Recommendation in evolving online networks

Recommender system is an effective tool to find the most relevant information for onlineusers. By analyzing the historical selection records of users, recommender system predictsthe most likely future links in the user-item network and accordingly constructs apersonalized recommendation list for each user. So far, the recommendation process ismostly investigated in static user-item networks. In this paper, we propose a model whichallows us to examine the performance of the state-of-the-art recommendation algorithms inevolving networks. We find that the recommendation accuracy in general decreases with timeif the evolution of the online network fully depends on the recommendation. Interestingly,some randomness in users’ choice can significantly improve the long-term accuracy of therecommendation algorithm. When a hybrid recommendation algorithm is applied, we find thatthe optimal parameter gradually shifts towards the diversity-favoring recommendationalgorithm, indicating that recommendation diversity is essential to keep a high long-termrecommendation accuracy. Finally, we confirm our conclusions by studying therecommendation on networks with the real evolution data.     

汝阳地区熊耳群火山岩内夹层硅质岩的微区特征及地质意义

熊耳群是前寒武纪火山-沉积作用的产物,其顶部的马家河组(玄武)安山质火山岩内发育了夹层状热水成因硅质岩。选择熊耳群马家河组硅质岩夹层中的碧玉岩为对象,利用偏光显微镜,XRD,Raman和EBSD等方法剖析了其微区特征。研究结果显示：硅质岩内石英颗粒的显微镜和EBSD照片均表现出颗粒细小、结晶程度低和紧密堆积结构等特点,这完全吻合热水沉积硅质岩的特征;硅质岩内粒径不同的颗粒呈条带(或薄层)状交互出现,不同条带(或薄层)内矿物的组成存在明显的差异,这应该反映了原始物质供给的周期性变化;XRD分析结果指示硅质岩内的主要矿物为低温石英,其晶胞参数为a=b=0.491 3 nm,c=0.540 5 nm和Z=3;EBSD照片和Raman分析结果显示硅质岩内微量的杂质矿物形成于不同阶段,其中粘土矿物和黄铁矿呈零星分布并反映了原始沉积成因,长英质矿物和铁镁硅酸盐矿物均来源于火山凝灰质沉积;火山凝灰质矿物的颗粒偏大并构成了硅质岩内的粗颗粒条带(或薄层),它们与热水沉积为主的细颗粒矿物条带(或薄层)交互产出,这反映了火山作用的周期性反复活动;后期的碳酸盐热液沉淀于硅质岩内裂隙中,它们还导致石英颗粒边缘有序度升高。虽然熊耳群硅质岩内的矿物种类和成因均极为复杂,但火山物质的输入是导致熊耳群硅质岩SiO₂含量偏低的根本原因并得到了硅质岩内大量火山成因矿物的证实。在硅质岩的微组构研究中,Raman光谱分析可以有效的揭示微区上矿物的类型、微区结构及有序度,这些特征是反映硅质岩内部矿物形成与演化过程中微区变化的重要信息。     

Reliability analysis of stochastic structural system considering static strength, stiffness and fatigue

Multi-failures are possible to appear in the process of using the structural system, such as dead load failure, fatigue failure and stiffness failure. The expression of residual resistance is given based on the impact of random crack propagation in- duced by the fatigue load on the critical limit stress and section modulus in this paper. The failure modes of every element of the structural system are analyzed under dead and fatigue loads, and the influence of the correlation of failure modes on reliability of the element is considered. Failure mechanism and the correlation of failure modes under dead and fatigue loads are discussed, and the method of reli- ability analysis considering static strength, fatigue and stiffness is given. A nu- merical example is analyzed, which indicates that the failure probability is different for different use life and the influence of dead and fatigue loads on reliability of the structural system is different as well. This method of reliability analysis, in the pa- per, is better than the method only considering a single factor (or static strength, or fatigue, or stiffness, etc.) in the case of practical engineering.     

Quantum phase transitions of fermionic atoms in an anisotropic triangular optical lattice

The effect of anisotropy caused by a confining potential on the properties of fermionic cold atoms in a triangular optical lattice is systematically investigated by using the dynamical cluster approximation combined with the continuous time quantum Monte–Carlo algorithm.The quantum phase diagrams which reflect the temperature–interaction relation and the competition between the anisotropic parameter and the interaction are presented with full consideration of the anisotropy of the system.Our results show that the system undergoes a transition from Fermi liquid to Mott insulator when the repulsive interaction reaches a critical value.The Kondo effect also can be observed in this system and the pseudogap is suppressed at low temperatures due to the Kondo effect.A feasible experiment protocol to observe these phenomena in an anisotropic triangular optical lattice with cold atoms is proposed,in which the hopping terms are closely related to the lattice confining potential and the atomic interaction can be adjusted via the Feshbach resonance.     

基于USB的卫星通用化地面测试软件的设计

本文将软件工程中的组件技术引入卫星测试领域,提出了利用测试功能组件构建通用化测试软件的设计思路。首先,对现有卫星型号的地面测试任务做共性研究;其次,总结通用化测试软件的研制需求;然后,进行软件概要设计和详细设计;最后,软件实现。经验证,本文提出的基于USB接口的卫星通用化地面测试软件,通用性强,能较好的满足多个分系统单机设备的测试要求。     

Heterojunction light emitting diodes fabricated with different n-layer oxide structures on p-GaN layers by magnetron sputtering

We grew heterojunction light emitting diode (LED) structures with various n-type semiconducting layers by magnetron sputtering on p-type GaN at high temperature. Because the undoped ZnO used as an active layer was grown under oxygen rich atmosphere, all LED devices showed the EL characteristics corresponding to orange-red wavelength due to high density of oxygen interstitial, which was coincident with the deep level photoluminescence emission of undoped ZnO. The use of the Ga doped layers as a top layer provided the sufficient electron carriers to active region and resulted in the intense EL emission. The LED sample with small quantity of Mg incorporated in MgZnO as an n-type top layer showed more intense emission than the LED with ZnO, in spite of the deteriorated electrical and structural properties of the MgZnO film. This might be due to the improvement of output extraction efficiency induced by rough surface.     

Investigation of β-Ga_2O_3 films and β-Ga_2O_3/GaN heterostructures grown by metal organic chemical vapor deposition

In this work,(-201) β-Ga_2O_3 films are grown on GaN substrate by metal organic chemical vapor deposition(MOCVD). It is revealed that the β-Ga_2O_3 film grown on GaN possesses superior crystal quality, material homogeneity and surface morphology than the results of common heteroepitaxial β-Ga_2O_3 film based on sapphire substrate. Further, the relevance between the crystal quality of epitaxial β-Ga_2O_3 film and the β-Ga_2O_3/GaN interface behavior is investigated. Transmission electron microscopy result indicates that the interface atom refactoring phenomenon is beneficial to relieve the mismatch strain and improve the crystal quality of subsequent β-Ga_2O_3 film. Moreover, the energy band structure of β-Ga_2O_3/GaN heterostructure grown by MOCVD is investigated by X-ray photoelectron spectroscopy and a large conduction band offset of 0.89 eV is obtained. The results in this work not only convincingly demonstrate the advantages of β-Ga_2O_3 films grown on GaN substrate, but also show the great application potential of MOCVD β-Ga_2O_3/GaN heterostructures in microelectronic applications.     

A Bandpass Filter Based on Dielectric Layers with a Strip Conductor Subwavelength Grating at Their Interfaces

Doklady Physics - The design of a multilayer bandpass filter has been investigated, in which each of the half-wavelength resonators consists of two dielectric layers with outer strip conductor...