Electron traps and positive DLTS signals in VPE GaAs MESFETs

Capacitance DLTS measurements have been performed in VPE GaAs MESFETs prepared on Bridgman Cr-doped and LEC undoped semi-insulating substrates. A band of electron traps not intrinsically related to the VPE growth process and accumulating near the metal (gate) — semiconductor interface was detected in all the samples. Deeper regions into the channel were free from any detectable trap. Near pinch-off conditions, a positive capacitance signal was found to dominate the DLTS spectra only in the case of samples prepared on Cr-doped substrates. The hypothesis of this positive transient being related to changes in the occupation of surface states in the ungated surface access regions has been checked by comparing experimental and calculated dependencies of the signal amplitude on reverse gate voltage. Unexplained discrepancies, together with the absence of positive signal in MESFETs prepared on LEC undoped substrates, suggest the possibility of hole emission from hole traps within the bulk of the device.     

Porosity and typical properties of real-valued continuous functions

Some well-known theorems on typical properties of real-valued continuous functions defined on [0, 1] are improved using the notion of porosity.     

Exact soliton solutions of spinor Bose-Einstein condensates

We study matter-wave solitons in Bose-Einstein condensates of ultracold gaseous atoms with spin degrees of freedom and present a class of exact solutions based on the inverse scattering method. The one-soliton solutions are classified with respect to the spin states. We analyze collisional effects between solitons in the same or different spin state(s), which reveals a very interesting possibility: we can manipulate the spin dynamics by controlling the parameters of colliding solitons.     

Acoustic field in a closed layered shell with resonant systems

The acoustic field inside a shell excited by a spatially inhomogeneous harmonic pressure field is studied. The shell is assumed to have a finite length, a set of orthogonal stiffening ribs, two ends bounding the acoustic volume, and a sound-insulating structure, which includes layers of sound-insulating material, resonant elements, and an interior panel. The shell is considered to be orthotropic with boundary conditions corresponding to a free support. For the acoustic field in the closed volume, analytical expressions are derived with allowance for the elastoacoustic interaction of the shell with the sound-insulating layers and with the medium both inside the shell (with arbitrary impedance values at the ends) and outside it. These expressions are used to investigate the effect of different types of resonant systems on the sound field inside the shell.     

3D-TOFSIMS characterization of black spots in polymer light emitting diodes

The occurrence and formation of black spots areas in PolyLED devices has been studied by time-of-flight SIMS (TOFSIMS). The composition, shape and position of the black spots is visualised by three-dimensional (3D)-TOFSIMS depth-profiling. It has been established that the formation of non-emissive spots is due to the growth of aluminium oxide clusters at the AlBa/polymer interface. Electron injection in the black spots is lost by the resulting local increase of the resistivity of the cathode.     

Specific features of photoisomerization of provitamin D 3 in a nematic liquid crystal

Photoisomerization of provitamin D ₃ (7-dehydrocholesterol) in a nematic liquid crystal (ZLI-1695, Merck) is investigated in detail by UV absorption spectroscopy. It is found that dissolution of chiral molecules of provitamin D ₃ induces the cholesteric phase in a nematic. The spectral kinetics of photoisomerization in this phase changes significantly from that in an ethanol solution. A sharp nonmonotonic dependence of the increase in accumulation of trans isomer tachysterol in a liquid crystal matrix with a decrease in the induced cholesteric pitch from 2200 to 25 μm is revealed.     

Some empirical relations for electron mobility in II–VI compound semiconductors

Electron mobility has been calculated in a number of binary II–VI compound semiconductors using a displaced Maxwellian distribution function and taking the various scattering mechanisms into consideration at different lattice temperatures and for various amounts of ionized impurity concentrations. It is observed that the low field mobility values can be expressed by a cubic power relationship with lattice temperature and with ionized impurity concentration using a least mean square fit technique with an accuracy better than 5 per cent. Similarly, the field dependence of mobility can also be expressed as a power series of the applied electric field. It is suggested that these equations can be profitably used for a quick estimation of mobility values as a check on experiments and also as sufficiently accurate formulae for simulation and modelling purposes.     

Theory of interfacial phase transitions in surfactant systems

The spin-1 Ising model, which is equivalent to the three-component lattice gas model, is used to study wetting transitions in three-component surfactant systems consisting of an oil, water, and a nonionic surfactant. Phase equilibria, interfacial profiles, and interfacial tensions for three-phase equilibrium are determined in mean field approximation, for a wide range of temperature and interaction parameters. Surfactant interaction parameters are found to strongly influence interfacial tensions, reducing them in some cases to ultralow values. Interfacial tensions are used to determine whether the middle phase, rich in surfactant, wets or does not wet the interface between the oil-rich and water-rich phases. By varying temperature and interaction parameters, a wetting transition is located and found to be of the first order. Comparison is made with recent experimental results on wetting transitions in ternary surfactant systems.This paper is dedicated to J. K. Percus in honor of his 65th birthday.     

Applying Stochastic Algorithms to a Locomotive Scheduling Problem

This paper addresses a problem common to all railway networks. Given a fixed train timetable and locomotives (or other forms of traction) of various types, each train must be allocated a locomotive. This paper examines the use of stochastic algorithms for such a problem. Two types of algorithm are used—a simple ‘local improvement’ method, performed successively from randomly chosen starting points, and a ‘simulated annealing’ approach. Both are found to give considerably better results than a deterministic method in current use, and the annealing approach is probably the better stochastic method.