Fractal-Generated Turbulence in Opposed Jet Flows

The opposed jet configuration presents a canonical geometry suitable for the evaluation of calculation methods seeking to reproduce the impact of strain and re-distribution on turbulent transport in reacting and non-reacting flows. The geometry has the advantage of good optical access and, in principle, an absence of complex boundary conditions. Disadvantages include low frequency flow motion at high nozzle separations and comparatively low turbulence levels causing bulk strain to exceed the turbulent contribution at small nozzle separations. In the current work, fractal generated turbulence has been used to increase the turbulent strain and velocity measurements for isothermal flows are reported with an emphasis on the axis, stagnation plane and the distribution of mean and instantaneous strain rates. Energy spectra were also determined. The instrumentation comprised hot-wire anemometry and particle image velocimetry with the flows to both nozzles seeded with 1  $\upmu$ m silicon oil droplets providing a relaxation time of ? 3 $\upmu$ s. It is shown that fractal grids increase the turbulent Reynolds number range from 48–125 to 109–220 for bulk velocities from 4 to 8 m/s as compared to conventional perforated plate turbulence generators. Low frequency motion of the order 10 Hz could not be completely eliminated and probability density functions were determined for the location of the stagnation plane. Results show that the fluctuation in the position of the stagnation plane is of the order of the integral length scale, which was determined to be 3.1±0.1 mm at the nozzle exits through the use of hot-wire anemometry. Flow statistics close to the fractal plate located upstream of the nozzle exit were also determined using a transparent glass nozzle.     

First observation of the P-wave spin-singlet bottomonium states hb(1P) and hb(2P)

We report the first observations of the spin-singlet bottomonium states h(b)(1P) and h(b)(2P). The states are produced in the reaction e(+)e(-)→h(b)(nP)π(+)π(-) using a 121.4 fb(-1) data sample collected at energies near the Υ(5S) resonance with the Belle detector at the KEKB asymmetric-energy e(+)e(-) collider. We determine M[h(b)(1P)]=(9898.2(-1.0-1.1)(+1.1+1.0)) MeV/c(2) and M[h(b)(2P)]=(10,259.8±0.6(-1.0)(+1.4)) MeV/c(2), which correspond to P-wave hyperfine splittings ΔM(HF)=(+1.7±1.5) and (+0.5(-1.2)(+1.6)) MeV/c(2), respectively. The significances of the h(b)(1P) and h(b)(2P) are 5.5σ and 11.2σ, respectively. We find that the production of the h(b)(1P) and h(b)(2P) is not suppressed relative to the production of the Υ(1S), Υ(2S), and Υ(3S).     

Short-term forecasting of electricity demand by decomposition analysis

A model for short-term forecasting of electricity demand is developed, which consists of an annual base load augmented by demand variations on a weekly, daily, and hourly or half-hourly basis. Each of these components is individually modelled and forecast, and the aggregate forecast is refined by inclusion of a stochastic component for characterization of variations not attributable to elements of time. The approach is consistent with the operational concept of power system management, and can be readily adopted for on-line forecasting and control.     

Influence of substrate temperature and ion-beam energy on the syntheses of aluminium nitride thin films by nitrogen-ion-assisted pulsed-laser deposition

Aluminium nitride (AlN) thin films have been grown on Si(100), Si(111) and Sapphire Al₂O₃(001) substrates by pulsed KrF excimer laser (wavelength 248 nm, duration 30 ns) ablation of an AlN target with the assistance of nitrogen-ion-beam bombardment. The influence of process parameters such as substrate temperature and ion-beam energy has been investigated in order to obtain high-quality AlN films. The AlN films deposited by pulsed-laser deposition (PLD) have been characterized by X-ray diffraction (XRD) to determine the crystalline quality, grain size and growth orientation with respect to the substrate. The XRD spectra of AlN films on Si(100), Si(111) and Sapphire substrates yield full-width-half-maximum (FWHM) values of approximately 1.6. The bonding characteristics in the films have been evaluated by Raman spectroscopy. The chemical composition of the films has been characterized by X-ray photoelectron spectroscopy (XPS). The surface morphology of the films has been measured by atomic force microscopy (AFM). At a substrate temperature of at least 600 °C, polycrystalline AlN films with orientations of AlN(100) and AlN(101) have been synthesized. PACS 68.55.-a; 81.15.Fg; 77.84.Bw     

Unprecedented Acid‐Promoted Polymerization and Gelation of Acrylamide: A Serendipitous Discovery

Dilute acid polymerizes degassed, aqueous acrylamide with concomitant gelation, without the need for added free radical initiator or cross‐linking agent. This reaction is accelerated by sonication or UV irradiation, but inhibited by adventitious oxygen or the addition of a free radical inhibitor, suggesting an acid‐accelerated free radical process. The resulting hydrogels are thixotropic in nature and partially disrupted by the addition of chaotropic agents, indicating the importance of hydrogen bonding to the 3D network. This discovery was made while trying to prepare pectin‐polyacrylamide hydrogels. We observed that pectin initiated the gelation of acrylamide, but only if the aqueous pectin samples had a pH lower than ca. 5.