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991.
992.
993.
It was shown that the color property of the recognized visual space of illumination, RVSI was controlled by changing the initial visual information by arranging objects in the room all shifting toward orange direction. We constructed two miniature rooms, D and I, both illuminated by the same daylight type fluorescent lamps but arranged with furniture of different color, those in room I shifting toward color as if they were illuminated by an incandescent lamp. Subjects felt as if room I were illuminated by an incandescent lamp. A test patch was placed midair in each room and its color was judged. When the test patches were placed in room I their colors were all perceived to be shifted toward greenish blue compared to those of test patches placed in room D, in spite of having the same illumination. The results imply that the apparent color of an object is determined not by its chromaticity, but in relation to the color property of the RVSI of the room where the object is observed.  相似文献   
994.
PET用新型深度编码探测器设计   总被引:1,自引:0,他引:1  
平行性问题或作用深度问题影响着正电子放射层析系统(PET)的成象分辨率。本文提出和评价了一种二阶深度编码探测器,这个探测器是由两层LSO晶体和位置灵敏型光电倍增管(PS-PMT)组成,上层的晶体相对于下层的晶体的位置在XY方向上都有半个晶体阵列单元的错位,因为每个晶体的输出光的重心位置分布在PS-PMT上不同的位置,所以通过计算其重心位置就可在象平面上区别开每个晶体。根据PET系统的应用要求,我们验证了探测器的性能。伽马射线垂直入射时,上层晶体阵列的固有空间分辨率为1.15mmFWHM,下层晶体列阵为1.34mm FWHM.钠伽马辐射源的511keV能量峰处的平均能量分辨率对于下层晶体为19.7%,上层为23.6%.通过类似的技术亦可实现3阶、4阶深度编码探测器。  相似文献   
995.
Polymorphs I and II of phenylpyruvic acid are obtained as mixtures of both crystal forms or relatively pure crystals, from different solvents. Polymorph I is more stable than polymorph II at room temperature. Spectral characteristics of these polymorphs are discussed on the basis of IR, Raman and solid state 13C NMR spectra. Also, the assignment of the IR features observed in the 1600–1700 cm−1 region is re-investigated by referring to the spectra of heavy-atom substituted derivatives. It is suggested that the C=O stretching band is split by the crystal field for both polymorphs.  相似文献   
996.
Frictional properties of organosilane self-assembled monolayers (SAMs) and hydrated silicon oxide (SiOH) surfaces on a single sample substrate were studied; the frictional force difference between the surfaces was measured by employing one as a standard. Using a lateral force microscope (LFM), differential frictional force microscopic data were obtained by measuring the difference in the friction forces of the two surfaces with respect to the vertical load force applied to the LFM probe. The SAMs were prepared from n-octadecyltrimethoxysilane [ODS, H3C(CH2)17Si(OCH3)3], n-(6-aminohexyl) aminopropyltrimethoxysilane [AHAPS, H2N(CH2)6NH(CH2)3Si(OCH3)3], 3,3,3-trifluoropropyltrimethoxysilane [FAS3, F3C(CH2)2Si(OCH3)3] and heptadecafluoro-1,1,2,2-tetrahydro-decyl-1-trimethoxysilane [FAS17, F3C(CF2)7(CH2)2Si(OCH3)3] by chemical vapor deposition. In the vertical force range of 0 to 600 nN, the SAMs showed no damage at all, and frictional force on the SAM surfaces increased linearly with the vertical force. The order of the frictional force magnitudes determined with the SiOH-terminated probe was SiOH > AHAPS > FAS3 > FAS17 > ODS. In addition, the frictional force difference did not become zero even at a vertical force of 0 nN, that is, the frictional differences could even be imaged by LFM through probe-sample adhesion.  相似文献   
997.
Matrix‐assisted laser desorption/ionization time‐of‐flight mass spectrometry analysis revealed that the HCl–vinyl ether adduct/SnCl4/n‐Bu4NCl initiating system induced living cationic polymerization of isobutyl vinyl ether in CH2Cl2 at ?78 °C, that is, the well‐resolved spectra demonstrated that the produced polymers consist of only one series of polymers carrying one initiator fragment at the α end and one methoxy group originated from quenching with methanol at the ω end. The polymer molecular weight as well as the terminal structure were unchanged even when the reaction mixtures were kept unquenched at ?78 °C for an interval of more than five times longer than the reaction period after complete consumption of monomer, which indicates the long lifetime of the living end even under such starved conditions. In contrast, the polymers obtained at a higher temperature, ?15 °C, showed an additional minor series of polymers formed via proton initiation, originating from adventitious water. Under the starved conditions, other side reactions occurred to generate minor series of polymers with an aldehyde ω end or a diisobutyl acetal ω end. Rather surprisingly, however, unsaturated C?C end groups were not detected, which means the absence of β‐proton elimination under these conditions. © 2001 John Wiley & Sons, Inc. J Polym Sci A: Polym Chem 39: 1249–1257, 2001  相似文献   
998.
A theoretical and experimental investigation is made on the relation between the statistical properties of a rough surface and the averaged speckle intensity in the diffraction field. The theoretical analysis is performed in some detail over a wide range of the random phase variation for various illuminated objects. The result gives an interpretation for the behavior of the averaged speckle intensity obtained experimentally for various states of rough surfaces.  相似文献   
999.
In connection with the parameters of the optical configuration used to produce speckles and under illumination of a Gaussian beam over a moving diffuse object, this paper discusses the statistical properties of dynamic speckles produced in the diffraction and image fields by the diffuse object moving in a plane with constant velocity. Especially, the space-time correlation function of the dynamic speckle intensity is examined in detail. Two typical speckle motions of translation and boiling are interpreted for various optical configurations in the diffraction and image fields. As one of the interesting applications of dynamic speckles to metrology, various methods for velocity measurements of the diffuse object are introduced.  相似文献   
1000.
Minority carrier lifetimes in nitrogen implanted GaAs1-x P x (x=0.4; 0.65) were measured at 77K by an optical phase shift method as a function of nitrogen dose and annealing temperature in order to investigate the dependence of the lifetime on the concentration of nitrogen isoelectronic traps. A large increase in the lifetime was observed after nitrogen implantation followed by annealing at and above 800°C. The maximum lifetimes were 22ns for GaAs0.35P0.65 and 6.7 ns for GaAs0.6P0.4. They were obtained by implantation to a dose of 5×1013 cm?2 in GaAs0.35P0.65 and 1013 cm?2 in GaAs0.6P0.4. The lifetime after nitrogen implantation followed by annealing was longer by a factor of 6–7 than that of the unimplanted sample.  相似文献   
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