XPS investigation of LPE garnet films

XPS spectra of YIG, YIG:Bi, YIG:Ca and YIG:Co(Ge, Ca) epitaxial garnet films were measured at room temperature. The positions of the main iron, yttrium, oxygen, bismuth, cobalt and lead spectral lines were determined and their changes with the surface treatments were investigated. It was found that divalent and trivalent states of iron and cobalt ions can be resolved, the chemical shifts being in oposite directions.The authors would like to thank Dr. J. imová for careful EPMA analysis of the samples.     

Kinetics of the photodissociation iodine laser with slow pumping

Systematic calculations of maximum inversion were performed for iodine photodissociation laser in dependence on the mixture composition. The flash-lamp radiation was modelled as emanating from an optically thin Xe plasma. Duration of the pumping pulse is about 300 s. The sensitivity of the model to the values of kinetic constants was also tested.     

Scalar gluonium candidates and the radiativeJ/ψ decays

We discuss productions of scalar gluonium candidates in the radiativeJ/ decays. The branching ratios of such productions are estimated on the basis of the Euler-Heisenberg effective Lagrangian for gluon-photon couplings. We mention that these estimates cannot be expected to be accurate to better than within a factor 2. We show that the radiativeJ/ decays probably invalidate gluoniumgg interpretation of the GAMS meson F₀(1590) and a narrow 0⁺⁺ stateS lying below 1 GeV. However, a possible wide scalar effective gluonium candidate(920) is shown not to be excluded by the data on the decayJ/. We also find that the experimental data about radiativeJ/ decays presumably agree with a recently suggested interpretation of F₀(1590) as being approximately a half-and-half mixture of pure 0⁺⁺ gluoniumgg andSU(3)_f singlet quarkoniumq¯q states.     

Quantitative characterization of chaotic instabilities in semiconductors

A method for quantitative characterization of chaotic dynamical systems is discussed. An electronic instrument for determining the number of independent variablesk ^*, involved in the motion, is described. It allows one to obtain these in real time from a single observable. The suggested technique has been applied to quantification of strange attractors underlying chaotic instabilities in semi-insulating GaAsCr, and n-Ge, irradiated with high energy electrons. In n-Ge, for instance, the measured numbersk ^* range from 2 to 4 depending on control parameters. These measurements reveal the highly deterministic nature of the observed chaotic oscillations. The physical mechanisms responsible for the current instabilities and chaotic behaviour are discussed.     

Phase Analysis of the Binary System of Cryolite (Na3AlF6) and Sodium Metasilicate (Na2SiO3)

The phase analysis of cryolite (Na₃AlF₆) and sodium metasilicate (Na₂SiO₃) was performed by thermal analysis. The eutectic system with a region of two immiscible substances at a concentration of Na₂SiO₃ between 42.8 and 46.3 mol‐% was identified and the eutectic temperature determined to (886±2) °C. Based on the results of mass‐loss measurements, it was assumed that the introduced Na₂SiO₃ reacts with Na₃AlF₆ due to the formation of some nonvolatile stable compounds. The stable reaction products were identified by X‐ray diffraction analysis and IR spectroscopy of the spontaneously cooled samples, which established the formation of NaF and stable amorphous aluminosilicate compounds.     

Multilayered Cu–Ti deposition on silicon substrates for chemiresistor applications

Abstract

On the perspective to develop CuO–TiO₂ MOS, multilayered Cu and Ti thin layers were alternatively deposited on silicon wafers using 25?keV Ar?+?ion beam sputtering and, subsequently, oxidized by thermal annealing in air at 400?°C for 24?h. The deposited films have variable ratios of the Cu and Ti % at. One of the main goal is to obtain such multilayers avoiding the presence of Cu–Ti–O compounds. The samples were characterized in terms of composition (by RBS and SIMS analyses) and morphology (by AFM and SEM investigations). In particular, SIMS maps allows to observe the spatial distribution and thickness of each phase of the Cu/Ti multilayers, and further to observe Cu diffusion and mixing with Ti, as well as phase separation of CuO and TiO₂ in the samples. The reasons of this effect represent an open issue that has to investigated, in order to improve the MOS fabrication.