High-density plasma etching of indium-zinc oxide films in Ar/Cl2 and Ar/CH4/H2 chemistries

The dry etching characteristics of transparent and conductive indium-zinc oxide (IZO) films have been investigated using an inductively coupled high-density plasma. While the Cl₂-based plasma mixture showed little enhancement over physical sputtering in a pure argon atmosphere, the CH₄/H₂/Ar chemistry produced an increase of the IZO etch rate. On the other hand, the surface morphology of IZO films after etching in Ar and Ar/Cl₂ discharges is smooth, whereas that after etching in CH₄/H₂/Ar presents particle-like features resulting from the preferential desorption of In- and O-containing products. Etching in CH₄/H₂/Ar also produces formation of a Zn-rich surface layer, whose thickness (∼40 nm) is well-above the expected range of incident ions in the material (∼1 nm). Such alteration of the IZO layer after etching in CH₄/H₂/Ar plasmas is expected to have a significant impact on the transparent electrode properties in optoelectronic device fabrication.     

新疆野生黑加仑与马林果实的营养成分分析

通过对新疆野生黑加仑和野生马林的脂肪油，8种微量元素，17种氨基酸以及维生素C的含量进行测定得出：黑加仑脂肪油含量为17．9％，马林的脂肪油含量为22．3％，其中，黑加仑脂肪油中，r－亚麻酸的含量为19．02％，而马林中，其含量为9．40％，黑加仑中K，Na,Ca,Cu,Zn,Fe的含量比马林中的含量高，而Mn,Mg元素的含量却比马林含量低；马林的维生素C含量为16．22mg/g，黑加仑的含量为108mg/g，黑加仑的氨基酸的总量为1．63％，马林为1．14％。     

Temperature effect on deposition rate of silicon nitride films

Temperature effects on deposition rate of silicon nitride films were characterized by building a neural network prediction model. The silicon nitride films were deposited by using a plasma enhanced chemical vapor deposition system and process parameter effects were systematically characterized by 2⁶⁻¹ fractional factorial experiment. The process parameters involved include a radio frequency power, pressure, temperature, SiH₄, N₂, and NH₃ flow rates. The prediction performance of generalized regression neural network was drastically improved by optimizing multi-valued training factors using a genetic algorithm. Several 3D plots were generated to investigate parameter effects at various temperatures. Predicted variations were experimentally validated. The temperature effect on the deposition rate was a complex function of parameters but N₂ flow rate. Larger decreases in the deposition rate with the temperature were only noticed at lower SiH₄ (or higher NH₃) flow rates. Typical effects of SiH₄ or NH₃ flow rate were only observed at higher or lower temperatures. A comparison with the refractive index model facilitated a selective choice of either SiH₄ or NH₃ for process optimization.     

An efficient construction of period-2 bulbs in the cubic Mandelbrot set with parametric boundaries

A parametric boundary equation is established for the principal period-2 bulb in the cubic Mandelbrot set. Using its geometry, an efficient escape-time algorithm which reduces the construction time for the period-2 bulbs in the cubic Mandelbrot set is introduced and the implementation graphic results display the fascinating fractal beauty     

Effects of in situ thermal annealing on the structural, optical, and electrical properties in Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers

Scanning electron microscopy (SEM), Fourier transform infrared (FTIR) transmission, and Hall effect measurements were performed to investigate the structural, optical, and electrical properties of as-grown and in situ-annealed Hg_0.7Cd_0.3Te epilayers grown on CdTe buffer layers by using molecular beam epitaxy. After the Hg_0.7Cd_0.3Te epilayers had been annealed in a Hg-cell flux atmosphere, the SEM images showed that the surface morphologies of the Hg_0.7Cd_0.3Te thin films were mirror-like with no indication of pinholes or defects, and the FTIR spectra showed that the transmission intensities had increased in comparison to that of the as-grown Hg_0.7Cd_0.3Te epilayer. Hall-effect measurements showed that n-Hg_0.7Cd_0.3Te epilayers were converted to p-Hg_0.7Cd_0.3Te epilayers. These results indicate that the surface, optical, and electrical properties of the Hg_1 − xCd_xTe epilayers are improved by annealing and that as-grown n-Hg_1 − xCd_xTe epilayers can be converted to p-Hg_1 − xCd_xTe epilayers by in situ annealing.     

Current distribution and giant magnetoimpedance in composite wires with helical magnetic anisotropy

The giant magnetoimpedance effect in composite wires consisting of a non-magnetic inner core and soft magnetic shell is studied theoretically. It is assumed that the magnetic shell has a helical anisotropy. The current and field distributions in the composite wire are found by means of a simultaneous solution of Maxwell equations and the Landau–Lifshitz equation. The expressions for the diagonal and off-diagonal impedance are obtained for low and high frequencies. The dependences of the impedance on the anisotropy axis angle and the shell thickness are analyzed. Maximum field sensitivity is shown to correspond to the case of the circular anisotropy in the magnetic shell. It is demonstrated that the optimum shell thickness to obtain maximum impedance ratio is equal to the effective skin depth in the magnetic material.     

Electrical and magnetic properties of CoFeAlO thin films

Influences of oxygen-partial pressure and annealing on the electrical and magnetic properties of CoFeAlO thin films were systematically investigated by means of resistivity, permeability, magnetization and ferromagnetic resonance (FMR) measurements. It was found that, with increasing oxygen-partial pressure or under annealing, the electrical resistivity of the film increased and the magnetic softness decreased, which is attributed to the microstructural change of the film. Interestingly, an as-deposited Co_45.30Fe_20.65Al_19.34O_14.71 film was found to exhibit an inverted hysteresis loop with negative coercivity, and this peculiar phenomenon disappeared upon effects of oxygen-partial pressure and annealing. It was also found that the as-deposited films owned a narrow FMR line width that increased with increasing oxygen-partial pressure or under annealing.     

Enhanced ferromagnetic properties of diluted Fe doped ZnO with hydrogen treatment

The single-phase diluted magnetic Fe-ion (5%) doped ZnO powders were prepared by solid-state reaction method. The powders were annealed in Ar or Ar/H₂(5%) atmosphere at 1200 °C. The crystal structure, electric and magnetic properties for the Zn_0.95Fe_0.05O powders have been studied with X-ray diffraction (XRD) vibrating sample magnetometer, resistance and Hall measurement. All the peaks for the XRD pattern of samples belong to the hexagonal (P6₃mc) lattice of ZnO, and no indication of a secondary phase. The lattice parameters for the Zn_0.95Fe_0.05O with an annealing in Ar/H₂(5%) atmosphere were a₀=3.256 Å and c₀=5.206 Å at room temperature. The hysteresis curve for the Zn_0.95Fe_0.05O at room temperature was enhanced ferromagnetic behaviour with an annealing in Ar/H₂(5%) atmosphere. We give an explanation for enhanced ferromagnetic behaviour with H₂ treatment by electric properties.     

Laser-sintered mesoporous TiO2 electrodes for dye-sensitized solar cells

Low-temperature laser sintering has been successfully demonstrated to improve the overall conversion efficiency of dye-sensitized solar cells. Mesoporous TiO₂ electrodes were prepared from a colloidal solution of TiO₂ nanopowders by a laser direct-write technique and then sintered by a quasi-continuous-wave UV laser (λ=355 nm) for the fabrication of dye-sensitized solar cells. The overall conversion efficiency of the cells based on the laser-sintered TiO₂ electrodes was double that of the devices with non-laser-treated TiO₂ electrodes. This enhancement is attributed to both the removal of organic additives and the improved inter-nanoparticle electrical contacts induced by the laser-sintering process, which led to an increase in porosity and dye-absorption sites in the TiO₂ electrodes. PACS 61.80.Ba; 61.46.+w; 73.22.-f; 84.60.Jt     

High-frequency characteristics of CoFeVAlONb thin films

High-frequency characteristics of CoFeVAlONb thin films were studied. A thin film of Co_43.47Fe_35.30V_1.54Al_5.55O_9.93Nb_4.21 is observed to exhibit excellent magnetic properties; magnetic coercivity of 1.24 Oe, uniaxial in-plane anisotropy field of 66.99 Oe, and saturation magnetization of 19.8 kG. The effective permeability of the film is as high as 1089 and is stable up to 1.8 GHz, and with ferromagnetic resonance over 3 GHz. This film also has very high electrical resistivity of about 628 μΩ cm. These superior properties make it ideal for high-frequency magnetic applications.