the full‐width at half maximum (FWHM) of the (002) diffraction peak for the AZO ultra‐thin films decreased from 0.33° to 0.22°, and, the corresponding average grain size increased from 26.8 nm to 43.0 nm. The XRD rocking curves revealed that the AZO ultra‐thin film grown on the seed layer deposited in atmosphere of O₂/Ar of 0.09 exhibited the most excellent structural order. The AZO ultra‐thin film with homo‐seed layer reached a resistivity of 4.2 × 10^–4 Ω cm, carrier concentration of 5.2 × 10²⁰ cm^–3 and mobility of 28.8 cm² V^–1 s^–1. The average transmittance of the AZO ultra‐thin film with homo‐seed layer reached 85.4% in the range of 380–780 nm including the substrate. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

不同退火方式对Ni/SiC接触界面性质的影响

采用快速热退火(rapid thermal annealing, RTA)法和脉冲激光辐照退火(laser spark annealing, LSA)法, 在n型4H-SiC的Si面制备出Ni电极欧姆接触. 经传输线法测得RTA样品与LSA样品的比接触电阻分别为5.2×10^-4 Ω·cm², 1.8× 10^-4 Ω·cm². 使用扫描电子显微镜、原子力显微镜、透射电子显微镜、拉曼光谱等表征手段, 比较了两种退火方式对电极表面形貌、电极/衬底截面形貌和元素成分分布、SiC衬底近表层碳团簇微结构的影响. 结果表明, 相比于RTA, LSA法制备出的欧姆接触在电极表面形貌、界面形貌、电极层组分均匀性等方面都具有明显优势, 有望使LSA成为一种非常有潜力的制备欧姆接触的退火处理方法.     

正则半群上的广义逆半群同余

利用同余的核与超迹描述正则半群上的广义逆半群同余。     

宽波段连续调谐全固态CW PPMgLN光学参量振荡器

利用半导体激光泵浦输出1064 nm波长的全固态连续Nd:YVO4激光器作为泵浦源,采用周期调谐和温度调谐组合调谐技术,对基于掺氧化镁周期性极化铌酸锂晶体（MgO:LiNbO3, PPMgLN）准相位匹配（QPM）的全固态连续波（CW）光学参量振荡器（OPO）宽波段无分立连续调谐输出特性进行研究。实验采用连续工作模式和外腔结构,基于多周期PPMgLN晶体的30.2,30.4和30.6 m周期,在改变晶体的极化周期的基础上,同时在30～100 ℃范围内调节晶体工作温度。实验结果表明：CW PPMgLN OPO的泵浦阈值仅为0.22 W;不同极化周期需要的温度调谐范围不同;信号光在1 559.8～1 597.2 nm近红外波段和闲频光在3 187.3~3 347.3 nm中红外波段连续调谐输出。实现了外腔式全固态CW OPO在信号光和闲频光波段的无分立连续调谐输出。     

高气压大电流放电条件下的电极烧蚀

归纳了影响开关电极烧蚀量的因素,包括开关电极材料、放电条件等,分析了开关电极烧蚀特征与烧蚀后表面形貌,总结了开关电极烧蚀的主要机制电极加热和电极材料去除机制。为了延长开关工作寿命,提出了减少开关电极烧蚀的措施,包括选用抗烧蚀性能优异的材料作为开关电极材料、采用合适的开关电极结构和优化的放电条件等。     

基于时延和相位估计的合成孔径声呐运动补偿研究

合成孔径声呐成象的难点之一在于孔径上载体的运动不稳定性影响了合成孔径上水听器接收的信号的相干性,其结果将导致图像的畸变和分辨率的降低。首先讨论了运动误差对合成孔径声呐(SAS)成像的影响及运动补偿的必要性。在分析位移相位中心运动补偿法的基础上,提出了一种改进算法。该方法首先估计时延,然后再对剩余误差进行相位估计,从而扩大了算法适用的运动误差范围。文中给出了利用该方法的计算机仿真结果和部分水池实验结果,从结果可以看出,该方法有效地修正了在合成孔径上由于介质和载体不稳定带来的不相干性,提高了成像的质量。     

Fabrication of planar gratings by direct ablation using an ultrashort pulse laser in a common optical path configuration

Planar gratings have wide applications and to date, many methods for the fabrication of gratings have been reported. Ultrashort pulse lasers have been used for the machining of gratings primarily because they allow direct ablation and the manufacturing of sub-wavelength structures. In this paper, we present a novel direct ablation technique for the fabrication of planar gratings which makes use of the interference of ultrashort pulses in a common optical path configuration. This technique of grating fabrication not only simplifies the optical setup, but also immunizes the system to extraneous and inherent vibrations, thus enabling the manufacturing of planar gratings of good edge acuity. We have successfully fabricated planar gratings on a copper substrate. Received: 6 November 2001 / Accepted: 4 March 2002 / Published online: 10 September 2002 RID="*" ID="*"Corresponding author. Fax: +65/77-904-674, E-mail: mvenkata@ntu.edu.sg     

Suppression of superconductivity in layered Bi<Subscript>4</Subscript>O<Subscript>4</Subscript>S<Subscript>3</Subscript> by Ag doping

We report X-ray diffraction, magnetization and transport measurements for polycrystalline samples of the new layered superconductor Bi_4?x Ag _x O₄S₃(0 ≤ x ≤ 0.2). The superconducting transition temperature (T _C) decreases gradually and finally suppressed when x < 0.10. Accordingly, the resistivity changes from a metallic behavior for x < 0.1 to a semiconductor-like behavior for x > 0.1. The analysis of Seebeck coefficient shows there are two types of electron-like carriers dominate at different temperature regions, indicative of a multiband effect responsible for the transport properties. The suppression of superconductivity and the increased resistivity can be attributed to a shift of the Fermi level to the lower-energy side upon doping, which reduces the density of states at E _F. Further, our result indicates the superconductivity in Bi₄O₄S₃ is intrinsic and the dopant Ag prefers to enter the BiS₂ layers, which may essentially modify the electronic structure.