Comparison of catalytic activities for photocatalytic and sonocatalytic degradation of methylene blue in present of anatase TiO2-CNT catalysts

Anatase TiO(2)-CNT catalysts with high specific surface areas were prepared by depositing TiO(2) particles on the surface of carbon nanotubes (CNTs) using a modified sol-gel technique. These catalysts prepared with different amounts of CNTs were characterized by nitrogen adsorption, Fourier Transform infrared (FT-IR) spectroscopy, scanning electron microscope (SEM), Transmission Electron Microscope (TEM), X-ray diffraction (XRD), Raman spectroscopy, energy dispersive X-ray (EDX) and ultraviolet-visible (UV-Vis) spectroscopy. The catalytic activity of the anatase TiO(2)-CNT catalysts was assessed by examining the degradation of methylene blue (MB) from model aqueous solutions as a probe reaction under visible light and ultrasonic irradiation. The synergistic effect of the greater surface area and catalytic activities of the composite catalysts was examined in terms of the strong adsorption ability and interphase interaction by comparing the different amounts and roles of CNTs in the catalysts.     

Tunable nonlinear absorption of hydrogenated nanocrystalline silicon

Nonlinear absorption (NLA) of hydrogenated nanocrystalline silicon (nc-Si:H) has been investigated through the open aperture Z-scan method for the photon energy of the incident irradiance slightly less than the bandgap of the sample. NLA responses have been observed to be highly sensitive to the wavelength and intensity of the incident irradiance as well as to the bandgap of the sample, indicating greatly tunable NLA of nc-Si:H. The band tail of nc-Si:H appears to play a crucial role in such NLA responses.     

Charge-orbital density wave and superconductivity in the strong spin-orbit coupled IrTe2:Pd

Using transmission electron microscopy, the anomalies in resistivity and magnetic susceptibility at ~262 K in IrTe2 are found to accompany the superlattice peaks with q[over q=(1/5,0,-1/5). The wave vector is consistent with our theoretical calculation for the Fermi surface nesting vector, indicating that the ~262 K transition is of the charge-orbital density wave (DW) type. We also discovered that both Pd intercalation and substitution induce bulk superconductivity with T(c) up to ~3 K, which competes with DW in a quantum critical pointlike manner.     

Electric field control of nonvolatile four-state magnetization at room temperature

We find the realization of large converse magnetoelectric (ME) effects at room temperature in a magnetoelectric hexaferrite Ba0.52Sr2.48Co2Fe24O41 single crystal, in which rapid change of electric polarization in low magnetic fields (about 5 mT) is coined to a large ME susceptibility of 3200 ps/m. The modulation of magnetization then reaches up to 0.62μ(B)/f.u. in an electric field of 1.14 MV/m. We find further that four ME states induced by different ME poling exhibit unique, nonvolatile magnetization versus electric field curves, which can be approximately described by an effective free energy with a distinct set of ME coefficients.     

Physical and electrical properties of band-engineered SiO2/(TiO2) x (SiO2)1−x stacks for nonvolatile memory applications

In our study, the physical properties of (TiO₂) _x (SiO₂)_1?x , including band-gap, band-offset, and thermal stability and the electrical properties of band-engineered SiO₂/(TiO₂) _x (SiO₂)_1?x tunnel barrier stacks, including the tunneling current and charge-trapping characteristics for applications to nonvolatile memory devices were investigated. It was observed that the band-gap and band-offset of (TiO₂) _x (SiO₂)_1?x can be controlled by adjustment in the composition of the (TiO₂) _x (SiO₂)_1?x films. Ti-silicate film with TiO₂:SiO₂ cycle ratio of 1:5 was maintained in an amorphous phase, even after annealing at 950 °C. The tunneling current of the band-engineered SiO₂/(TiO₂) _x (SiO₂)_1?x stacked tunnel barrier was larger than that of a single SiO₂ barrier under a higher external bias, while the tunneling current of a SiO₂/(TiO₂) _x (SiO₂)_1?x stacked tunnel barrier under a lower external bias was smaller. Charge-trapping tests showed that the voltage shift for SiO₂/(TiO₂) _x (SiO₂)_1?x is slightly larger than that for single SiO₂.     

Structural studies of AgSbTe2 under pressure: Experimental and theoretical analyses

The crystal structure of AgSbTe₂ has been refined using first-principles calculations, from which the ordering of the cations, Ag and Sb, was confirmed. The spontaneous formation of two (D4 and L1₁) phases at ambient and elevated pressure was demonstrated theoretically. The compound was also prepared and its high-pressure structural deformation sequence, ranging from ambient to 50.9 GPa, was observed with synchrotron radiation at room temperature. The compound underwent a pressure-induced amorphization (PIA) at 24.6 GPa and then started recrystallizing at 49.2 GPa. The bulk modulus (B₀) and pressure derivative of the bulk modulus (B_p) were determined experimentally to be 56.3 ± 5.1 GPa and 4.3 ± 0.8, respectively. We suggest that large displacements of Te atoms to Ag vacancy positions are responsible for PIA and the recrystallization.