首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   6283篇
  免费   264篇
  国内免费   35篇
化学   4389篇
晶体学   49篇
力学   248篇
数学   655篇
物理学   1241篇
  2023年   28篇
  2022年   88篇
  2021年   111篇
  2020年   121篇
  2019年   125篇
  2018年   132篇
  2017年   121篇
  2016年   260篇
  2015年   175篇
  2014年   254篇
  2013年   353篇
  2012年   491篇
  2011年   520篇
  2010年   380篇
  2009年   346篇
  2008年   491篇
  2007年   415篇
  2006年   358篇
  2005年   310篇
  2004年   262篇
  2003年   202篇
  2002年   212篇
  2001年   109篇
  2000年   116篇
  1999年   79篇
  1998年   59篇
  1997年   47篇
  1996年   49篇
  1995年   33篇
  1994年   34篇
  1993年   30篇
  1992年   22篇
  1991年   24篇
  1990年   14篇
  1989年   11篇
  1988年   15篇
  1987年   14篇
  1986年   5篇
  1985年   16篇
  1984年   15篇
  1983年   13篇
  1982年   17篇
  1981年   10篇
  1980年   11篇
  1979年   8篇
  1978年   8篇
  1977年   14篇
  1976年   10篇
  1974年   11篇
  1973年   5篇
排序方式: 共有6582条查询结果,搜索用时 15 毫秒
101.
An iteration scheme is given for constructing the unique least-squares solution of minimal norm for an ordinary differential operator equation. This operator is subject to generalized two- point boundary conditions and is nondensely defined. The convergence is established in a uniform topology.  相似文献   
102.
We present a novel mode filter operating for the 1060-nm band, which selectively removes the power of the high-order mode (HOM) from a conventional single-mode fiber (C-SMF) that supports two modes at the short-wavelength band. Our mode filter is fabricated very easily by fusion-splicing a short section of short-wavelength single-mode fiber in the middle of the C-SMF link. By using our spliced-fiber mode filter (SF-MF), a high HOM suppression performance of > 18 dB has been achieved with a low insertion loss of < 0.3 dB over the full band of optical communications from 1050 nm to 1650 nm. We have also developed a new mode power measurement scheme that takes advantage of the bending sensitivity of the HOM guidance. This measurement scheme enabled us to evaluate accurately the performance factors of the fabricated mode filter.  相似文献   
103.
In this paper we improve on the monotone property of Lemma 1.7.3 in Lakshmikantham et al. (2009) [5] for the case g(t,u)=λu with a nonnegative real number λ. We also investigate the Mittag-Leffler stability of solutions of fractional differential equations by using the fractional comparison principle.  相似文献   
104.
105.
We introduce the notion of a partial geometric difference family as a variation on the classical difference family and a generalization of partial geometric difference sets. We study the relationship between partial geometric difference families and both partial geometric designs and difference families, and show that partial geometric difference families give rise to partial geometric designs. We construct several infinite families of partial geometric difference families using Galois rings and the cyclotomy of Galois fields. From these partial geometric difference families, we generate a list of infinite families of partial geometric designs and directed strongly regular graphs.  相似文献   
106.
We begin by establishing a sharp (optimal) Wloc2,2-regularity result for bounded weak solutions to a nonlinear elliptic equation with the p-Laplacian, Δpu=defdiv(|?u|p?2?u), 1<p<. We develop very precise, optimal regularity estimates on the ellipticity of this degenerate (for 2<p<) or singular (for 1<p<2) problem. We apply this regularity result to prove Pohozhaev?s identity for a weak solution uW1,p(Ω) of the elliptic Neumann problem(P)?Δpu+W(u)=f(x)in Ω;?u/?ν=0on ?Ω. Here, Ω is a bounded domain in RN whose boundary ?Ω is a C2-manifold, νν(x0) denotes the outer unit normal to ?Ω at x0?Ω, x=(x1,,xN) is a generic point in Ω, and fL(Ω)W1,1(Ω). The potential W:RR is assumed to be of class C1 and of the typical double-well shape of type W(s)=|1?|s|β|α for sR, where α,β>1 are some constants. Finally, we take an advantage of the Pohozhaev identity to show that problem (P) with f0 in Ω has no phase transition solution uW1,p(Ω) (1<p?N), such that ?1?u?1 in Ω with u?1 in Ω?1 and u1 in Ω1, where both Ω?1 and Ω1 are some nonempty subdomains of Ω. Such a scenario for u is possible only if N=1 and Ω?1, Ω1 are finite unions of suitable subintervals of the open interval Ω?R1.  相似文献   
107.
Arborescent (dendrigraft) copolymers with a branched polystyrene (PS) core grafted at the chain termini with deuterated poly(ethylene oxide) segments (PS-dPEO) were characterized in benzene and acetone by small-angle neutron scattering measurements using the contrast matching technique. While copolymers incorporating a G1 (twice-grafted) PS core aggregated to some extent, the portion of the scattering curve corresponding to non-aggregated copolymer molecules could still be analyzed to determine the shape and segment radial density profile for core and shell. These were derived from the pair distance distribution function P(r) and the scattering length density contrast profile Δρ(r) = ρ(r) ? ρ(solvent), obtained by the indirect Fourier transformation and deconvolution methods. The profiles obtained for the G1 copolymer are consistent with a well-defined PS core–dPEO shell morphology, only observed previously for upper generation (G4) polymers with deuterated PS (dPS) chains grafted randomly on arborescent PS substrates. Detailed morphological analysis could not be carried out for an analogous G3 arborescent PS copolymer terminally grafted with dPEO segments due to extensive aggregation in both solvents.  相似文献   
108.
Let G(n, k) denote the graph of the Johnson Scheme J(n, k), i.e., the graph whose vertices are all k-subsets of a fixed n-set, with two vertices adjacent if and only if their intersection is of size k ? 1. It is known that G(n, k) is a distance regular graph with diameter k. Much work has been devoted to the question of whether a distance regular graph with the parameters of G(n, k) must isomorphic to G(n, k). In this paper, this question is settled affirmatively for n ≥ 20. In fact the result is proved with weaker conditions.  相似文献   
109.
The Hydrogenated silicon nitride (SiNx:H) using plasma enhanced chemical vapor deposition is widely used in photovoltaic industry as an antireflection coating and passivation layer. In the high temperature firing process, the SiNx:H film should not change the properties for its use as high quality surface layer in crystalline silicon solar cells. For optimizing surface layer in crystalline silicon solar cells, by varying gas mixture ratios (SiH4 + NH3 + N2, SiH4 + NH3, SiH4 + N2), the hydrogenated silicon nitride films were analyzed for its antireflection and surface passivation (electrical and chemical) properties. The film deposited with the gas mixture of SiH4 + NH3 + N2 showed the best properties in before and after firing process conditions.The single crystalline silicon solar cells fabricated according to optimized gas mixture condition (SiH4 + NH3 + N2) on large area substrate of size 156 mm × 156 mm (Pseudo square) was found to have the conversion efficiency as high as 17.2%. The reason for the high efficiency using SiH4 + NH3 + N2 is because of the good optical transmittance and passivation properties. Optimized hydrogenated silicon nitride surface layer and high efficiency crystalline silicon solar cells fabrication sequence has also been explained in this study.  相似文献   
110.
Suppose one is given two related generating functionsa(x) = a n x n andb(x) = b n x n , often it is of interest to determine the limiting behaviour of the quantitiesa n /b n We survey some earlier results of this nature and give some new ones  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号