泛函梯度数值计算的一种新方法—正交试验法

本文研究并揭示了L_(2~a)(2~(2~a-1))型正交表行(列)间的递推规律,提出了一种泛函梯度数值计算的新方法——正交试验法,该方法在计算速度和精度上优于直接梯度法;在通用性及节省内存方面优于伴随算子法。     

表面喷砂对有机玻璃沿面闪络性能影响

绝缘子表面粗糙处理是提升其沿面闪络性能的重要途径,表面粗糙化处理方式不当,极易带来表面结构不均匀,难以获得稳定耐压性能的绝缘材料。为提升绝缘子表面粗糙处理的均匀性,本文利用表面喷砂技术对圆柱形有机玻璃（PMMA）绝缘子进行了粗糙化处理研究,以球形二氧化硅（SiO₂）颗粒为工作介质,研究了不同喷砂粒径、氢氟酸后处理等因素对绝缘材料表面形貌和组分的影响,并利用短脉冲高压测试平台对喷砂处理前后有机玻璃绝缘子样品进行了真空沿面闪络性能测试。研究结果表明,喷砂处理在有机玻璃表面形成了较为均匀的凹坑,HF酸能够有效去除表面残留的SiO₂颗粒,具有表面喷砂粗糙结构的绝缘子沿面闪络电压得到了稳定提升,相较于未处理的绝缘子闪络电压提升了约80%。     

Double Andreev reflections at surface states of the topological insulators with hexagonal warping

We study the Andreev reflection(AR)at the interface of the topological insulator with hexagonal warping and superconductor junction.Due to the hexagonal warping effect,the double ARs are found in a certain range of the incident angle,where for one incident electron beam,two beams of holes are reflected back.Interestingly,both the beams of holes are reflected as retro-AR on the same side of the normal line of the interface but with different reflection angles,different from the previously reported double AR with one retro-AR and one specular-AR.The double reflections owing to the warping effect show the optics-like property of the Dirac fermion and can stimulate the double reflections of light in anisotropic crystals.In addition,we find that the double ARs are dependent on the hexagonal warping parameter nonmonotonically,and in an intermediate strength the double AR phenomenon is prominent,providing a possibility to explore the warping parameter of topological insulators.     

Study of the superconducting transition in YBa2Cu3O7−δ single crystal by thermopower measurements

We have determined the superconducting transition in YBa₂Cu₃O_7−δ single crystal by measurements of thermopower. Two transitions were observed in both the ab-plane and the c-direction. The high temperature transition may have a close relation to the surface shell of the crystal.     

脊加载曲折波导行波管注波互作用的线性理论研究

提出了一类新型毫米波大功率微波器件——脊加载曲折波导行波管,推导出了引入电子注后的"热"色散方程.通过数值求解此方程,研究了加脊尺寸和电子注参数对小信号增益影响.计算结果表明:通过适当的尺寸设计和工作参数的选择,此结构在Kα波段具有18.51%的3 dB增益带宽和1.15 dB/周期的增益;相比于常规曲折波导结构,脊加载结构在保证一定带宽的情况下,具有更高的增益和电子效率;为了进一步提高增益,可以适当增加脊宽度和高度,也可在一定范围内增加电子注电流. 关键词： 毫米波 曲折波导 脊加载 小信号增益     

Orientation dependence of structural transition in fcc Al driven under uniaxial compression by atomistic simulations

By molecular dynamics simulations employing an embedded atom method potential,we have investigated structural transformations in single crystal Al caused by uniaxial strain loading along the [001],[011] and [111] directions. We find that the structural transition is strongly dependent on the crystal orientations. The entire structure phase transition only occurs when loading along the [001] direction,and the increased amplitude of temperature for [001] loading is evidently lower than that for other orientations. The morphology evolutions of the structural transition for [011] and [111] loadings are analysed in detail. The results indicate that only 20% of atoms transit to the hcp phase for [011] and [111] loadings,and the appearance of the hcp phase is due to the partial dislocation moving forward on {111} fcc family. For [011] loading,the hcp phase grows to form laminar morphology in four planes,which belong to the {111} fcc family; while for [111] loading,the hcp phase grows into a laminar structure in three planes,which belong to the {111} fcc family except for the (111) plane. In addition,the phase transition is evaluated by using the radial distribution functions.     

吸收式光纤温度传感器的研究

提出了一种利用半导体光吸收谱随温度变化原理设计的半导体吸收式光纤温度传感器.该传感器用GaAs晶片作为温度敏感元件,以光纤作为传光介质,发光二极管作为光源,光电管作为光电转换器件.利用双光束补偿原理,消除了由于光源不稳定产生的干扰.研制出的光纤传感器具有体积小,结构简单,抗电磁干扰,灵敏度高等优点.实验表明:该传感器在－20℃~85℃温度范围内可以达到0.1℃的准确度,可以实现强电磁干扰下的高空飞行器内环境温度的测量.为进一步实现光传飞控系统中的温度测控奠定了基础.     

前馈PMD补偿实验中从偏振度椭球获得差分群时延的研究

运用偏振度(DOP)椭球法从实验的有限样点数据中获得了差分群时延和偏振主态方向,这为前馈补偿实验提供了最关键的技术因素.在实验中获得了偏振主态方向和DGD,而且当DGD较小时,从实验所获得的DGD值与理论模拟的变化趋势基本一致.结果表明当DGD较小时,可以用偏振度椭球法从实验上得到正确的DGD和偏振主态方向.     

La1-xPrxMnO3(x=0.1,0.2)薄膜庞磁电阻性质的研究

一种新的庞磁电阻氧化物薄膜La1-xPrxMnO3(x=0.1,0.2)薄膜用脉冲激光沉积(PLD)方法生长在(100)SrTiO3单晶基底上.XRD结果显示薄膜具有很好的外延单晶取向.电输运和磁性质的研究表明薄膜具有显著的庞磁电阻效应(CMR)效应,其中磁电阻比率达95%(在5T的磁场下).X射线光电子能谱(XPS)的结果表明薄膜体系中Pr离子的价态为+4价,因此该薄膜很可能是电子掺杂的庞磁电阻体系.     

具有纵向辅助耗尽衬底层的新型横向双扩散金属氧化物半导体场效应晶体管

为了优化横向双扩散金属氧化物半导体场效应晶体管(lateral double-diffused MOSFET,LDMOS)的击穿特性及器件性能,在传统LDMOS结构的基础上,提出了一种具有纵向辅助耗尽衬底层(assisted depletesubstrate layer,ADSL)的新型LDMOS.新加入的ADSL层使得漏端下方的纵向耗尽区大幅向衬底扩展,从而利用电场调制效应在ADSL层底部引入新的电场峰,使纵向电场得到优化,同时横向表面电场也因为电场调制效应而得到了优化.通过ISE仿真表明,当传统LDMOS与ADSL LDMOS的漂移区长度都是70μm时,击穿电压由462 V增大到897 V,提高了94%左右,并且优值也从0.55 MW/cm~2提升到1.24 MW/cm~2,提升了125%.因此,新结构ADSL LDMOS的器件性能较传统LDMOS有了极大的提升.进一步对ADSL层进行分区掺杂优化,在新结构的基础上,击穿电压在双分区时上升到938 V,三分区时为947 V.