Bimodal fission in binary and ternary spontaneous fission of 252Cf

The hot bimodal fission of ²⁵²Cf is reexamined with new high-statistics data. We constructed a γ-γ-γ coincidence cube for binary fission and LCP-gated γ-γ matrix for ternary fission. By identifying the secondary fission fragments from their γ-ray transitions, we measured the yields for various fission splits. The normal neutron yield distribution is found to be Gaussian for Xe-Ru. However, the binary fission split of Ba-Mo is found to exhibit a bimodal neutron distribution with the “hot mode” corresponding to ≈3.1% of the total yield. In α ternary fission, the first measurements of yields for specific fission splits are presented. The Te-α-Ru and Xe-α-Mo neutron yields fit well with a single mode, but the Ba-α-Zr split shows evidence for an enhanced hot mode with an intensity of ≈13.8% of the normal mode. The text was submitted by the authors in English.     

Collective bands in 104,106,108Mo

We have used our analysis of γ-γ-γ data (5.7 × 10¹¹ triples and higher folds) taken with Gammasphere from prompt γ rays emitted in the spontaneous fission of ²⁵²Cf to study the collective bands in ^104,106,108Mo. The one-phonon and two-phonon γ-vibrational bands and known two-quasiparticle bands in neutron-rich ^104,106Mo were extended to higher spins. The one-and two-phonon γ-vibrational bands have remarkably close energies for transitions from the same spin states and identical moments of inertia. Several new bands are observed and are proposed as quasiparticle bands in ^104,106Mo, along with the first β-type vibrational band in ¹⁰⁶Mo. The quasiparticle bands have essentially constant moments of inertia near the rigid-body value that indicate blocking of the pairing interaction. Candidates for chiral doublet bands in ¹⁰⁶Mo are strong. These are the first reported chiral vibrational bands in an even-even nucleus. The text was submitted by the authors in English.     

Quantum wire heterostructure for optoelectronic applications

Quantum wire (QWR) heterostructures suitable for optoelectronic applications should meet a number of requirements, including defect free interfaces, large subband separation, long carrier lifetime, efficient carrier capture. The structural and opticl properties of GaAs/AlGaAs and InGaAs/GaAs quantum wire (QWR) heterostructures grown by organometallic chemical vapor deposition on nonplanr substrates, which satisfy many of these criteria, are described. These crescent-shaped QWRs are formed in situ during epitaxial growth resulting in virtually defect free interfaces. Effective wire widths as small as 10nm have been achieved, corresponding to electron subband separations greater than K_BT at room temperature. The enhanced density of states at the QWR subbands manifests itself in higher optical absorption and emission as visualized in photoluminescence (PL), PL excitation, amplified spontaneous emission and lasing spectra of these structures. Effective carrier capture into the wires via connected quantum well regions, which is important for enhancing the otherwise extremely small capture cross section of these wires, has also been observed. Room temperature operation of GaAs/AlGaAs and strained InGaAs/GaAs QWR lasers with threshold currents as low as 0.6mA has been demonstrated.     

Photoemission studies of oxygen adsorbed on a LiAl(1 1 0) alloy surface: Role of Li segregation

We investigated that the effect of the number of segregated Li atoms on the rate of oxidation on a LiAl alloy surface. Oxygen molecules adsorbed on the LiAl alloy react with the surface atoms to form stable oxides. The segregated Li atoms at reconstructed surfaces (c(2×2) and (2×1)) enhance the oxidation rate and form stable LiAlO_x and Li₂O. The degree of enhancement of oxidation by segregated Li atoms varies as a function of O₂ exposure and annealing temperature, where the latter is directly related to the mode of surface reconstruction by Li segregation.     

Magnetic,structural and electrical properties of ordered and disordered Co50Fe50 films

Co₅₀Fe₅₀ films with thickness varying from 100 to 500 Å were deposited on a glass substrate by sputtering process, respectively. Two kinds of CoFe films were studied: one was the as-deposited film, and the other the annealed film. The annealing procedure was to keep the films at 400 °C for 5 h in a vacuum of 5×10⁻⁶ mbar. From the X-ray study, we find that the as-deposited film prefers the CoFe(1 1 0) orientation. Moreover, the body-centered cubic (bcc) CoFe(1 1 0) line is split into two peaks: one corresponding to the ordered body-centered tetragonal (bct) phase, and the other, the disordered bcc phase. After annealing, the peak intensity of the ordered bct phase becomes much stronger, while that of the disordered bcc phase disappears. The annealing has also caused the ordered CoFe(2 0 0) line to appear. When the amount of the ordered bct phase in Co₅₀Fe₅₀ is increased, the saturation magnetization (M_s) and coercivity (H_c) become larger, but the electrical resistivity (ρ) decreases. From the temperature coefficient of resistance (TCR) measurement, we learn that the bct grains in the CoFe film start to grow at temperature 82 °C.     

Study of alkyl chain length dependent characteristics of imidazolium based ionic liquids [CnMIM]+[TFSA]− by Brillouin and dielectric loss spectroscopy

This study examined the acoustic phonon mode of ionic liquids consisting of 1-alkyl-3-methyl-imidazolium family (C_nMIM) cations with n values ranging from 2 to 10 and bis(trifluoromethylsulfonyl)amide (TFSA) anion in the temperature range from 300 K to 100 K. [C_nMIM]⁺[TFSA]^? showed depolarized (VH) components of Brillouin peaks at temperatures below the glass transition temperature when n is larger than 4. On the other hand, in the case of ionic liquids with different anions, such as [C₄MIM]⁺[BF₄]^?, [C₄MIM]⁺[PF₆]^? and [C₈MIM]⁺[BF₄]^?, the VH component of Brillouin peaks was not observed in the temperature range investigated. The dielectric loss spectra showed that the temperature dependence of alkyl chain domain relaxation of all ionic liquids followed the Arrhenius law and showed an increase in activation energy at the temperature where the VH component of Brillouin peak appeared. These results suggest that the observed depolarized component of Brillouin peak might originate from uniquely induced polarization in the 2nd domain composed of head groups of cations and anions.     

High-power 2.8 W blue-violet laser diode for white light sources

High-power 2.8 W blue-violet InGaN LD was fabricated, applying AlN facet coating technology. The AlN was found to be crystallized on the facets and very stable even after 2200 h cw operation. Luminous flux over 380 lm is obtained with a phosphor-converted LD excitation white light source using just a single laser chip at 1A operating current.     

Structural and functional stabilities of artificially designed DNA ultra-thin films grown by silica Assistance

We report the structural and functional stabilities of artificially synthesized DNA ultra-thin films. Fully covered DNA ultra-thin films on a silica substrate were fabricated by the silica-assisted growth method and those samples were then incubated in various chemicals and physical conditions. The DNA ultra-thin films showed high maintainability under those harsh conditions and these results would aid to facilitate the use of artificial DNA ultra-thin films in advanced research areas such as biophotonics and bioelectronics.