Influence of processing variables on the formation of La2Zr2O7 in transferred arc plasma torch processing

The transferred arc plasma (TAP) torch process has various noteworthy features such as extremely high temperatures, low environmental impact and short processing time which makes it the most suitable technique for synthesizing ceramic composite materials. Furthermore, it is a direct two-step technique which by its virtue of high temperature and power density paves way for high production rate. Hence in this study, an effort has been made to utilize the TAP torch processing technique for the bulk production of La₂Zr₂O₇ with time effectiveness from the mixture of La₂O₃ and ZrO₂ powders (1:2 mol ratios) which were ball milled for 4 h. For this purpose, transferred arc plasma torch was specially designed in laboratory scale level and the operating parameters were optimized in order to achieve maximum La₂Zr₂O₇ formation efficiency. In this study, the phase and microstructure formation of the processed samples was analyzed via X-ray diffraction (XRD) and scanning electron microscope (SEM) images respectively. Moreover, EDX analysis was incorporated to highlight the superior influence of the longer processing time on the stoichiometric ratio of ZrO₂/La₂O₃ in the processed sample as against input power and the gas flow rate.     

Conductance quantization and magnetoresistance in magnetic point contacts

We theoretically study the electron transport through a magnetic point contact (PC) with special attention given to the effect of an atomic scale domain wall (DW). The spin precession of a conduction electron is forbidden in such an atomic scale DW and the sequence of quantized conductances depends on the relative orientation of magnetizations between left and right electrodes. The magnetoresistance is strongly enhanced for the narrow PC and oscillates with the conductance.     

Analysis of A-DLTS spectra of MOS structures with thin NAOS SiO2 layers

A set of MOS structures with thin SiO₂ layers prepared by nitric acid oxidation (NAOS) method was investigated using acoustic deep level transient spectroscopy (A-DLTS) to explain the role of annealing treatment (post-oxidation annealing (POA) and post-metallization annealing (PMA)) at different conditions on the distribution of interface states. The activation energies of interface states and the corresponding capture cross-section were calculated both from Arrhenius plots constructed for individual peaks of the A-DLTS spectra and applying the method of modeling of measured acoustic spectra. The energy distribution of the interface states was determined also from the dependence of acoustoelectric response signal (ARS) on the external bias voltage (U _ac - V _G curves). By comparing the A-DLTS spectra, U _ac - V _G characteristics and some electrical measurements (G-V, I-V curves) of investigated MOS structures with no treatment with those treated with POA and/or PMA, the role of individual treatments was observed. The definite decrease of the interface states in the structures with the PMA treatment in comparison with the POA treatment was confirmed too.     

Octave-spanning carrier-envelope phase stabilized visible pulse with sub-3-fs pulse duration

The visible second harmonic of the idler output from a noncollinear optical parametric amplifier was compressed using adaptive dispersion control with a deformable mirror. The amplifier was pumped by and seeded in the signal path by a common 400 nm second-harmonic pulse from a Ti:sapphire regenerative amplifier. Thus, both the idler output and the second harmonic of the idler were passively carrier-envelope phase stabilized. The shortest pulse duration achieved was below 3 fs.     

Polarity determination of wurtzite-type crystals using hard x-ray photoelectron diffraction

The surface structure of a single-crystal ZnO wafer was studied by angle-resolved x-ray photoelectron spectroscopy (ARXPS) using synchrotron radiation. As a result, well-defined x-ray photoelectron diffraction (XPD) patterns were obtained for the (0001) and (000$\overline{1}$) polar surfaces using the photoemission from the Zn 2p_3/2 and O 1s core levels. The XPD patterns were indexed assuming forward scattering of photoelectrons by neighboring ions. Further, the XPD patterns for the (0001) and (000$\overline{1}$) surfaces were different from each other, indicating the possibility for using the XPD technique for polarity determination.     

Phonon density of states and compression behavior in iron sulfide under pressure

We report the partial phonon densities of states (DOS) of iron sulfide, a possible component of the rocky planet's core, measured by the 57Fe nuclear resonant inelastic x-ray scattering and calculate the total phonon DOS under pressure. From the phonon DOS, we drive thermodynamic parameters. A comparison of the observed and estimated compressibilities makes it clear that there is a large pure electronic contribution in the observed compressibility in the metallic state. Our results present the observation of thermodynamic parameters of iron sulfide with the low-spin state of an Fe2+ ion at the high density, which is similar to the condition of the Martian core.     

Fabrication and hard X-ray photoemission analysis of photocathodes with sharp solar-blind sensitivity using AlGaN films grown on Si substrates

Photocathode devices operating in reflection-mode, where the photoemission is detected on the same side as the light irradiation, were developed for the detection of deep ultraviolet light by using p-Al_xGa_1−xN films grown on Si(1 1 1) substrates. The external quantum efficiencies were as high as 20-15% at 200 nm and 280 nm, while the value was as low as 10⁻²% at 310 nm. The on-off ratio was more than four orders of magnitude, which represents high solar-blind sensitivity. The escape probability of Al_xGa_1−xN photocathode was decreased with increase of AlN mole fraction. The effective barrier potential against the photoelectron emission near the surface was reduced due to the upward shift of conduction band of Al_xGa_1−xN. The photoemission from the Al_xGa_1−xN films terminated with Cs-O adatoms will be discussed in terms of band diagrams that were evaluated by hard X-ray photoelectron spectroscopy.     

Quasi-Nambu-Goldstone modes in Bose-Einstein condensates

We show that quasi-Nambu-Goldstone (NG) modes, which play prominent roles in high energy physics but have been elusive experimentally, can be realized with atomic Bose-Einstein condensates. The quasi-NG modes emerge when the symmetry of a ground state is larger than that of the Hamiltonian. When they appear, the conventional vacuum manifold should be enlarged. Consequently, topological defects that are stable within the conventional vacuum manifold become unstable and decay by emitting the quasi-NG modes. Contrary to conventional wisdom, however, we show that the topological defects are stabilized by quantum fluctuations that make the quasi-NG modes massive, thereby suppressing their emission.     

Laser deposition of iron on graphite substrates

Pulsed laser deposition of iron atoms on graphite substrates was performed to produce iron carbide films. Mössbauer spectra of the sample revealed that iron carbide was produced on the substrate surface and that an α-Fe layer was produced above the iron carbide layer. When the substrate temperature was maintained at 300 K, the iron carbide layer had a hyperfine magnetic distribution because it contained high density of defects. Laser deposition of Fe at 570 K produced cementite Fe₃C with fewer defects due to enhancement of thermal reactions or annealing of the films. The orientation of hyperfine field of the Fe₃C film was parallel to the substrate surface.     

Radial breathing modes of single-walled carbon nanotubes in resonance Raman spectra at high temperature and their chiral index assignment

Radial breathing modes (RBMs) in resonance Raman spectra from single-walled carbon nanotubes (SWCNTs) on a SiO₂/Si (0 0 1) substrate are studied between 25 and 720 °C. A change in the relative intensity of each RBM peak with temperature is observed, which originates from the temperature dependence of the resonance condition of nanotubes. For 25 °C, each RBM peak is reasonably assigned on the basis of data in the literature [J. Maultzsch, H. Telg, S. Reich, F. Hennrich, C. Thomsen, Phys. Rev. B 72 (2005) 205438]. By taking into account the temperature-dependent behavior of the relative intensity of the RBM peaks, each RBM peak is successfully assigned even for 720 °C. It is found that most of the observed RBM peaks for a laser excitation energy of E_exc = 1.96 eV are from chiral SWCNTs. These results make it possible to discuss further details of the chirality-dependent growth behavior observed for in situ Raman spectroscopy.