effect of surface modification on the properties of hydrogen-sensitive GaAs-based Schottky diodes

The surface of hydrogen-sensitive GaAs Schottky diodes is modified by nonpolishing etching and by producing quantum wells and quantum dots in the space-charge region of the semiconductor. The sensitivity to hydrogen is found to increase by a factor of 8–37 after the etching and by two or three orders of magnitude after the introduction of quantum wells and dots. It is shown that the increased sensitivity is associated with the lowering of the barrier at the Pd/GaAs interface, the retardation of hydrogen diffusion into GaAs due to the presence of strained quantum-size layers, and an increase in the recombination current. The presence of the recombination component is supported by luminescence from the quantum wells and quantum dots, as well as from the GaAs substrate. The etch composition is shown to be a decisive factor in raising the sensitivity.     

cos πρ theorems for δ-subharmonic functions

For ϕ a δ-subharmonic function, sharp results are obtained that connectA(r, ϕ), B(r, ϕ) andT(r, ϕ), whereA(r, ϕ)=inf_|z|=r ϕ(z),B(r, ϕ)=sup_|z|=r ϕ(z), andT(r, ϕ) is the Nevanlinna characteristics.     

Spectral manifestations of distorted forms of Pd-porphin at helium temperatures: The effect of the matrix

The occurrence of two noninteracting forms of Pd-porphin in the ground electronic state in a wide number of Shpolskii matrices maintained at liquid helium temperature was observed with the help of the finestructure phosphorescence spectra of these systems. The ratio between these forms can be varied in wide limits by choosing a particular matrix, which indicates that the matrix plays a significant role in the conformation formation of the tetrapyrrole macrocycle. Based on comparison both with the resonance Raman spectra and with the results of investigations of metal complexes of porphin by the selective spectroscopy methods, the shortwavelength spectral form has been shown to correspond to the planar molecular structure, whereas the longwavelength form has been attributed to a nonplanar molecular structure with the distortion of the porphin macrocycle of the saddle type. The results obtained indicate that the methods of fine structure spectroscopy make it possible to efficiently study distorted molecular structures stabilized in solid matrices at low temperatures.     

Investigations of low- and high-spin states of <Superscript>132</Superscript>La

The fusion evaporation reaction ¹²²Sn(¹⁴N, 4n)¹³²La was used to populate the high-spin states of ¹³²La at the beam energy of 60 MeV. A new band consisting of mostly E2 transitions has been discovered. This band has the interesting links to the ground state 2^- and the isomeric state 6^-. A new transition of energy 351 keV connecting the low-spin states of the positive-parity band based on the πh _11/2 ⊗ νh _11/2 particle configuration, has been found. This has played a very important role in resolving the existing ambiguities and inconsistencies in the spin assignment of the band head. Received: 12 August 2002 / Accepted: 18 March 2003 / Published online: 7 May 2003     

Numerical study of the effects of the rupture process of a secondary diaphragm in expansion tubes

The results of a numerical study are described in which the interactions of a primary shock wave with a secondary diaphragm in expansion tubes are taken into account. The developing wave pattern in the interacting process of the shock with a secondary diaphragm are visualized by many kinds of figures (e.g., the time-distance diagrams of the wave phenomena on the axis, the acoustic impedance contours, and the time histories of the pitot pressure on the axis), and the influences of the shape and rupture process of the diaphragm on the quality of the test gas are explored.     

A fast method to measure the thickness of removed layer from etching of SSNTD based on EDXRF

Solid state nuclear track detectors are commonly used for measurements of concentrations of radon gas and/or radon progeny. All these measurements depend critically on the thickness of the removed layer during etching. However, the thickness of removed layer calculated using the etching period does not necessarily provide a sufficiently accurate measure of the thickness. For example, the bulk etch rate depends on the strength of stirring during etching for the LR 115 detector. We propose here to measure the thickness of the removed layer by using energy-dispersive X-ray fluorescence spectrometry. In the present work, a reference silver nitrate pellet is placed beneath the LR 115 detector, and the fluorescence X-ray intensity for silver is then measured. We have found a linear relationship between the X-ray intensity and the thickness of the removed layer for LR 115 detector. This provides a fast method to measure the thickness of removed layer from etching of LR 115 detector. However, this method was found to be inapplicable for the CR-39 detector. Therefore, alternative methods have yet to be explored for the CR-39 detector.     

On a Result of R. Turner

We study the similarity of perturbed compact operators to operators of block-diagonal structure with respect to some family of orthogonal projection operators, which allows us to refine and essentially strengthen results due to R. Turner. We obtain information about the operator realizing the similarity transformation, present estimates for the eigenvalues and eigenvectors of the perturbed operator, and also study the inverse problem of spectral analysis.     

An algorithm to locate perinatal facilities in the municipality of Rio de Janeiro

In order to reduce infant mortality in the municipality of Rio de Janeiro it is desired to encourage all mothers-to-be to attend the appropriate health care facilities. A 3-level hierarchical prenatal–neonatal health care system is described together with a basic model for optimising accessibility to facilities. A genetic algorithm to solve the basic model is developed and some numerical experience reported. Extensions to the basic model and planned future research are briefly indicated.