Unveiling residual molecular binding in triply charged hydrogen bromide

We present an experimental and theoretical study of triply charged hydrogen bromide ions formed by photoionization of the inner 3d shell of Br. The experimental results, obtained by detecting the 3d photoelectron in coincidence with the two subsequent Auger electrons, are analyzed using calculated potential energy curves of HBr3+. The competition between the short-range chemical binding potential and the Coulomb repulsion in the dissociative process is shown. Two different mechanisms are observed for double Auger decay: one, a direct process with simultaneous ejection of two Auger electrons to final HBr3+ ionic states and the other, a cascade process involving double Auger decay characterized by the autoionization of Br*+ ion subsequent to the HBr2+ fragmentation.     

Field emission characteristics of thin-metal-coated nano-sheet carbon films

Nano-sheet carbon films (NSCFs) coated with very thin (≈5-nm-thick) metal layers were fabricated on Si wafer chips by means of quartz-tube-type microwave-plasma chemical-vapour-deposition method with hydrogen-methane gas mixture and an electron beam evaporation method. Field emission (FE) current densities obtained at a macroscopic average electric field, E, of ≈10 V/μm changed from 13 mA/cm² for NSCF with no coated metal to 1.7, 0.7 and 30 mA/cm² for Ti-, Al- and Au-coated NSCFs, respectively, while the threshold E varied from 4.4 V/μm for the former one to 5.3, 5.4 and 2.0 V/μm for the corresponding latter ones, respectively. As the FE currents of Au-coated NSCFs tended to be saturated in a higher E region, compared to those of NSCFs with no coated metal, no simple Fowler-Nordheim (F-N) model is applicable. A modified F-N model considering statistic effects of the FE tip structures and a space-charge-limited-current effect is successfully applied to an explanation for the FE data observed in the low and high E regions.     

Universal generation of higher-order multiringed Laguerre-Gaussian beams by using a spatial light modulator

Laguerre-Gaussian (LG) beams of various higher-order radial modes are generated by using a reflective phase-only liquid crystal on silicon (LCOS) spatial light modulator (SLM). Because of the LCOS SLM's phase-modulation characteristic of a wide spatial bandwidth, a phase modulation scheme effectively generates higher-order LG beams of up to the fifth-order radial mode. We also perform correlation analyses between the observed and the theoretical two-dimensional mode profiles to universally obtain correlation coefficients of more than 0.946, which suggest mode generations of high quality.     

Rapid breakdown mechanisms of open air nanosecond dielectric barrier discharges

The discharge initiation mechanism of nanosecond dielectric barrier discharges in open air has been clarified with time-dependent measurement of the discharge electric field by electric-field-induced coherent Raman scattering and optical emission. Our experimental observations have revealed that, in the prebreakdown phase of a nanosecond dielectric barrier discharge, the externally applied fast-rising electric field is strongly enhanced near the cathode due to large accumulation of space charge, which then strongly enhances ionization near the cathode. Once a sufficiently large number of ionizations take place, the location of peak ionization forms a front and propagates toward the cathode with strong optical emission, which establishes the discharge. This process is essentially different from the well-known Townsend mechanism for slower discharges.     

Electrons and holes in HgTe and Hg0.82Cd0.18Te with controlled deviations from stoichiometry

The deviations from the stoichiometric composition of HgTe and Hg_0.82Cd_0.18Te crystals have been controlled by heat treatment under Hg vapor pressure. The magnetic field dependence of the Hall coefficient always shows the presence of two different sets of electrons and one set of holes. A low mobility electron is shown to belong to the conduction band. Vapor pressure dependence of hole concentration in HgTe shows that the concentration of nonstoichiometric defects decreases with increasing Hg vapor pressure, but the hole concentration is always higher than the electron concentration. In the case of Hg_0.82Cd_0.18Te, the electron concentration exceeds the hole concentration at high Hg vapor pressures. The dependence of the conduction band electron mobility in HgTe upon carrier density shows that the scattering by holes and impurities is predominant. In Hg_0.82Cd_0.18Te, however, optical phonon scattering is dominant when the deviation from stoichiometry is small and the effect of residual impurities can be neglected, and scattering by holes is dominant when the hole concentration is over $\text{10}{}^{17}\text{cm}{}^3$.     

Dynamics and post-collision interaction effects in two electron decay from the Xenon 4d hole

Two Auger electrons, one very slow, one fast, have been detected in coincidence following near threshold 4d photoionization of the Xe atom. The distribution in the energy the two electrons share has been measured for the first time revealing the presence of post-collision interaction effects that provide unique information on the decay dynamics of the 4d hole. Analysis of the distorted line shapes indicates that the dominant process is decay of Xe+(4d(-1)) to Xe3+ through cascade emission of a zero kinetic energy Auger electron followed by a fast Auger electron. The widths of the intermediate Xe2+* states are estimated to be about 60 meV.     

Global aspect of steady-states for competitive-diffusive systems with homogeneous Dirichlet conditions

This paper is concerned with the competitive-diffusive systems

$\text{u}{}_{\mathrm{t}}\text{=d}{}_{\mathrm{l}}\text{u}{}_{\mathrm{xx}}\text{+(a}{}_{\mathrm{l}}\text{?b}{}_{\mathrm{l}}\text{u?c}{}_{\mathrm{l}}\text{v)u}\text{v}{}_{\mathrm{t}}\text{=d}{}_2\text{v}{}_{\mathrm{xx}}\text{+(a}{}_2\text{?b}{}_2\text{u?c}{}_2\text{u)v}\text{(x, t) ? (0, 1) × (0, ∞)}$

, with homogeneous Dirichlet boundary conditions. From a global bifurcation view point, the dependency of steady-states on the parameters a_i, b_i, c_i and d_i (i = 1, 2) is investigated. In particular, bifurcation of coexist ence solutions amd their stabilities are our main interests.     

WIDE RANGE DETECTOR USING PARABOLIC CYLINDRICAL MIRROR FOR THz APPLICATIONS

A new, wide-band, high-speed and high-sensitivity THz detector has been developed. The prototype detector consists of a parabolic cylindrical mirror, a long wire antenna and a Schottky barrier diode. Direct detection measurements have shown a stable sensitivity of 150 ± 50 V/W for 1–2 THz without any adjustments. The long wire antenna was fixed at the focus of parabolic cylindrical mirror then it has been realized less operation steps, easy coupling to the external THz signals and a dramatic enhancement in the practicality of this system. The optically polished mirror and frosted surface one showed comparable sensitivities, thus easy polishing and less cost mirror fabrication can be applied for this system. The radiation pattern showed a maximum radiation angle of approximately 23° with its dominant main lobe, which was attributed to the wire antenna character and confirmed good agreements with classical antenna theory.     

Electron field emission characteristics of nano-catkin carbon films deposited by electron cyclotron resonance microwave plasma chemical vapour deposition

This paper reported that the nano-catkin carbon films were prepared on Si substrates by means of electron cyclotron resonance microwave plasma chemical vapour deposition in a hydrogen and methane mixture. The surface morphology and the structure of the fabricated films were characterized by using scanning electron microscopes and Raman spectroscopy, respectively. The stable field emission properties with a low threshold field of 5V/μm corresponding to a current density of about 1μA/cm^2 and a current density of 3.2mA/cm^2 at an electric field of 10V/μm were obtained from the carbon film deposited at CH4 concentration of 8%. The mechanism that the threshold field decreased with the increase of the CH4 concentration and the high emission current appeared at the high CH4 concentration was explained by using the Fowler-Nordheim theory.