Characteristics of thermoradiative destruction of BaS2O6·2H2O

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 55, No. 4, pp. 613–618, October, 1991.     

Geometric theory of invariants of groups generated by reflections

A survey of results on a number of problems of the geometric theory of invariants of groups generated by orthogonal and skew reflections is given. The paper is a continuation of the author's surveys published in 1980 and 1984.Translated from Itogi Nauki i Tekhniki, Seriya Problemy Geometrii, Vol. 21, pp. 155–208, 1989.     

The large-particle method in arbitrary nets and its application to the solution of problems in the aeroelasticity of a parachute

Modifications are introduced into the large-particle method to make it possible to use the method in arbitrary nonrectangular computing nets in the study of the flow of an ideal compressible gas over mobile thin permeable membranes. A problem in the aeroelasticity of a parachute is stated. An example is given of the solution of a problem in the stationary formulation for an axially symmetric parachute in the wake of a cylindrical leading body for supersonic flow.Translated fromDinamicheskie Sistemy, No. 6, 1987, pp. 16–22     

Excess noise peaks in porous silicon-based diode structures

Results of an experimental observation of the voltage oscillations associated with a discrete tunneling of holes in porous silicon at room temperature are presented. The noise characteristics of diode structures with a porous silicon interlayer formed on heavily boron-doped silicon single crystals are studied. Peaks of excessive noise are observed at frequencies of ～1 MHz, at which single-electron oscillations should be expected. The peak noise power is found to increase with current according to the ～2.5 power law and, at a current density of 0.15 A/cm², to exceed the noise power of the receiver by three to four orders of magnitude. The complex shape of the noise spectrum and its extension to the higher frequency region with increasing current are explained by the three-dimensionality of the system of nanometer-sized silicon grains embedded in insulating silicon dioxide of porous silicon.