In situ observations of domain wall motion in Mn–Zn and Ni–Zn ferrites by Lorentz microscopy and electron holography

Domain wall motion in Mn–Zn and Ni–Zn ferrites with applied magnetic fields is investigated by in situ observations with Lorentz microscopy and electron holography. It is found that both Mn–Zn and Ni–Zn ferrites have a mean grain size of approximately 10 μm and several pores with sizes ranging from 0.2 to 1.1 μm. In situ observations by Lorentz microscopy with an applied magnetic field reveals that in Mn–Zn ferrite, the domain walls move easily across the grain boundary, while in Ni–Zn ferrite, the domain walls move along the grain boundary but are pinned at the grain boundary and pores. From in situ observations of Ni–Zn ferrite by electron holography, it is clarified that domain wall pinning at the grain boundary retards a sensitive increase in magnetic flux parallel to the applied field direction, which is considered to result in high hysteresis loss.     

Curved Ferroelectric Liquid Crystal Matrix Displays Driven by Field-Sequential-Color and Active-Matrix Techniques

This paper describes a curved field-sequential-color matrix display using fast-response ferroelectric liquid crystal. Black matrix and transparent electrode patterns were formed on a thin plastic substrate by a transfer method from a glass substrate. While a composite film of liquid crystal and micro-polymers of walls and fibers was formed between the flexible substrates by printing, laminating and curing processes of a solution of monomers and liquid crystal, the mechanical stability was enhanced by use of multi-functional monomers to form large display panels. The image pixels of the matrix panel were driven by an active matrix scheme using an external switch transistor array at a frequency of 180 Hz for intermittent three-primary-color backlight illumination. The flexible A4-paper-sized color display with 24 × 16 pixels and 60 Hz field frequency was demonstrated by illuminating it with sequential three-primary-color lights from light-emitting diodes of the backlight. Our display system is useful in various information displays because of its freedom of setting and location.     

Absolute values and real parts for functions in the smirnov class

Let N₊ denote the Smirnov class on the open unit disc D. It is easy to see that for any outer function g in N₊, there exists a function G in N₊ such that |g|; ≤ ReG on δ. We describe such a G. In general, G may not be outer. In this paper, a necessary and sufficient condition on g is given for the existence of an outer function G such that |;g|; < ReG. When g belongs to the Hardy space H¹, G is trivially given as the Herglotz integral of |;g|;.     

Achievement of laser fusion of biological cells using UV pulsed dye laser beams

This paper reports a successful achievement of laser-induced biological cell fusion using an excimer laser excited dye laser. To our knowledge, we examined for the first time the dependence of fusion rate on laser pulse energy, number of laser pulses, and laser wavelength. Maximum fusion rate of approximately 50% was obtained by this laser fusion technology.     

Pressure effect on cation exchange distribution of some fission products on a strongly acidic cation exchanger of sulfonic acid type in nitric acid

Distribution coefficients of fission products on a cation exchanger in 1M nitirc acid were measured as a function of the pressure by means of the column method. The distribution coefficients were found to decrease with the pressure, and this became more pronounced with increasing charge of the ions. The distribution coefficients of yttrium and RuNO³⁺ decreased with the pressure to a relatively greter extent than lighter lanthanides, and RuNO³⁺ appeared at a separate peak from europium in the elution chromatogram as the pressure was increased up to 900 kg/cm².     

Organometallic chemistry related to applications for microelectronics in Japan

This is meant to be a brief overview of the developments of research activities in Japan on organometallic compounds related to their use in electronic and optoelectronic devices. The importance of organometallic compounds in the deposition of metal and semiconductor films for the fabrication of many electronic and opto-electronic devices cannot be exaggerated. Their scope has now extended to thin-film electronic ceramics and high-temperature oxide superconductors. A variety of organometallic compounds have been used as source materials in many types of processing procedures, such as metal–organic chemical vapor deposition (MOCVD), metalorganic vapor-phase epitaxy (MOVPE), metal–organic molecular-beam epitaxy (MOMBE), etc. Deposited materials include silicon, Group III–V and II–VI compound semiconductors, metals, superconducting oxides and other inorganic materials. Organometallic compounds are utilized as such in many electronic and optoelectronic devices; examples are conducting and semiconducting materials, photovoltaic, photochromic, electrochromic and nonlinear optical materials. This review consists of two parts: (I) research related to the fabrication of semiconductor, metal and inorganic materials; and (II) research related to the direct use of organometallic materials and basic fundamental research.     

Hamiltonian graph representation of zeolite frameworks and Si,Al ordering in the framework

In the first part, a topological characterization of various zeolite frameworks is performed on the basis of the Hamiltonian graph. It affords a simple representation of the framework connectivity, and presents some possibility of the classification as well as the prediction of unknown frameworks. In the second part, a simple and direct method based on the connectivity matrix is presented, by which all the possible Al distributions in a given framework are derived exhaustively under the restriction of Loewenstein's rule. An example of Al preference site determination is applied for zeolite ZSM-5 and compared with the result by the SCF-MO method.     

Finite dimensional semisimple Q-algebras

A Q-algebra can be represented as an operator algebra on an infinite dimensional Hilbert space. However we don’t know whether a finite n-dimensional Q-algebra can be represented on a Hilbert space of dimension n except n = 1, 2. It is known that a two dimensional Q-algebra is just a two dimensional commutative operator algebra on a two dimensional Hilbert space. In this paper we study a finite n-dimensional semisimple Q-algebra on a finite n-dimensional Hilbert space. In particular we describe a three dimensional Q-algebra of the disc algebra on a three dimensional Hilbert space. Our studies are related to the Pick interpolation problem for a uniform algebra.     

Effect of Ru crystal orientation on the adhesion characteristics of Cu for ultra-large scale integration interconnects

The adhesion of Cu on Ru substrates with different crystal orientations was evaluated. The crystal orientation of sputter deposited Ru could be changed from (1 0 0) to (0 0 1) by annealing at 650 °C for 20 min. The adhesion of Cu was evaluated by the degree of Cu agglomeration on Ru. Cu films on annealed Ru films with the (0 0 1) crystal orientation showed 28% lower RMS values and 50% lower Ru surface coverage than Cu as-deposited on Ru having the (1 0 0) crystal orientation after annealing at 550 °C for 30 min, which suggest that Cu wettability on the Ru(0 0 1) was better than that on the Ru(1 0 0) plane. The low lattice misfit of 4% between Cu(1 1 1) and Ru(0 0 1) may be the reason for this good adhesion property.