Synthesis and properties of furo[4,3,2-de][1]benzopyran

A new heterocycle, furo[4,3,2-de][1]benzopyran ( 2 ), was synthesized. A key step in the sequence was the allylic bromination of 3,4-dihydrofuro[4,3,2-de][1]benzopyran ( 8 ) to give 3-bromo-3,4-dihydrofuro[4,3,2-de][1]-benzopyran ( 10 ) using N-bromosuccinimide under irradiation and high dilution conditions. Bromide 10 was dealt with 1,8-diazabicyclo[5.4.0]undec-7-ene to afford compound 2 . Several reactions of 2 were examined. Protonation of 2 in trifluoroacetic acid occurred at the 2-position to form a pyrylium ion 12 . Catalytic hydrogenation of 2 with palladium on charcoal proceeded smoothly to give 8 . Reduction of 2 by sodium and ethanol afforded 3-ethyl-4-hydroxybenzofuran ( 14 ). Electrophilic substitutions of 2 such as formylation, acetylation, and bromination, occurred easily at the 2-position. The above results show that compound 2 has both properties of benzofuran and 4-methylenepyran.     

Characteristics of polyethylenes at low temperature studied by positron annihilation

The positron annihilation lifetime method (PAL) has been applied to study the characteristics of polyethylenes (PEs) at low temperatures between 273 and 100 K. It has been found that the intensity (I ₃) of the long-lived component of positronium (Ps) showed an increase in non-annealed PE and annealed PE in vacuo. However, PAL in PEs annealed in an atmosphere containing oxygen did not show such an increase. It has been indicated that the latter effect is due to formation of carbonyl groups through oxidation during the annealing.     

Electron g-factor in a gated InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure

We report on electron g-factor in an InAs-inserted In_0.53Ga_0.47As/In_0.52Al_0.48As heterostructure. The gate voltage dependence of g-factor is obtained from the coincidence method. The obtained g-factor values are surprisingly smaller than the g-factor value of bulk InAs, and it is close to the bare g-factor value of In_0.53Ga_0.47As. The large change in g-factor is observed by applying the gate voltage. The obtained gate voltage dependence is not simply explained by the energy dependence of g-factor.     

Extremely large binding energy of biexcitons in an organic-inorganic quantum-well material (C4H9NH3)2PbBr4

We have confirmed biexciton formation in an organic-inorganic hybrid quantum-well material (C₄H₉NH₃)₂PbBr₄ by photoluminescence and two-photon absorption measurements. The biexciton has extremely large binding energy, 60 meV, which to our knowledge is the largest value ever reported for a semiconductor. By analyzing the spectrum of biexciton luminescence, the biexciton gas temperature was found to be much higher than the bath temperature due to a higher local temperature arising from the large biexciton binding energy.     

Influence of Zn Diffusion on Bandwidth and Extinction in MQW Electroabsorption Modulators Buried with Semi-Insulating InP

A comprehensive analysis of multi-quantum-well electroabsorption modulators buried with semi-insulating (SI)-InP is presented. We quantitatively demonstrate that suppression of Zn diffusion into the burying and optical core layers plays a key role in high-speed and high-extinction operation.     

Theoretical framework and experimental procedure for modelling mesoscopic volume fraction stochastic fluctuations in fiber reinforced composites

Many engineering materials exhibit fluctuations and uncertainties on their macroscopic mechanical properties. This randomness results from random fluctuations observed at a lower scale, especially at the meso-scale where microstructural uncertainties generally occur. In the present paper, we first propose a complete theoretical stochastic framework (that is, a relevant probabilistic model as well as a non-intrusive stochastic solver) in which the volume fraction at the microscale is modelled as a random field whose statistical reduction is performed using a Karhunen–Loeve expansion. Then, an experimental procedure dedicated to the identification of the parameters involved in the probabilistic model is presented and relies on a non-destructive ultrasonic method. The combination of the experimental results with a micromechanical analysis provides realizations of the volume fraction random field. In particular, it is shown that the volume fraction can be modelled by a homogeneous random field whose spatial correlation lengths are determined and may provide conditions on the size of the meso-volumes to be considered.     

Time-resolved cavity ringdown spectroscopy on nanoparticle generation in a SiH4–H2 VHF plasma

Time-resolved cavity ringdown (τ-CRD) spectroscopy has been applied to monitor the silyl (SiH₃) radicals and nanoparticles in a pulsed very high frequency (VHF) silane-hydrogen plasma under microcrystalline silicon (μc-Si:H) deposition conditions. The measured cavity loss reveals four time intervals (I up to VI) in the first 4 s of the plasma pulse. By variation of the laser wavelength, it is demonstrated that the small cavity loss at 220 nm reflects the SiH₃ absorption in interval I. In intervals II and III, an additional cavity loss appears. This additional cavity loss corresponds to Rayleigh and Mie scattering by growing nanoparticles. Interval IV reflects the loss of nanoparticles between the electrodes during the afterglow of the plasma pulse. The evolution of the nanoparticle generation determined from the τ-CRD measurements are further confirmed by additional scanning electron microscopy analyses on the nanoparticles created in the plasma pulse.     

Study on quantification of HBs-antibody by immunoradiometric assay

Quantification of HBs-antibody assay was carried out using a commercial assay kit and standard solutions of HBs-antibody recognised as 1st reference preparation of hepatitis B immunoglobulin by WHO. Standard curve of HBs-antibody was drawn with the function of 3D-spline and the correlation factor was obtained as r = 0.999. Coefficient of intra-assay variance was 3.8% and that of inter-assay variance was 7.8%. Dilution tests showed satisfactory results in the range of 2-16 times. Correlation between value of cut-off indices and concentration of HBs-antibody was obtained as the formula of y = 2.599 x-3.894 (r = 0.992) and 2.1 of cut-off index corresponded to about 5 mIU/ml of HBs-antibody concentration.