MacWilliams duality and a Gleason-type theorem on self-dual bent functions

We prove that the MacWilliams duality holds for bent functions. It enables us to derive the concept of formally self-dual Boolean functions with respect to their near weight enumerators. By using this concept, we prove the Gleason-type theorem on self-dual bent functions. As an application, we provide the total number of (self-dual) bent functions in two and four variables obtaining from formally self-dual Boolean functions.     

Metal insulator transition characteristics of macro-size single domain VO2 crystals

The metal insulator transition (MIT) characteristics of macro-size single-domain VO₂ crystal were investigated. At the MIT, the VO₂ crystal exhibited a rectangular shape hysteresis curve, a large change in resistance between the insulating and the metallic phases, in the order of ～10⁵, and a small transition width (i.e. temperature difference before and after MIT) as small as 10^?3°C. These MIT characteristics of the VO₂ crystals are discussed in terms of phase boundary motion and the possibility of controlling the speed of the phase boundary, with change in size of crystal, is suggested.     

Novel fabrication route for carbon-free and dense CuInSe2 (CIS) thin films via a non-vacuum process for solar cell application

Carbon-free CuInSe₂ (CIS) thin film with a dense microstructure has been prepared using a novel non-vacuum based fabrication route. Cu_xS_y and In₂Se₃ binary nanoparticles, approximately 10 nm in size, were synthesized by a low temperature colloidal process. The precursor film was deposited using the coating ink formulated with the binary nanoparticles and pyridine, and then annealed in the rapid thermal annealing (RTA) chamber at 540 °C for 15 min under selenium (Se) atmosphere. Scanning electron micrographs, X-ray diffraction patterns and Raman spectra showed a phase pure carbon-free and dense CIS thin film was prepared in this method. A solar cell device fabricated using this CIS thin film showed the following photovoltaic characteristics: V_OC = 350 mV, J_SC = 24.72 mA cm⁻², FF = 38.73% and η = 3.36% under standard AM 1.5 condition.     

Magnetized SPR sensor for enhanced functionality

It is known that a magnetic field changes the RI and the SPR angle of specific analytes. We have applied an external magnetic field to a surface plasmon resonance (SPR) sensor to exploit this phenomenon. A gold film is used for excitation of SPR in the sensor with a Kretschmann configuration. According to the concentration of 4-type analyte, we observed unique changes of the SPR angle due to the magnetic field, providing better classification of material type than a conventional SPR sensor.     

Generalized MacWilliams identities and their applications to perfect binary codes

We present generalized MacWilliams identities for binary codes. These identities naturally lead to the concepts of the local weight distribution of a binary code with respect to a word u and its MacWilliams u-transform. In the case that u is the all-one word, these ones correspond to the weight distribution of a binary code and its MacWilliams transform, respectively. We identify a word v with its support, and consider v as a subset of {1, 2,..., n}. For two words u,w of length n such that their intersection is the empty set, define the u-face centered at w to be the set . A connection between our MacWilliams u-transform and the weight distribution of a binary code in the u-face centered at the zero word is presented. As their applications, we also investigate the properties of a perfect binary code. For a perfect binary code C, the main results are as follows: first, it is proved that our local weight distribution of C is uniquely determined by the number of codewords of C in the orthogonal u-face centered at the zero word. Next, we give a direct proof for the known result, concerning the weight distribution of a coset of C in the u-face centered at the zero word, by A. Y. Vasil’eva without using induction. Finally, it is proved that the weight distribution of C in the orthogonal u-face centered at w is uniquely determined by the codewords of C in the u-face centered at the zero word.      

Compatibility and fungal degradation of poly[(R)-3-hydroxybutyrate]/aliphatic copolyester blend

Poly[(R)-3-hydroxybutyrate] (PHB) was blended with an aliphatic copolyester, which was synthesized by the esterification of adipic acid, ethylene glycol, and lactic acid. The blend showed a single T_g, which varied systematically but convexly upwards with the composition. The growth rate of PHB spherulites, the crystallization temperature, and the equilibrium melting temperature of the blend were decreased as the amount of the copolyester was increased. Therefore, the blend system was determined to be compatible. However, the degree of crystallinity, and the enthalpies of crystallization and fusion of PHB in the blend remained almost constant, regardless of the compositional change, although the crystallization rate was decreased upon blending. No chemical change such as transesterification was observed as a result of the blending, yet there was a slight change in the crystalline morphology of PHB. The rate of fungal degradation was lowered with an increase in the copolyester content of the blend. © 1996 John Wiley & Sons, Inc.     

A Novel Route to the Fused Maleic Anhydride Moiety of CP Molecules

A seven‐step cascade reaction —in which selective mesylation, epoxide formation, epoxide lysis, cyclization, reiterative oxidation, and nitrogen–oxygen exchange occur sequentially—facilitates the construction of the maleic anhydride moiety of CP molecules 1 and 2 (>93% yield per step). Unstable intermediates of this reaction sequence were detected, providing evidence for the proposed mechanism and resulting in the discovery of a new chemical entity.     

Electronic structure and magnetism in transition metals doped 8-hydroxy-quinoline aluminum

We report the room-temperature ferromagnetism in transition metals (Co, Ni)-doped 8-hydroxy-quinoline aluminum (Alq3) by thermal coevaporation of high purity metal and Alq3 powders. For 5% Co-doped Alq3, a maximum magnetization of approximately 0.33 microB/Co at 10 K was obtained and ferromagnetic behavior was observed up to 300 K. The Co atoms interact chemically with O atoms and provide electrons to Alq3, forming new states acting as electron trap sites. From this, it is suggested that ferromagnetism may be associated with the strong chemical interaction of Co atoms and Alq3 molecules.     

Synthesis and Structure–Activity Relationship Studies of Benzimidazole-4,7-dione-Based P2X3 Receptor Antagonists as Novel Anti-Nociceptive Agents

P2X3 receptors (P2X3R) are ATP-gated ion channels predominantly expressed in C- and Aδ-fiber primary afferent neurons and have been introduced as a novel therapeutic target for neurological disorders, including neuropathic pain and chronic cough. Because of its localized distribution, antagonism of P2X3R has been thoroughly considered, and the avoidance of issues related to CNS side effects has been proven in clinical trials. In this article, benzimidazole-4,7-dione-based derivatives were introduced as a new chemical entity for the development of P2X3R antagonists. Starting from the discovery of a hit compound from the screening of 8364 random library compounds in the Korea Chemical Bank, which had an IC₅₀ value of 1030 nM, studies of structure–activity and structure–property relationships enabled further optimization toward improving the antagonistic activities as well as the drug’s physicochemical properties, including metabolic stability. As for the results, the final optimized compound 14h was developed with an IC₅₀ value of 375 nM at P2X3R with more than 23-fold selectivity versus P2X2/3R, along with properties of metabolic stability and improved solubility. In neuropathic pain animal models evoked by either nerve ligation or chemotherapeutics in male Sprague-Dawley rats, compound 14h showed anti-nociceptive effects through an increase in the mechanical withdrawal threshold as measured by von Frey filament following intravenous administration.     

Gate dielectric chemical structure-organic field-effect transistor performance correlations for electron, hole, and ambipolar organic semiconductors

This study describes a general approach for probing semiconductor-dielectric interfacial chemistry effects on organic field-effect transistor performance parameters using bilayer gate dielectrics. Organic semiconductors exhibiting p-/n-type or ambipolar majority charge transport are grown on six different bilayer dielectric structures consisting of various spin-coated polymers/HMDS on 300 nm SiO(2)/p(+)-Si, and are characterized by AFM, SEM, and WAXRD, followed by transistor electrical characterization. In the case of air-sensitive (generally high LUMO energy) n-type semiconductors, dielectric surface modifications induce large variations in the corresponding OTFT performance parameters although the film morphologies and microstructures remain similar. In marked contrast, the device performance of air-stable n-type and p-type semiconductors is not significantly affected by the same dielectric surface modifications. Among the bilayer dielectric structures examined, nonpolar polystyrene coatings on SiO(2) having minimal gate leakage and surface roughness significantly enhance the mobilities of overlying air-sensitive n-type semiconductors to as high as approximately 2 cm(2)/(V s) for alpha,omega-diperfluorohexylcarbonylquaterthiophene polystyrene/SiO(2). Electron trapping due to silanol and carbonyl functionalities at the semiconductor-dielectric interface is identified as the principal origin of the mobility sensitivity to the various surface chemistries in the case of n-type semiconductors having high LUMO energies. Thiophene-based n-type semiconductors exhibiting similar film morphologies and microstructures on various bilayer gate dielectrics therefore provide an incisive means to probe TFT performance parameters versus semiconductor-dielectric interface relationships.