The separation of hypericin's enantiomers and their photophysics in chiral environments

We report the first separation of the enantiomers of hypericin. Their steady-state optical spectra and ultrafast primary photoprocesses are investigated in chiral environments. Within experimental error, there is no difference between the two enantiomers in any of the systems considered. This is consistent with the emerging picture that the rich and extended absorption spectrum of hypericin is not a result of ground-state heterogeneity. It is also consistent with the observation that the spectra and photophysics of hypericin are generally insensitive to environments in which it does not aggregate.     

Synthesis of N-Alkoxy Amidine Salts Via Addition of (N-Alkyl-N-Alkoxyammine)Dimethylaluminum Chlorides to Nitriles

Abstract: The addition of (N-alkyl-N-alkoxyammine)dimethylaluminum chlorides to nitriles provides a convenient route to little investigated N-alkoxy amidine hydrochlorides. A survey of the scope of this reaction is presented.     

Double percolation effect on the electrical conductivity of conductive particles filled polymer blends

Electrical conductivity of carbon black (CB) filled polymer blends which are incompatible with each other was studied as a function of the polymer's blend ratio. Transmission electron microscope (TEM) analysis shows that CB distributes unevenly in each component of a polymer blend. TEM photographs of phase structure of solvent extracted HDPE/PMMA blend and solvent extraction experiments of PMMA/PP blend detect the blend ratio at which the structural continuity of filler rich phase is formed. The electrical conductivity of polymer blends is found to be determined by two factors. One is the concentration of CB in the filler rich phase and the other is the structural continuity of this phase. This double percolation affects the conductivity of conductive particle filled polymer blends.     

The reactions of beta- and alpha-pyranose peracetates with PCl5, and utilization of the products to construct sarsasapogenin glycosides.

The reactions of beta- and alpha-pyranose peracetates with PCl5 gave products regioselectively chlorinated. The reactions of 1,2,3,4,6-penta-O-acetyl-beta-D-glucopyranose (5) and -beta-D-galactopyranose (6) with PCl5 in CCl4 and that of methyl 2,3,4-tri-O-acetyl-beta-D-glucuronatopyranose (7) with PCl5 in toluene gave 2-O-trichloroacetyl-beta-D-pyranosyl chlorides 4, 12 and 14, respectively, as major products, and alpha-D-pyranosyl chlorides 11, 13 and 15, respectively, as minor products. On the other hand, the reactions of compounds 8 and 9 which were alpha-anomers of 5 and 6, respectively, with PCl5 gave as major products transformed acetyl groups at C-6 to -C(Cl) = CCl2 or -C(Cl)2-CCl3 group (16 and 17 from 8 and 18 from 9). The same reaction of 10, which was alpha-anomer of 7, gave alpha-chloride 15 as a major product. The glycosidation of sugar derivative 4 with sarsasapogenin 23 gave beta-glycoside 24 (29.1%) and alpha-glycoside 25 (46.9%), and that of 12 with 23 gave beta-glycoside 26 (24.0%) and alpha-glycoside 27 (40.8%). The improvement of the yields of beta-glycosides 24 and 26 (66.9 and 62.1% for 24 and 26, respectively) in the glycosidations were accomplished by the employment of alpha-bromides 28 and 29 obtained from 4 and 6, respectively. The glycosidations of monoglycosides 30 and 31 obtained by the treatment 24 and 26, respectively, with ammonia-saturated ether with sugar acetate bromides 32 and 34 gave diglycoside derivatives 35 and 33, respectively.     

X-ray topography, photopyroelectric and two-photon absorption studies on solution grown benzimidazole single crystal

Benzimidazole (BMZ) is an organic nonlinear optical material, and it is possible to grow it in the laboratory by a slow evaporation solution growth technique using methanol as the solvent. Its nonlinear optical harmonic generation efficiency is 4.5 times higher than that of standard potassium dihydrogen phosphate (KDP) single crystal. It crystallizes with orthorhombic structure, which is noncentrosymmetric in nature, with lattice parameters a=13.58 Å, b=6.85 Å, c=6.97 Å. The functional groups of the grown specimen are confirmed by heteronuclear chemical shift correlation (HETCOR) analysis and it is found that other elements are not incorporated in the compound. The crystalline perfection is examined by high resolution X-ray diffraction (HRXRD), and its topographic image was recorded for the as-grown single crystal indicates the presence of some grain boundaries in the grown specimen. Thermal parameters such as thermal diffusivity (α), thermal conductivity (k), thermal effusivity (e), and heat capacity (c _p ) have been determined by a photopyroelectric thermal wave method. In addition, piezoelectricity, birefringence, and third-order nonlinear optical properties have been examined. The two-photon absorption coefficient of the title compound is determined by the open-aperture Z-scan technique.     

Stacking of multilayer InAs quantum dots with combination capping of InAlGaAs and high temperature grown GaAs

We are reporting the growth of multilayer stacks of quantum dots (10 periods) with a combination capping of In_0.21Al_0.21Ga_0.58As (30 Å) and GaAs (70–180 Å) grown by solid source molecular beam epitaxy (MBE). Reflection high energy electron diffraction (RHEED) has been used for the insitu monitoring of quantum dot (QD) formation in heterostructure samples. The samples were also characterized by other exsitu techniques like cross sectional transmission electron microscopy (XTEM) and photoluminescence measurements (PL). For a heterostructure sample with thin barrier thickness (<100 Å), an XTEM image showed the stacking of QDs only up to the 5th layer and in the upper layers there was hardly any formation of dots. We presume the stoppage of dot formation is due to the uneven surface of the InAlGaAs alloy overgrown on the InAs QDs, as a result of the local compositional deviations of the Group-III atoms. Samples grown with thicker barriers (>100 Å of GaAs) showed good stacking of islands until the tenth layer. The thick GaAs layer overgrown on the InAlGaAs at 590 ^°C is believed to remove the surface modifications of the quaternary layer thereby creating a smoother surface front for the growth of subsequent QD layers.