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981.
The thermally stimulated properties of PbWO4 in the temperature range 90–400 K have been investigated on undoped and terbium-doped crystals after X-ray irradiation at 90 K. Doping with terbium changes the concentration of shallow traps, which are responsible for retrapping free electrons and holes. Light illumination can change the distribution of the traps. The optically stimulated luminescence is observed. The influence of light illumination on the TSL curves and emission properties is studied. The possible mechanism of TSL phototransformation is discussed.  相似文献   
982.
Results are presented that were obtained by measuring single-spin asymmetry in the inclusive production of neutral pions in the reaction p+p ↑→ π 0+X at x F≈0. A beam of 70-GeV protons was extracted directly from the vacuum chamber of the accelerator by means of a bent single crystal. For transverse momenta in the range 1.0<p T<3.0 GeV/c, the single-spin asymmetry independently measured by two detectors is zero within the errors. This result is in agreement with Fermilab data obtained at 200 GeV, but it is at odds with CERN data measured at 24 GeV.  相似文献   
983.
The forced magnetostriction and magnetization are measured in the easy-plane-type two-sublattice NiCl2 antiferromagnet (AFM) in the case where this AFM passes from the multidomain to a single-domain state. It is shown that, in accordance with the magnetoelastic nature of the multidomain state, the field dependences of the forced magnetostriction and magnetization are interrelated and affected by the transition from the multidomain to the single-domain state. The character of these dependences corresponds to the case where the magnetization and striction are proportional to the number of domains with an energetically favored orientation with respect to the external magnetic field.  相似文献   
984.
Electric and spatial characteristics of a pulse-periodic microsecond barrier discharge are investigated in different geometries—triangular prism, plate, and corrugated electrode—that are in contact with a dielectric plate and form a dihedral angle with it. It is established that, in the space of the dihedral angle, the regions of discharge represent alternating cylindrical layers with the axes lying on the contact line. The first conducting layer is formed at some distance from the contact edge of the electrode. The number of layers and their localization are determined by the angle formed between an electrode and the dielectric plate. A physical model explaining the main features of the structure formation is proposed.  相似文献   
985.
986.
The effective dielectric, piezoelectric, and elastic constants of two-phase macroscopically piezoactive 3-0 and 3-3 composites are calculated. It is assumed that one of the components is a polarized ferroelectric ceramic material and the other is an inactive material with variable elastic properties. The limiting case when the elastic compliances of the inactive material tend to infinity (porous ferroelectric ceramics) is considered. The adequacy of this model to production technologies of piezoelectric composites is discussed. Computational results are compared with experimental data.  相似文献   
987.
Matveev  V. I.  Kochkin  S. A. 《Technical Physics》2004,49(3):345-351

A method for evaluating the energy spectra and temperature dependences of the yield of neutral and charged clusters that consist of N≥5 atoms and are produced by ion bombardment of metals is proposed. The results are presented in the form of simple formulas. Theoretical energy spectra of clusters emitted as a result of bombarding niobium, tantalum, and iron targets by atomic ions of gold or xenon and temperature dependences of the yield of silver clusters produced by bombarding the targets with xenon ions are compared with experimental data.

  相似文献   
988.
Conditions are studied under which an electron beam and a volume discharge with a subnanosecond rise time of a voltage pulse are produced in air under atmospheric pressure. It is shown that the electron beam appears in a gas-filled diode at the front of the voltage pulse in ∼0.5 ns, has a half-intensity duration of ≤0.4 ns and an average electron energy of ∼0.6 of the voltage across the gas-filled diode, and terminates when the voltage across the gap reaches its maximum value. The electron beam with an average electron energy of 60 to 80 keV and a current amplitude of ≥70 A is obtained. It is assumed that the electron beam is formed from electrons produced in the gap due to gas ionization by fast electrons when the intensity of the field between the front of the expanding plasma cloud and the anode reaches its critical value. A nanosecond volume discharge with a specific power input of ≥400 MW/cm3, a density of the discharge current at the anode of up to 3 kA/cm2, and specific energy deposition of ∼1 J/cm3 over 3 to 5 ns is created.  相似文献   
989.
In the present paper, the methods of x-ray diffractometry are used to investigate the influence of plastic deformation on the long-range atomic order in alloys with L12, L12(M), and L12(MM) superlattices. The influence of ordering energy, initial values of the long-range order parameter, and average sizes of antiphase domains on the specific features of the dependence of long-range order parameter on the strain degree is considered. It is demonstrated that the wetted strain-induced order-disorder phase transition occurs with rapid accumulation of antiphase boundaries that play an important role in the destruction of long-range atomic order.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 21–32, September, 2004.  相似文献   
990.
The effect of uniform pressure on the character of metal-dielectric transitions in compensated weakly- and highly doped semiconductors (WHDCS) is considered. The influence of hybridization of resonance quasilocalized impurity states with band continuum states on the transition is shown. Minimum metallic conductivities in p-CdSnAs2 are determined for Mott and Anderson transitions. Special features of the metal-dielectric transformation in weakly-doped narrow- and high energy-gap semiconductors are discussed for the case of hydrogen-like impurities. Anderson localization in WHDCS is also considered. Phase diagrams are presented.  相似文献   
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