Origin of ion beam mixing effects on morphological features in solid-phase titanium silicide formation

The origin of the ion beam mixing effect, which causes the formation of smooth silicide films, is investigated for the Ti/Si solid-phase silicidation reaction. Ge ion beam mixing of a conventional Ti/c-Si structure with an oxide-contaminated interface shows an obvious effect when the implant conditions are such that the Ti/Si interface is amorphized. On the other hand, silicidation without ion mixing for Ti/a-Si and Ti/c-Si structures with oxide-free interfaces, prepared by sequential deposition in UHV, results in smooth and rough film surfaces, respectively. This strongly suggests that the ion beam mixing effect primarily comes from the amorphization of the Si substrate surface rather than the destruction of the interfacial oxide film.     

Polarized neutron reflectometer SUIREN at JRR-3

Recent status of the neutron reflectometer SUIREN is presented. Since its startup in 2006, SUIREN has been the only neutron reflectometer in Japan for magnetic samples with high magnetic field sample environment, and used for investigations of magnetic films, solid-liquid interfaces and other solid thin films. SUIREN provides monochromatic neutron beam of 3.93 Å for vertically placed sample surface. Polarized beam is also available together with a 1 T electromagnet for sample. Beam intensity at the sample position in the unpolarized mode is for beam collimation of Δθ=0.08. Reflectivity can be explored down to 10^-6.     

Influence of Zn Diffusion on Bandwidth and Extinction in MQW Electroabsorption Modulators Buried with Semi-Insulating InP

A comprehensive analysis of multi-quantum-well electroabsorption modulators buried with semi-insulating (SI)-InP is presented. We quantitatively demonstrate that suppression of Zn diffusion into the burying and optical core layers plays a key role in high-speed and high-extinction operation.     

5-Aza-2′-deoxycytidine reactivates the CDH1 gene without influencing methylation of the entire CpG island or histone modification in a human cancer cell line

It is well-recognized that DNA methylation and histone modifications play critical roles in epigenetic regulation of gene activity through the alteration of chromatin structure. Recent studies have shown that in a subset of cancer cells, the silencing of the human E-cadherin (CDH1) gene is associated with hypermethylation of the CpG island. However, the associated molecular mechanism remains unclear. To understand the mechanism, we have investigated the alteration of CpG island methylation and histone modifications during the reactivation of the CDH1 gene by treatment with 5-aza-2′-deoxycytidine (5-aza-dC). Although the CDH1 gene expression was recovered by treatment with 5-aza-dC in a liver cancer cell line Li21, the methylation status of the entire CpG island and acetylation and methylation status of associated histones were not significantly altered. These results demonstrate that the silenced CDH1 gene can be reactivated without apparent alteration of histone modification or CpG island methylation.     

Classical in-plane negative magnetoresistance and quantum positive magnetoresistance in undoped InSb thin films on GaAs (1 0 0) substrates

Magnetoresistance (MR) effects have been investigated in perpendicular and parallel magnetic fields at 300, 80 K and liquid He temperatures for undoped InSb thin films 0.1–2.3 μm thick grown on GaAs(1 0 0) substrates by MBE. At high temperatures, the intrinsic carriers show the parabolic negative MR observable only in magnetic fields parallel to the film. The skipping-orbit effect due to surface boundary scattering in the classical orbits in the plane vertical to the film has been argued to be responsible for the negative MR. At low temperatures (T=80 K), the transport is dominated by the two-dimensional (2D) electrons in the accumulation layers at the InSb/GaAs(1 0 0) hetero interface; MR is positive and shows a logarithmic increase with anisotropy between parallel and perpendicular field orientation, arising from the 2D weak anti-localization (WAL) that reflects the interplay between the spin-Zeeman effect and strong spin–orbit interaction caused by the asymmetric potential at the interface (Rashba term). The zero-field spin splitting energy of Δ₀13 meV, the electron effective mass of m^*0.10m₀ seven times of the band edge mass in bulk InSb and the effective g-factor of |g^*|15 in the accumulation layer have been inferred from fits of MR for the 0.1 μm thick film to the 2D WL theory.     

Common-path achromatic interferometer-coronagraph: nulling of polychromatic light

A three-dimensional common-path interferometer is proposed, which can achromatically null out an on-axis source while it maintains the detectability of an off-axis source. A geometric phase in the three-dimensional interferometer introduces an achromatic pi-phase shift to the light from the on-axis source, such that destructive interference nulls out the axial light at one of the ports of the interferometer. Light from the off-axis source, which is exempt from the pi-phase shift, comes out from both ports with equal intensity. The common-path scheme makes the system highly immune to environmental disturbances.     

Dynamical study of femtosecond-laser-ablated liquid-aluminum nanoparticles using spatiotemporally resolved x-ray-absorption fine-structure spectroscopy

We study the temperature evolution of aluminum nanoparticles generated by femtosecond laser ablation with spatiotemporally resolved x-ray-absorption fine-structure spectroscopy. We successfully identify the nanoparticles based on the L-edge absorption fine structure of the ablation plume in combination with the dependence of the edge structure on the irradiation intensity and the expansion velocity of the plume. In particular, we show that the lattice temperature of the nanoparticles is estimated from the L-edge slope, and that its spatial dependence reflects the cooling of the nanoparticles during plume expansion. The results reveal that the emitted nanoparticles travel in a vacuum as a condensed liquid phase with a lattice temperature of about 2500 to 4200 K in the early stage of plume expansion.     

Dispersive processes of light-induced defect creation in hydrogenated amorphous silicon

The growing curve of light-induced dangling bonds under illumination has been observed for various intensities of illumination in a-Si:H. It is fitted to a stretched exponential function and then two parameters β and τ involved in the function are estimated as a function of saturated dangling bond density . The experimental values of β, τ, and are compared with those calculated based on our model of light-induced defect creation in a-Si:H.     

Suppressed speckle contrast of blue light emission out of white lamp with phosphors excited by blue laser diodes for high-brightness lighting applications

The speckle contrast of blue light emission out of high-brightness white lamps using phosphors excited by InGaN/GaN blue laser diodes is evaluated as a measure of coherence. As a result, speckle contrast of as low as 1.7%, the same level as a blue light emitting diode, is obtained. This implies that the original blue laser light can be converted into incoherent light through lamp structures without any dynamic mechanisms. This unique speckle-free performance is considered to be realized by multiple scattering inside the lamp structure, the multi-longitudinal mode operation of the blue laser diodes, and the use of multiple laser diodes. Such almost-incoherent white lamps can be applied for general lighting without any nuisance of speckle noise and should be categorized as lamps rather than lasers in terms of laser safety regulation.     

Surface-sensitive NMR in optically pumped semiconductors

We present a scheme of surface-sensitive nuclear magnetic resonance in optically pumped semiconductors, where an NMR signal from a part of the surface of a bulk compound semiconductor is detected apart from the bulk signal. It utilizes optically oriented nuclei with a long spin-lattice relaxation time as a polarization reservoir for the second (target) nuclei to be detected. It provides a basis for the nuclear spin polarizer [IEEE Trans. Appl. Supercond. 14:1635, 2004], which is a polarization reservoir at the surface of the optically pumped semiconductor that polarizes nuclear spins in a target material in contact through the nanostructured interfaces.