用面垒探测器测定n型硅中少数载流子的扩散长度

当α粒子穿入Au-Si面垒探测器的扩散区时,其产生的非平衡少数载流于扩散到势垒边界而被收集,因此在探测器两端有一输出脉冲。本文从理论上计算了扩散区中的收集效率,获得了收集效率和扩散长度的函数关系。另外将实验上测定的收集效率与理论加以比较,从而确定少数载流子的扩散长度。 关键词：     

电子对於原子半导体晶格的形变作用

乾根—别卡曾经分析过原子晶体中的极化子问题。文中指出,其中弹性形变的考虑是不正确的,而且“绝热型”的极化子,在例如Ge,Si等原子晶体中存在的可能性是十分微小的。以微扰论为基础的计算证明,电子引起的局部体积变化发生在半径≈λ的范围内,λ是以声速运动的电子的德布罗意波长。局部体变的数值等於E/(α+4/3μ)(E为形变势常数,α和μ分别为体变和切变模量)。局部体变还在样品中引起一个均匀的形变,两者合起来使样品体积改变E/α。具体的分析证明,在类氢的杂质能级中的电子使样品体积产生同样的体积变化。这个效应是相当大的;例如,在Ge和Si这样的晶体中,效应甚至可以舆实验所观测到Ⅲ,Ⅴ族杂质原子的体积效应相比拟。导带中低速电子能量的改变约等於(电子质量/原胞质量)(E/(kΘ_D))E;在Ge晶体中,如果E=1—10电子伏,能量改变是0.001—0.1电子伏。相应的有效质量改变是1/1000—1/10电子质量。在类氢杂质能级中,电子能量改变远比上值为小;理论上电子—晶格互作用有着可能致使类氢能级自发电离。     

一种测量次级中子能谱的新方法

采用双飞行时间法创建了一台非常规快中子飞行时间谱仪，排除了用D（d,n)^3He中子源测量8－13MeV能区次级中子双微分截面时源中破裂中子群对次级中子能谱测量的干扰，结合常规快中子飞行时间谱仪的测量，实现了用D（d,n)^3He中子源开展8－13MeV中子能区次级中子双微分截面的测量。     

On a Moving Boundary Solution to the Fokker-Planck Equation for Particle Transport in Turbulent Flows with Absorbing Boundaries

A Fokker—Planck equation describing the transport of particlesin turbulent flows is considered. The initial value problemwith perfectly absorbing boundary conditions on the wall issolved by introducing a characteristic line in phase space.It is found that the solution domain in phase space decomposesinto three regions which are connected by two moving boundaries,and the moving boundaries can be found explicitly. For Gaussian-typeinitial conditions, the solution of the Fokker—Planckequation can be obtained in each of the three regions by solvinga diffusion equation. An approximation procedure for the generalinitial value problem is established and the approximate solutionsequence is shown to be convergent in a certain Hilbert space.     

The Crystal Structure of Isosteviol

The title compound was prepared and its crystal structure was determined using X-ray crystallographic method. The crystal is orthorhombic, space group is P212121 with a= 1. 1114(2) nm, b=1.7677(3) nm, c=1.8312(3) nm; Z=8. The geometric structure and conformation of the title compound obtained by MMX molecular mechanics calculation are in agreement with those obtained from X-ray determination.     

光阴极电子枪中金属光阴极的热发射度研究

对光阴极电子注入器中金属光阴极的热发射度进行了理论研究.金属光阴极的热发射度由两部分构成.一方面对于理想平坦的阴极,光电子穿越表面势垒后有一定的残余动能,造成一定的热发射度,这部分前人已经做过一些理论研究.本文改进已有的模型,进一步给出了理想平坦光阴极的热发射度.另一方面,阴极表面的粗糙度将造成热发射度的增加,本文首次解析地分析了表面粗糙度对光阴极电子枪热发射度的影响,得到表面粗糙度造成的热发射度的估计公式.本文对金刚石车削后的铜、镁的表面形貌进行了测量,表明粗糙度造成的热发射度大约0.4mm·mrad.本文的热发射度理论能够较好的解释目前国际上铜、镁阴极的热发射度的测量结果.     

3S1态电子偶素3γ衰变的γ射线能谱测量

用具有时间选择功能的高纯锗γ能谱仪测量了³S₁态电子偶素3γ衰变放出的连续γ能谱的300—510keV能区。结果表明,在实验误差范围内与量子电动力学理论曲线一致。 关键词：     

Studies on Silicon-Containing Fragrance Raw Materials (Ⅳ)——Synthesis of Spiro-Acetals of 5-Trimethylsilylcyclohex- 2- (or 3)enone

Some novel spiro-acetals of 5-trimethylsilylcyclohex-2(or 3)-enone were synthesized from the reaction of silylcyclohexenones with the corresponding a, ω-diols in the presence of oxalic acid or adipic acid.     

CRYSTAL STRUCTURE INVESTIGATION OF VANADYL COMPLEXES OF TRIDENTATE LIGAND (Ⅰ)——THE CRYSTAL STRUCTURES OF BIS[(1-(2,4-PENTANE- DIONATO(NITROBENZOYL) HYDRAZONE)-2- ETHOXY)OXOVANADIUM] AND BIS-[(1-(2, 4-PENTANEDIONATO-(3-NITROBENZOYL) HYDRAZONE)-2- METHO

The title complexes were obtained by the reactions of bis(2,4-pentanedionato)oxovanadium VO(Acac)_2 and m-nitrophenylhydrazide m-NO_2PhCONHNH_2 in the media EtOH and MeOH respectively. The compound (Ⅰ) crystallizes in the space group PT with unit cell dimensions a=8.123(2), b=10.409(5), c=10.822(4), α=65.78(3)°, β=85.50(3)°,γ=89.04(3)°. The compound (Ⅱ) crystallizes in the space group P2_1/a with unit cell dimensions a=7.745(2), b=19.164(5), c=10.787(4), β=107.87(2)°. The resuhs of structural analyses show that the two compounds have the same characteristics: the tridentate ligand formed by condensation occupies three of the four equatorial positions of vanadium and the rest equatorial position is occupied by alkoxy group RO~-. As RO~-group also bridges the sixth coordinated position of each vanadium atom, it brings about the formation of the new type binuclear complexes of vanadium.