Bismuth compounds in organic synthesis. A one-pot synthesis of homoallyl ethers and homoallyl acetates from aldehydes catalyzed by bismuth triflate

[reaction: see text] Three one-pot methods for the conversion of aldehydes to homoallyl ethers catalyzed by Bi(OTf)(3).xH(2)O (1 < x < 4) have been developed. The one-pot synthesis of homoallyl ethers can be achieved either by in situ generation of the acetal followed by its reaction with allyltrialkylsilane or by a three-component synthesis in which the aldehyde, trimethylorthoformate or an alkoxytrimethylsilane and allyltrimethylsilane are mixed together in the presence of bismuth triflate (0.1-1.0 mol %). In addition, a three-component synthesis of homoallyl acetates, which is achieved by reacting the aldehyde, acetic anhydride, and allyltrimethylsilane in the presence of bismuth triflate (3.0-5.0 mol %), has been developed. The use of a relatively nontoxic, easy to handle, and inexpensive catalyst adds to the versatility of these methods.     

The initiation of polymerization by organoaluminium amides

Two organoaluminium amides have been used to initiate the polymerizations of methyl methacrylate, acetaldehyde and n-butyraldehyde. Methyl methacrylate polymerized through the vinyl function to give amorphous products. The aldehydes reacted through the carbonyl group at low temperatures with high degrees of stereospecificity to give polymers with substantial crystallinity. The molecular weight of the polyacetaldehyde is very high.     

Ξ Resonances in Ξ− Be interactions II. Properties of Ξ(1820) and Ξ(1960) in the\Lambda \bar K^0 and\Sigma ^0 \bar K^0 channels

In an experiment at the CERN-SPS charged hyperon beam, we have investigated the inclusive \(\Lambda \bar K^0 \) and \(\Sigma ^0 \bar K^0 \) final states formed in Ξ^? Be interactions. In the \(\Lambda \bar K^0 \) channel, we observe a signal at 1826 MeV/c² which can be identified with the known Ξ(1820) resonance. We determine its mass and width to be:M=1826±4 MeV/c², Г=12±14 MeV/c². A moment analysis is consistent with a spin of 3/2 and indicates a negative parity for this spin assignment. Also in the \(\Lambda \bar K^0 \) channel, we observe a 3.6σ signal with the following parameters:M=1963±5 MeV/c², Г=25±15 MeV/c². This state, which we call Ξ(1960), is not observed in the \(\Sigma ^0 \bar K^0 \) channel, leading to an upper limit on the ratio of partial widths \(\Sigma \bar K/\Lambda \bar K\) of 2.3 (90% confidence level). A moment analysis of the \(\Lambda \bar K^0 \) final state indicates a spin of 5/2 or greater in the natural spin-parity series 5/2⁺, 7/2^?, etc.     

Millimeter and submillimeter detection using Ga1?xAlxAs/GaAs heterostructures

We have shown that a Ga_1–xAl_xAs/GaAs heterostructure can be used as a sensitive tunable detector of mm-wave/sub-mm-wave radiation. The mechanism for detection requires the application of a magnetic field varying from approximately 0.2T at 94GHz (3.2mm wavelength) to 6.2T at 2500GHz (119m wavelength). The responsivity and N.E.P. at 3.2mm have been roughly estimated at 200V/W and 5×10^–11W/Hz respectively. The speed of such a detector could be several orders of magnitude greater than comparable InSb detectors.