Magnetic phases in Mn<Subscript>1</Subscript>_<Subscript>x</Subscript>Fe<Subscript>x</Subscript>WO<Subscript>4</Subscript> studied by neutron powder diffraction

The magnetic structures of Mn_1-xFe_xWO₄ with x = 0.0, 0.16, 0.21, 0.225, 0.232, 0.24, 0.27, 0.29, and 1.0 were refined from neutron powder diffraction data. The magnetic phase diagram could be completed in the coexistence range of different magnetic structures up to x = 0.29. For the magnetic state at 1.5 K a commensurate antiferromagnetic structure with a propagation vector = (±1/4, 1/2, 1/2) was found for x ⩽ 0.22 while the magnetic spins order with = (1/2, 0, 0) for x ≥ 0.22. In the latter phase, additionally, weak magnetic reflections indexed to an incommensurate ordering with = (- 0.214, 1/2, 0.457) occur in the diffraction pattern up to x = 0.29 indicating the occurence of a reentrant phase. For 0.12 ⩽ x ⩽ 0.29 the low temperature phases are separated from a magnetic high temperature phase showing only magnetic reflections indexed to a spin arrangement with = (1/2, 0, 0). The magnetic phase diagram is discussed qualitatively considering random superexchange between the statistically distributed Mn²⁺- and Fe²⁺-ions in the coexistence range 0.12 ⩽ x ⩽ 0.29 of different magnetic structures related to those of pure MnWO₄ and FeWO₄. Received 9 October 2002 Published online 14 March 2003     

Einfluß der Dilatation einer ebenen Phasengrenzfläche auf den Stoffdurchgang

The common methods for calculating the mass transfer across liquid-liquid interfaces in technical applications take into account the mass transfer resistances within the bulk phases. The transfer resistance of the interface and a possible coupling between the momentum and the mass transport is not taken into account. In the present paper a survey is given of theoretical approaches which can describe this coupling and the additional mass transfer resistance. A theory is proposed by Hampe which can be used to explain the coupling between momentum and mass transport employing thermodynamics of irreversible processes. On the basis of this work, the influence of the dilatation of a flat interface on the mass transfer is deduced. It is also concluded from this theory that the diffusion coefficients within the bulk phases are coupled near the thermodynamic equilibrium.     

Topochemically Controlled Redox Reactions in the System In/Sn/Cl

The difference in reactivity of the two modifications of InCl in solid state reactions with SnCl₂ is discussed. It is explained on the basis of semi‐empirical and ab initio calculations giving the density of states diagrams of InCl and the energies of possible disproportionation reactions. Their general features are discussed on the basis of a simple bonding picture for open‐packed structures involving inert pair elements. A detailed analysis of the DOS distribution allows to pinpoint the observed redox instability to a specific structural feature of α‐InCl.     

Dielectronic Recombination of Very Heavy Lithiumlike Ions

Hyperfine Interactions - An overview of measurements of dielectronic recombination (DR) with the heaviest lithiumlike ions is presented. The experiments have been carried out at the heavy ion...     

Realisation and metrological characterisation of thickness standards below 100 nm

High-accuracy film thickness measurements in the range below 100 nm can be made by various complex methods like spectral ellipsometry (SE), scanning force microscopy (SFM), grazing incidence X-ray reflectometry (GIXR), or X-ray fluorescence analysis (XRF). The measurement results achieved with these methods are based on different interactions between the film and the probe. A key question in nanotechnology is how to achieve consistent results on a level of uncertainty below one nanometre with different techniques.Two different types of thickness standards are realised. Metal film standards for X-ray techniques in the thickness range 10 to 50 nm are calibrated by GIXR with monochromatised synchrotron radiation of 8048 eV. The results obtained at four different facilities show excellent agreement. SiO₂ on Si standards for SE and SFM in the thickness range 6 to 1000 nm are calibrated by GIXR with monochromatised synchrotron radiation of 1841 eV and with a metrological SFM. Consistent results within the combined uncertainties are obtained with the two methods. Surfaces and interfaces of both types of standards are additionally investigated by transmission electron microscopy (TEM). PACS 61.10.Kw; 68.55.Jk; 06.20.Fn; 06.60.Mr; 07.79.Lh     

Existence globale pour l'équation de Smoluchowski continue non homogène et comportement asymptotique des solutions

We prove global existence of solutions to the continuous nonhomogeneous Smoluchowski equation for coagulation rates satisfying a more general structure condition than the Galkin–Tupchiev monotony hypothesis considered in (Ph. Laurençot, S. Mischler, Arch. Rational Mech. Anal. 162 (1) (2002) 45–99). The Smoluchowski coagulation rate fulfils this condition as well as some rates which vanish on the diagonal. Under the condition of positivity of the coagulation rate outside of the diagonal we prove that solutions tend to 0 in the large time asymptotic. These results depend on a new estimate from below for the dissipation rate of the L^p-norm, p>1. To cite this article: S. Mischler, M. Rodriguez Ricard, C. R. Acad. Sci. Paris, Ser. I 336 (2003).     

The effect of dissipation on coherent quantum tunnelling in a double-well system: Two-level model using an adjoint equation approach

We examine the effect of dissipation on coherent quantum tunnelling between the two lowest levels of a double-well system using an adjoint equation approach developed previously in the treatment of quantum-optical problems. Dissipation is modelled by a linear coupling to a bath of harmonic oscillators. The high frequency portion of the bath is adiabatically eliminated using a cumulant expansion technique, which generates frequency renormalisation terms. Making a low temperature assumption, an approximate two-level model is developed in the form of three coupled stochastic differential equations. With a decorrelation approximation, the two-level equations can be solved to yield familiar results. However, the adjoint equation also permits the use of direct stochastic simulation as a means of solution, and simulations are carried out for a range of parameters. A comparison with the decorrelation approximation is made.     

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