Controllable synthesis of ZnS/PMMA nanocomposite hybrids generated from functionalized ZnS quantum dots nanocrystals

We reported controllable synthesis of ZnS nanocrystal-polymer transparent hybrids by using polymethylmethacrylate (PMMA) as a polymer matrix. In a typical run, the appropriate amounts of zinc chloride (ZnCl₂) and sodium sulfide (Na₂S) in the presence of 2-mercaptoethanol (ME) as the organic ligand were well dispersed in H₂O/dimethylformamide solution without any aggregation. In addition, the Mn-doped ZnS nanocrystals (NCs) were synthesized with similar method. Then, ZnS-PMMA hybrids were obtained via free radical polymerization in situ by using ZnS NCs functionalized with methacryloxypropyltrimethoxysilane (MPS). FT-IR characterization indicates the formation of robust bonding between ZnS NCs and the organic ligand. The TEM images show that ZnS NCs are well dispersed in PMMA matrix, and particle size of as-prepared ZnS NCs is about 2.6 nm, in agreement with the computing results of Brus’s model and Debye–Scherrer formula. The photoluminescence measurements present that ZnS NCs, Mn-doped ZnS NCs, and ZnS/PMMA hybrid show good optical properties.     

早期火灾图像监测技术的应用与比较

本文对可提供图像信息的火灾物理现象进行了具体分析，讨论了利用摄像技术进行早期火灾探测的可能性、使用条件以及图像监测技术在火灾探测中的地位和作用，进行了若干种图像监测技术的对比实验，得出了相应的结论。     

对于叶轮机气动弹性力学一个基本假设的讨论

“在一个叶片排中叶片间相角为常数”是叶轮机气动弹性力学至今沿用的基本假设。但事实表明,当颤振发作时,叶片排中各叶片不仅动应力不同,而且叶片间相角亦非常数。解除了此基本假设的约束之后,本文发展了一种新的模型和计算方法。计算结果与实验数据对比表明,当气动弹性失稳时,叶片排中诸叶片动应力之所以不相等,叶片间相角并非常数是一个主要原因。     

D→Klv～l衰变过程的研究

用光锥QCD求和规则研究D→Klv～_l衰变过程，首先计算D→K跃迁形状因子，通过构造新的关联函数，消除了twist-3波函数的不确定性给计算结果所带来的影响，从而使计算结果更加精确. 计算得到的分支比与最近的实验数据相一致. 关键词： QCD光锥求和规则 D介子半轻衰变 分支比 形状因子     

Ce3+离子敏化Eu3+∶Cr3+∶Sm3+∶YAG外延层的荧光现象

对Ce3+ ∶Eu3+ ∶Cr3+ ∶Sm3+ ∶YAG处延层中的荧光敏化现象进行了报道和分析 ,在较高浓度的Ce3+ 离子掺杂时 ,外延层在蓝色、绿色波段出现了新的荧光谱线 ,可解释为在Ce3+ 离子敏化作用下 ,Eu3+ 离子产生了由高位激发态能级5Di(i=1,2 ,3)直接到基态能级7Fj(j =0 ,1,2 ,3)的辐射跃迁过程 ,并且这种Ce3+ ∶Eu3+ ∶Cr3+ ∶Sm3+ ∶YAG外延层还是一种新颖的白色单晶荧光材料。     

Diffusion study of multi-organic layers in OLEDs by ToF-SIMS

A model organic light-emitting diodes (OLEDs) with structure of tris(8-hydroxyquinoline) aluminum (Alq₃)/N,N′-diphenyl-N,N′-bis[1-naphthy-(1,1′-diphenyl)]-4,4′-diamine (NPB)/indium tin oxide (ITO)-coated glass was fabricated for diffusion study by ToF-SIMS. The results demonstrate that ToF-SIMS is capable of delineating the structure of multi-organic layers in OLEDs and providing specific molecular information to aid deciphering the diffusion phenomena. Upon heat treatment, the solidity or hardness of the device was reduced. Complicated chemical reaction might occur at the NPB/ITO interface and results in the formation of a buffer layer, which terminates the upper diffusion of ions from underlying ITO.     

Enhanced hardness in B-doped ZnO thin films on fused quartz substrates by pulsed-laser deposition

B-doped ZnO thin films have been fabricated on fused quartz substrates using boron-ZnO mosaic target by pulsed-laser deposition technique, and the mechanical properties have been studied by nanoindentation continuous stiffness measurement technique and transmission electron microscope (TEM). Nanoindentation measurement revealed that the hardness of B-doped ZnO films, 9.32 ± 0.90 to 12.10 ± 1.00 GPa, is much greater than that of undoped ZnO films and very close to that of traditional semiconductor Si. The mean transmittance (%) is larger than 81% in the visible range (380-780 nm) for all the films, and the Hall effect measurement showed that the carrier density is around 2 × 10²⁰ cm⁻³ and the resistivity lower than 3 × 10⁻³ Ω cm. TEM characteristics show undoped thin films have more amorphous area between grains while the B-doped ZnO films have thin grain boundaries. We suggest that the grain boundaries act as the strain compensation sites and the decrease in thickness of grain boundaries enhances the hardness of the B-doped ZnO films.     

Study of HfSiO film prepared by electron beam evaporation for high-k gate dielectric applications

The purpose of this paper is to report some experimental results with HfSiO films formed on silicon substrates by electron beam evaporation (EB-PVD) and annealed at different temperatures. The images of atomic force microscope (AFM) indicated that HfSiO film annealed at 900 °C was still amorphous, with a surface roughness of 0.173 nm. X-ray photoelectron spectroscopy (XPS) analysis revealed that the chemical composition of the film was (HfO₂)₃(SiO₂) and Hf-Si-O bonds existed in the annealed film. Electrical measurements showed that the equivalent oxide thickness (EOT) was 4 nm, the dielectric constant was around 6, the breakdown voltage was 10 MV/cm, the fixed charge density was −1.2 × 10¹² cm⁻², and the leakage current was 0.4 μA/cm² at the gate bias of 2 V for 6 nm HfSiO film. The annealing after deposition effectively reduced trapping density and the leakage current, and eliminated hysteresis in the C-V curves. Annealing also induced SiO₂ growth at the interface.     

First Total Synthesis of 12-Hydroxy-13-methylpodocarpa-9, 11, 13-trien-3-one

12-Hydroxy-13-methylpodocarpa-9, 11, 13-trien-3-one 9 was isolated from the twigs ofCroton salutaris1. Many diterpenes exhibit significant bioactivities, such as antibac-terial and antitumour and 9 has a rare structure. In order to study the relationshipb…