High-resolution GaP Terahertz Spectrometer and Its Application to Detect Defects in Gamma-irradiated Glucose Crystal

We developed high-resolution GaP THz signal generator using Cr:Forsterite lasers with gratings as both a pump and a signal beam for difference-frequency generation. A line width of less than 500 MHz and a wide tunable frequency range (0.6–6.2 THz) provide sufficient resolution for measuring materials with sharp absorption bands using the generator as the light source for a THz spectrometer. This is suitable for materials such as gases or solid samples at low temperatures. We demonstrated the detection of defects in organic materials, as they appear as slight deviations in the absorption frequency in the THz region.     

Spectroscopic and photoluminescence studies on optically transparent magnetic nanocomposites based on sol–gel glass: Fe3O4

Sol–gel glasses with Fe₃O₄ nanoparticles having particle sizes laying in the range 10–20 nm were encapsulated in the porous network of silica resulting in nanocomposites having both optical and magnetic properties. Spectroscopic and photoluminescence studies indicated that Fe₃O₄ nanocrystals are embedded in the silica matrix with no strong Si–O–Fe bonding. The composites exhibited a blue luminescence. The optical absorption edge of the composites red shifted with increasing concentration of Fe₃O₄ in the silica matrix. There is no obvious shift in the position of the luminescence peak with the concentration of Fe₃O₄ except that the intensity of the peak is decreased. The unique combinations of magnetic and optical properties are appealing for magneto–optical applications.     

Pulsed laser deposition of ZnO grown on glass substrates for realizing high-performance thin-film transistors

We report characterization of ZnO thin-film transistors (TFTs) on glass substrates fabricated by pulsed laser deposition (PLD). ZnO films were characterized by X-ray diffraction (XRD), atomic force microscopy and Hall effect measurements. The XRD results showed high c-axis-oriented ZnO(0002) diffraction corresponding to the wurtzite phase. Moreover, the crystallization and the electrical properties of ZnO thin films grown at room temperature are controllable by PLD growth conditions such as oxygen gas pressure. The ZnO films are very smooth, with a root-mean-square roughness of 1 nm. From the Hall effect measurements, we have succeeded in fabricating ZnO films on glass substrates with an electron mobility of 21.7 cm²/V s. By using the ZnO thin film grown by two-step PLD and a HfO₂ high-k gate insulator, a transconductance of 24.1 mS/mm, a drain current on/off ratio of 4.4×10⁶ and a subthreshold gate swing of 0.26 V/decade were obtained for the ZnO TFT.     

Highly efficient cryogenically-cooled Yb:YAG laser

A MOPA laser system for high pulse energy and high average power has been developed by using a cryogenic Yb:YAG. In the regenerative amplifier with our original TRAM architecture, the high pulse energies of 6.5 and 1.5 mJ were obtained at the repetition rate of 200 Hz and 1 kHz, respectively. An optical efficiency was as high as η_o-o = 9.3% with an excellent beam quality of M ² < 1.1, which ensured that a cryogenic Yb:YAG TRAM had a high thermal strength. The following four pass power amplifier with a cryogenic Yb:YAG rod showed 140 mJ at 100 Hz. Both a high optical efficiency of η_o-o = 30% and a high slope efficiency of η_s = 44% showed that an efficient laser operation could be realized for a power amplification with both a high pulse energy and a high average power by using a cryogenic Yb:YAG.     

Jet ejection from droplets near the Leidenfrost temperature

Abstract  

Droplets impinging on a hot surface that is near the Leidenfrost temperature were experimentally investigated. Ejection of jets from the top of the droplet was observed during the transient interaction between the droplet and a hot wall. We term this phenomenon jet ejection from droplets. When the bottom of the droplet initially impacts the hot surface, a jet is to be ejected from the top of the droplet. The jet ejection occurred only at low impact velocities and around the wetting limit temperature. It was not observed when droplets were dropped from large heights or when the surface was at a high temperature.     

Investigation of the relationship between the ionic conductivity and the local structures of singly and doubly doped ceria compounds using EXAFS measurement

The oxide ionic conductivity measurements of singly and doubly doped ceria compounds were carried out. Singly and doubly doped ceria used in this study were Ce_0.8Ln_0.2O_1.9 (Ln=Y, Sm, Nd, or La) and Ce_0.8La_0.1Y_0.1O_1.9, respectively. Lattice constants of these compounds were in proportion to the ionic radius of the dopant(s). The doubly doped ceria compound showed oxide ionic conductivity comparative to the average of that of each corresponding singly doped sample. This finding indicates that the conductivity is influenced by both dopants in the doubly doped compounds. The extended X-ray absorption fine structure (EXAFS) study showed that the coordination number of oxide ions at the nearest neighbor of cation was related to the ionic conductivity. It was found that the conductivity gave the highest value when oxygen vacancies were randomly distributed in the lattice. This indicates that the local structure seriously affects oxide ionic conduction in singly and doubly doped ceria compounds.     

Nuclear Moment Studies with Polarized Radioactive Nuclear Beams

Magnetic dipole and electric quadrupole moments of nuclei in the light-mass neutron-rich region have been studied by taking advantage of spin-polarized radioactive nuclear beams that have been obtained from the projectile fragmentation reaction. Analyses of the results reveal a few interesting phenomena characteristic of nuclear structures in this region. In particular, we report in some detail the latest result on the magnetic moment of the ¹⁷C ground state. The distinctly small value of the g-factor obtained, |g(¹⁷C)|=0.5054±0.0025, clearly excludes a I ^π=1/2⁺ candidate for the spin-parity assignment of this marginally bound nucleus, providing a reasonable account of the non-halo nature reported in recent breakup reaction experiments. Finally, future plans at the upcoming radioactive beam facility presently under construction at RIKEN are briefly mentioned. This revised version was published online in September 2006 with corrections to the Cover Date.     

Long wavelength InAs self-assembled quantum dots embedded in GaNAs strain-compensating layers

We investigated the effect of GaNAs strain-compensating layers (SCLs) on the properties of InAs self-assembled quantum dots (QDs) grown on GaAs (0 0 1) substrates. The GaNAs material can be used as SCL thereby minimizing the net strain, and thus is advantageous for multi-stacking of InAs QDs structures and achieving long wavelength emission. The emission wavelength of InAs QDs can be tuned by changing the nitrogen (N) composition in GaNAs SCLs due to both effects of strain compensation and lowering of potential barrier height. A photoluminescence emission at 77 K was clearly observed for sample with GaN_0.024As_0.976 SCL. Further, we observed an improvement of optical properties of InAs QDs by replacing the more popular GaAs embedding layers with GaNAs SCLs, which is a result of decreasing non-radiative defects owing to minimizing the total net strain.