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81.
A class of affine nested fractals is introduced which have different scale factors for different similitudes but still have the symmetry assumptions of nested fractals. For these fractals estimates on the transition density for the Brownian motion are obtained using the associated Dirichlet form. An upper bound for the diagonal can be found using a Nash-type inequality, then probabilistic techniques are used to obtain the off-diagonal bound. The approach differs from previous treatments as it uses only the Dirichlet form and no estimates on the resolvent. The bounds obtained are expressed in terms of an intrinsic metric on the fractal.  相似文献   
82.
Transitions related to the spin-glass phase in Mn1−xTixSb are revisited from the nonlinear ac susceptibility. Near the tricritical point (x≈0.8), the transition between ferromagnetic and reentrant spin-glass states is sharp. At x0.8, an anomally is found slightly above the temperature of usual spin-glass freezing.  相似文献   
83.
A high density mark edge recording method on a phase change rewritable disk is reported. A carrier-to-noise ratio of 55 dB for a mark length of 0.55,μm is obtained by using a 680 nm, NA 0.6 head and a phase change rewritable disk. In mark edge recording, it is necessary to record each mark in correct length. A new laser power modulation pattern is proposed. This pattern consists of a first-pulse, a multi-pulse chain and a last-pulse. Both positions of the first-ptilse and the last-pulse are movable. By adjusting these positions, a jitter, σ/Tw (Tw is window margin), is improved to 6.5% in high density EFM (Eight to Fourteen Modulation) recording of 0.4 μm/bit.  相似文献   
84.
In this paper, we give a new genus-3 topological recursion relation for Gromov-Witten invariants of compact symplectic manifolds. This formula also applies to intersection numbers on moduli spaces of spin curves. A by-product of the proof of this formula is a new relation in the tautological ring of the moduli space of 1-pointed genus-3 stable curves. Research of the first author was partially supported by NSF grant DMS-0204824 Research of the second author was partially supported by NSF grant DMS-0505835  相似文献   
85.
By the method of microwave cavity resonance the authors have measured the temporal variation of the lctron density following the laser excitation of neon glow-discharge plasma, and the result is compared with the optogalvanic signal. It is found that the optogalvanic signal does not represent the change in the electron density; i.e., the time resolution is poor and the absolute magnitude is smaller by an order.  相似文献   
86.
To suppress starlight for direct exoplanet observation, we propose a common-path achromatic rotational-shearing coronagraph (CP-ARC), which is an interferocoronagraph with an angular-adjustable field rotator. The CP-ARC aims to maintain unwanted detection of stellar light, which can be suppressed incompletely by interference because of the finite diameter of the star. Compared to the previous interferocoronagraph, which had a nonadjustable 180° field rotation, the proposed CP-ARC can improve the coronagraphic contrast by several orders if the CP-ARC is combined with medium or large telescopes where the companion-star separation is optically resolved by more than a few Airy radii. The CP-ARC is made robust against mechanical disturbances due to the common-path interferometer principle.  相似文献   
87.
88.
Cu(In,Ga)Se2 (CIGS) solar cells without buffer layers have been demonstrated. Currently, CdS, Zn(O,S,OH), ZnS, or InS buffer layers are used in high efficiency CIGS solar cells to suppress interface recombination. One of the important parameters to reduce the recombination is the conduction band offset (CBO) between the buffer and CIGS layers. In this study, we have proposed the use of a novel transparent conductive oxide (TCO) which can control the CBO to reduce interface recombination and eliminate the buffer layers. The device simulation was used to verify the effect of CBO control theoretically. Then, the novel TCO material of ZnO1?xSx:Al prepared by co-sputtering of ZnO:Al2O3 and ZnS targets was fabricated to verify the CBO effect experimentally. The efficiency of a CIGS solar cell with a ZnO:Al/CIGS/Mo/soda-lime glass structure, i.e. buffer-less structure using a conventional TCO, was significantly low because of severe shunting. In contrast, the use of ZnO1-xSx:Al instead of ZnO:Al increased the shunt resistance of the CIGS solar cell, resulting in higher open-circuit voltage and efficiency. The result is the first proof of the concept of the buffer-less CIGS solar cells.  相似文献   
89.
This study examined the acoustic phonon mode of ionic liquids consisting of 1-alkyl-3-methyl-imidazolium family (CnMIM) cations with n values ranging from 2 to 10 and bis(trifluoromethylsulfonyl)amide (TFSA) anion in the temperature range from 300 K to 100 K. [CnMIM]+[TFSA]? showed depolarized (VH) components of Brillouin peaks at temperatures below the glass transition temperature when n is larger than 4. On the other hand, in the case of ionic liquids with different anions, such as [C4MIM]+[BF4]?, [C4MIM]+[PF6]? and [C8MIM]+[BF4]?, the VH component of Brillouin peaks was not observed in the temperature range investigated. The dielectric loss spectra showed that the temperature dependence of alkyl chain domain relaxation of all ionic liquids followed the Arrhenius law and showed an increase in activation energy at the temperature where the VH component of Brillouin peak appeared. These results suggest that the observed depolarized component of Brillouin peak might originate from uniquely induced polarization in the 2nd domain composed of head groups of cations and anions.  相似文献   
90.
Shockley partial dislocations in 4H-SiC were observed using monochromatic synchrotron X-ray topography with a grazing-incidence Bragg-case geometry, that is, Berg–Barrett topography. The contrast of partial dislocations at the edges of Shockley-type stacking faults is discussed in terms of whether they have C- or Si-core edge components, or screw components. The dissociated state of basal-plane dislocation is discussed on a basis of the stacking sequence for basal-planes in the 4H-SiC crystal structure. It is expected that the results obtained in this study will be useful for characterizing Shockley-type stacking faults in Berg–Barrett topography.  相似文献   
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