One-dimensional chiral self-assembly of pyrene derivatives based on dendritic oligopeptides

Supramolecular chiral columnar liquid crystals have been formed through one-dimensional self-assembly of pyrene-containing oligopeptides. Supramolecular chirality is further tuned by cooperation of intermolecular hydrogen bonding and electron donor-acceptor interactions. [reaction: see text]     

Unified characterizations for modifications ofR 0 andR 1 topological spaces

Cammaroto and Noiri [14] introduced a separation axiom calledm-R ₀ in anm-space (X, m). In this paper, we introduce the notion ofm-R ₁ spaces and offer many characterizations ofm-R ₀ (resp.m-R ₁) spaces which enable us to obtain unified characterizations of separation axiomsR ₀, semi-R ₀, pre-R ₀,α-R ₀,δ-semiR ₀, (δ, p)-R ₀ (resp.R ₁, semi-R ₁, pre-R ₁,α-R ₁,δ-semiR ₁, (δ, p)-R ₁).     

Molecular and functional diversity of vascular endothelial growth factors

Summary Members of the vascular endothelial growth factor (VEGF) family are crucial regulators of neovascularization and are classified as cystine knot growth factors that specifically bind cellular receptor tyrosine kinases VEGFR-1, VEGFR-2, and VEGFR-3 with high but variable affinity and selectivity. The VEGF family has recently been expanded and currently comprises seven members: VEGF-A, VEGF-B, placenta growth factor (PlGF), VEGF-C, VEGF-D, viral VEGF (also known as VEGF-E), and snake venom VEGF (also known as VEGF-F). Although all members are structurally homologous, there is molecular diversity among the subtypes, and several isoforms, such as VEGF-A, VEGF-B, and PlGF, are generated by alternative exon splicing. These splicing isoforms exhibit differing properties, particularly in binding to co-receptor neuropilins and heparin. VEGF family proteins play multiple physiological roles, such as angiogenesis and lymphangiogenesis, while exogenous members (viral and snake venom VEGFs) display activities that are unique in physiology and function. This review will highlight the molecular and functional diversity of VEGF family proteins.     

Stationary solutions to the Falk system on shape memory alloys

We study the Falk model system describing martensitic phase transitions in shape memory alloys. Its physically closed stationary state is formulated as a nonlinear eigenvalue problem with a non‐local term. Then, some results on existence, stability, and bifurcation of the solution are proven. In particular, we prove the existence of dynamically stable nontrivial stationary solutions. Copyright © 2009 John Wiley & Sons, Ltd.     

Synthesis and Some Properties of Low Melting Ferroelectric Liquid Crystals of Benzylidene Anilines

A series of chiral benzylidene-aniline compounds, 4-alkoxybenzylidene 4′-(2-methylbutyloxycarbonyl)anilines, have been synthesized and their mesomorphic properties are examined. They showed a monotropic chiral smectic C phase in conjunction with enantiotropic smectic A phase, and their chiral smectic C—smectic A phase transition temperatures are around room temperatures. Their spontaneous polarization values are moderately higher than those of DOBAMBC “4-decyloxybenzylidene 4′-amino-(2-methylbutyl)cinnamate”.     

Contrast analysis of Shockley partial dislocations in 4H-SiC observed by synchrotron Berg–Barrett X-ray topography

Shockley partial dislocations in 4H-SiC were observed using monochromatic synchrotron X-ray topography with a grazing-incidence Bragg-case geometry, that is, Berg–Barrett topography. The contrast of partial dislocations at the edges of Shockley-type stacking faults is discussed in terms of whether they have C- or Si-core edge components, or screw components. The dissociated state of basal-plane dislocation is discussed on a basis of the stacking sequence for basal-planes in the 4H-SiC crystal structure. It is expected that the results obtained in this study will be useful for characterizing Shockley-type stacking faults in Berg–Barrett topography.     

Buffer-less Cu(In,Ga)Se2 solar cells by band offset control using novel transparent electrode

Cu(In,Ga)Se₂ (CIGS) solar cells without buffer layers have been demonstrated. Currently, CdS, Zn(O,S,OH), ZnS, or InS buffer layers are used in high efficiency CIGS solar cells to suppress interface recombination. One of the important parameters to reduce the recombination is the conduction band offset (CBO) between the buffer and CIGS layers. In this study, we have proposed the use of a novel transparent conductive oxide (TCO) which can control the CBO to reduce interface recombination and eliminate the buffer layers. The device simulation was used to verify the effect of CBO control theoretically. Then, the novel TCO material of ZnO_1?xS_x:Al prepared by co-sputtering of ZnO:Al₂O₃ and ZnS targets was fabricated to verify the CBO effect experimentally. The efficiency of a CIGS solar cell with a ZnO:Al/CIGS/Mo/soda-lime glass structure, i.e. buffer-less structure using a conventional TCO, was significantly low because of severe shunting. In contrast, the use of ZnO_1-xS_x:Al instead of ZnO:Al increased the shunt resistance of the CIGS solar cell, resulting in higher open-circuit voltage and efficiency. The result is the first proof of the concept of the buffer-less CIGS solar cells.     

Automatic design of illumination systems

The approach for autodesign of optical characteristics of different illumination units such as backlight systems, led arrays and light boxes is considered. Suggested software solution allows finding optimal configuration of lighting scheme for providing necessary distribution of output light. Additional preprocessing phase is introduced in design process, which provides reduction of design iterations and better convergence compared to conventional design methods, utilizing random fluctuations of design parameter between iterations. The results of several designs of different kinds of illumination systems are presented.     

twins in Mo-doped TiSi 2 thin films with the C54 structure

The defect structures in orthorhombic C54 crystallites in thin films of Mo-doped TiSi 2 produced by co-sputtering have been investigated by transmission electron microscopy. Almost all C54 crystallites contain a twin boundary parallel to (101), dividing a crystallite into two regions, each of which also contains many thin twins with the habit plane parallel to (001), which is inclined by about 45° from (101). Both of the two regions divided by the twin boundary parallel to (101) tend to have facets on (001) as well as thin twins with the habit plane parallel to (001). As a result, C54 crystallites exhibit a characteristic shape just like an oak leaf. While twins with the (001) habit plane have been observed in C54 crystallites in both binary and Mo-doped TiSi 2 thin films, those with the (101) habit plane are present only in Mo-doped TiSi 2 thin films. The twinning elements for (101) twins are determined to be K 1 = (101), , K 2 = (001) and m2 = [100]. The origin of (101) twins in Mo-doped TiSi 2 is discussed in terms of the change in the c / a axial ratio upon alloying TiSi 2 with Mo.     

Structural phase transitions at clean and metal-covered Si(111) surfaces investigated by RHEED spot analysis

Structural phase transitions between various kinds of superlattice structures formed on a Si(111) surface have been investigated by spot analysis of reflection high-energy electron diffraction (RHEED). Reversible transitions induced by temperature changes and irreversible ones induced by metal depositions were observed. Detailed discussions on the dynamics of the phase transitions are made by quantitative analyses of integrated spot intensity and profile. For a phase transition of 7′7  1′1 structures on a clean Si(111) surface, a hysteresis with temperature difference of 5°C. between in heating and cooling processes was found in the spot intensity change, indicating a first-order transition. Hysteresis was hardly recognized, on the other hand, for transitions of Au-induced superstructures (5×2-Au or ×-Au)  1×1-Au. The spot profiles were found to be broadened during the transition of Si(111)-×-Au  1×1-Au, which was a signature of a continuous transition, while the profiles remained unchanged during the transitions of the 7×7  1×1 and 5×2-Au  1×1-Au phases. Structural conversions induced by In adsorption on the Si(111) surface kept at constant temperatures were also analyzed. The conversions at room temperature were totally dependent on the initial substrate surface structures; the 7×7 surface did not show any structural conversion with In adsorption, while the ×-In surface successively converted to a 2×2 and a × phase with coverage increase. The structural transitions at elevated temperatures were sensitively dependent on the temperatures. Sequences of transitions among the 7×7, 4×1, ×, 1×, and ×4 were quantitatively revealed as changes in RHEED spot intensity.