Spectroscopical diagnostics of alpha particles in the TSP tokamak

Reported to the 5th All-Union Conference on High-Temperature Plasma Diagnostics (June 18–22, 1990, Minsk).     

Interaction of CdSe/ZnS core-shell semiconductor nanocrystals in solid thin films

The optical properties of CdSe/ZnS semiconductor nanocrystals with the core-shell structure are studied upon visible-laser excitation in a wide range of flux densities. It is demonstrated that the dimensional quantization effect is preserved in the films with a limiting high concentration of nanocrystals. A strong bathochromic shift of the absorption and luminescence peaks relative to the peak positions in the corresponding spectra of nanocrystals in films with a relatively low concentration of nanocrystals and solutions is caused by a high concentration of nanocrystals and the dipole moment related to the asymmetry of the nanoparticles. The shift is varied from 35 to 50 nm depending on the film thickness. The luminescence spectra of the films remain unchanged upon an increase in the laser intensity to 1 × 10⁶ W/cm². The laser action on the nanoparticle films is studied at intensities (5 × 10⁶?1 × 10⁹ W/cm²) higher than the damage threshold.     

射频磁控溅射法制备薄膜电池电极的计算机模拟初步

计算机模拟仿真射频磁控溅射实验制备薄膜及离于电池电极,研究了在特定实验条件下薄膜的生长过程,并分析了影响薄膜生长的部分因素。     

INFLUENCE OF MAGNETIC FIELD INHOMOGENEITY ON OPERATION OF THE THz GYROTRON WITH A PULSE MAGNET

Influence of magnetic field tapering on operation of a gyrotron working in the TE _4,12 mode at the second harmonic frequency 1013.67 GHz is investigated. It is found that the existing inhomogeneity of the magnetic field of the order of 0.25%–0.50% in the cavity allows one to achieve higher efficiencies. It improves also mode competition scenario by suppressing oscillations of the two parasitic TE _3,6⁺ and TE _5,5⁻ modes at the fundamental frequencies 513.35 GHz and 503.64 GHz, respectively.     

Schottky metal library for ZNO-based UV photodiode fabricated by the combinatorial ion beam-assisted deposition

A binary alloy Schottky barrier diode on zinc oxide (ZnO) was developed using the combinatorial ion beam-assisted deposition system. The compositional fraction of the binary alloy was continuously varied using the composition-spread technique, to control the Schottky barrier height. After metal deposition, patterned Schottky diodes were fabricated on a ZnO single-crystal substrate. Pt-Ru alloy was selected from the work function viewpoint. Our experiments showed that the compositional fraction of the Schottky binary alloys changed continuously as designed and the Schottky barrier heights measured by current-voltage (I-V) measurements increased with increasing Pt content. Maximum barrier height difference for ZnO was 137 meV. Using ion beam deposition in parallel with the combinatorial system showed that the Schottky barrier heights for ZnO can be controlled by binary metal alloying.