Longitudinal relaxation of muonium in Ge and GaAs

Longitudinal-field muon-spin depolarization rates in high-purityGe and semiinsulatingGaAs are reported and compared to similar data for intrinsicSi. Depolarization onset temperatures provide a comparison of charge carrier concentrations leading to rapid charge exchange and a shift in the onset, for n-typeGaAs verifies anelectron process. The temperature dependence of the low-field rate constants imply more complicated dynamics inGe than observed earlier inSi. Features near 750K inGaAsTe appear consistent with dissociation of aMu-Te pair.This work was supported by the US National Science Foundation (DMR-8917639 [TLE, BH]), the Science and Engineering Research Council of the UK (EAD, AS, SFJC), the Robert A. Welch Foundation (D-1053 [RLL], and C-1048 [TLE]), and a NATO Collaborative Research Grant (RLL, SFJC, RCD, CS). We wish to thank D.A. Vanderwater of Hewlett Packard for providing theGaAsTe sample.     

Production of helium fragments in197Au-emulsion collisions at 10.6 A GeV

We present a systematic analysis on the helium projectile fragments produced from 10.6 A GeV¹⁹⁷Auemulsion interactions in an experiment conducted at the Brookhaven AGS. Total charge changing and partial production cross-sections are measured experimentally on the basis of helium multiplicity. The multiplicity distribution of helium fragments which are produced collectively obey a KNO scaling. The transverse momentum distribution of these particles indicates that they are produced from two different independent sources.We are thankful to the BNL technical staff and specially to Dr. D. Beavis for his help in the exposure of emulsion stacks. Thanks are due to Profs. Y. Takahashi and G. Romano for their help in the preparation and development of the emulsion stacks. We appreciate the discussions with Prof. H. Stocker and J. Aichelin. This work was supported by D.O.E. under Grant No. DE-FGO2-90ER 40566.     

Anisotropic<Emphasis Type="Italic">s</Emphasis>-wave or<Emphasis Type="Italic">d</Emphasis>-wave pairing? Analysis of experiments on ion irradiation of YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>7-x</Subscript> films

The effect of ion irradiation on the superconducting transition temperatureT _c and resistivityρ _ab (T) of YBa₂Cu₃O_7-x films with different oxygen content (initial temperatureT _c0≈90 K and 60 K) is studied experimentally. The dependenciesT _c /T _c0 on residual resistivityρ _o are obtained in very wide range 0.2<T _c /T _c0 <1 andρ _o μΩ·cm. The critical values ofρ _o , corresponding to the vanishing of superconductivity, are found to be an order of magnitude larger then those predicted by theory ford-wave pairing. At 0.5÷0.6<T _c /T _c0<1 the experimental data are in close agreement with theoretical dependencies, obtained for the anisotropics-wave superconductor within the BCS-framework.     

Investigations of the interlayer coupling in high-<Emphasis Type="Italic">T</Emphasis><Subscript><Emphasis Type="Italic">c</Emphasis></Subscript> cuprates

Low-field magnetizationM(H) measurements can be used to probe the nature of the screening currents and the interlayer coupling in high-T _c cuprates. Here we compare theM(H) behaviour of single crystals of Bi₂Sr₂CaCu₂O₈ and fully oxygenated and oxygen reduced YBa₂Cu₃O_7??. In YBa₂Cu₃O₇, theM(H) behaviour is consistent with anisotropic 3D superconductivity whilst in Bi₂Sr₂CaCu₂O₈, the surface screening currents are strongly affected by the presence of vortices, implying that the CuO₂ planes are coupled via a weak Josephson interaction. In oxygen-deficient YBa₂Cu₃O_6.7 (T _c =63K), theM(H) behaviour at low temperatures is similar to that found for Bi₂Sr₂CaCu₂O₈, implying that the removal of oxygen from the chains has resulted in a dimensional crossover of the superconducting state in YBa₂Cu₃O_7??. As the temperature approachesT _c , the 3D behaviour is eventually restored as thec-axis coherence length ξ _c becomes comparable with the interlayer spacingd.     

Transport studies in boron-ion implanted type II<Emphasis Type="Italic">a</Emphasis> diamond

We have investigated low-temperature electrical transport mechanisms in the surface layer of a type IIa diamond which has been heavily implanted with boron-ions at low temperatures and then annealed at high temperatures. The boron atoms occupy substitutional sites giving rise to a heavily doped wide-bandgap semiconductor. The dc-conductivity results suggest that for the maximum boron doping that has been achieved, the diamond sample is close to the insulator-metal transition. A model to account for the observed increase in activated boron centres with ion dose is presented. On the insulating side of the transition, the data are interpreted in terms of variable-range hopping laws.     

Magnetic structure of graphite ribbon

Anoble mechanism of spin polarization is proposed for finite graphite sheet with edge. For graphite ribbon with zigzag edge, there appear peculiar ‘edge states’. These localized states comprise nearly flat band at the Fermi level, which easily causes magnetic instability. Magnetic structure is suggested from Hartree-Fock analysis of the Hubbard model, where huge magnetic moments are induced at around both of edges by weak HubbardU and are coupled antiferromagnetically with each other.