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51.
Simultaneous ionization and excitation of helium by electron impact is considered in an improved second Born approximation. The wave function of the low energy ejected electron is obtained in the field of residual He+ ion in 2s-state. The calculation has been done for the processe +He→e +He+(2s)+e in the coplanar asymmetric geometry with Hartree-Fock wave function of Byron and Joachain for the helium ground state and the results are compared with the absolute experimental data of Dupreet al [J. Phys. B25, 259 (1992)] at ∼ 5.5 keV incident energy. Our results are found to increase the ratio of the recoil peak to binary peak intensity by about 30% over the first Born results and thus to bring it closer to the experimental data.  相似文献   
52.
53.
In this paper the distribution of the likelihood ratio test for testing the reality of the covariance matrix of a complex multivariate normal distribution is investigated. Some simplifications in the noncentral distribution are made and the noncentral distribution is derived for the special case where the rank of the noncentrality matrix is two. In the null case exact expressions for the distribution are given up to p = 6, and percentage points are tabulated. These percentage points were compared with percentage points derived from an asymptotic expansion of the distribution, and the accuracy of the approximation was found to be sufficient for several practical situations.  相似文献   
54.
The regular solutions of generalized axisymmetric potential equation , a>−1/2 are called generalized axisymmetric potentials. In this paper, the characterizations of lower order and lower type of entire GASP in terms of their approximation error {En} have been obtained.  相似文献   
55.
In the present paper, a detailed investigation on the switching behaviour of a nonlinear Mach-Zehnder interferometer (NMZI) has been carried out using beam propagation method (BPM). A thorough investigation on input vs. output characteristic has been carried out by varying different parameters like length of the arms, refractive index of the linear/nonlinear arm, wavelength of the input beams and nonlinear coefficient of the material of the nonlinear arm. The input vs. output characteristic has also been investigated by shifting the balance point of the NMZI. The present paper provides a physically intuitive understanding of the effect of change in different parameters of the NMZI on its switching behaviour.  相似文献   
56.
The current density–voltage (JV) behavior of polymer PDY 132 thin films has been investigated in hole-only device configuration, viz., ITO/poly(ethylene-dioxthiophene):polystyrenesulphonate (PEDOT:PSS)/PDY 132/Au, as a function of polymer (PDY) film thickness (150 nm and 200 nm) and temperature (290–90 K). Hole current density was found to follow two distinct modes of conduction, (i) low electric field region I: ohmic conduction where slope 1, and (ii) intermediate and high electric field region II: non ohmic conduction where slope 2. Region I has been attributed to the transport of intrinsic background charge carriers while region II has been found to be governed by space charge limited currents (SCLC) with hole mobility strongly dependent on electric field and temperature. The respective hole transport parameters determined from the SCLC regime, μp0 is 3.7×10?3m2/Vs, μp(0,T) is 3.7×10?8m2/Vs, and zero field activation energy (Δ0) of 0.48 eV is obtained.  相似文献   
57.
It has been found that the states of the 2-charge extremal D1–D5 system are given by smooth geometries that have no singularity and no horizon individually, but a ‘horizon’ does arise after ‘coarse-graining’. To see how this concept extends to the 3-charge extremal system, we construct a perturbation on the D1–D5 geometry that carries one unit of momentum charge P. The perturbation is found to be regular everywhere and normalizable, so we conclude that at least this state of the 3-charge system behaves like the 2-charge states. The solution is constructed by matching (to several orders) solutions in the inner and outer regions of the geometry. We conjecture the general form of ‘hair’ expected for the 3-charge system, and the nature of the interior of black holes in general.  相似文献   
58.
Controllable and uniform doping of nanowires (NWs) is the ultimate challenge prior to their effective application. Si NWs amorphize and bend toward the impinging ions under ion irradiation as a result of viscous flow. We demonstrate that thermal annealing induces a full recovery of the crystalline phase corresponding to the unbending of the NWs. The competition between Solid Phase Epitaxy and Random Nucleation and Growth at the nanoscale is the key parameter controlling the recovery.  相似文献   
59.
Examples of progress in fabricating branched multi-terminal multi-wall and single-wall carbon nanotube junctions as predicted by nanotechnology simulations, using template growth and nanowelding techniques, respectively, have been briefly reviewed in this report. It is argued that similar general progress in computational nanotechnology-driven fabrication of applications in other nanomaterials such as nanotubes, fullerenes, nanowires, quantum dots, DNA molecules, and nanoparticle-based systems and devices are also feasible. This is because, at nanometer length scale, system sizes have shrunk sufficiently small such that it is feasible to simulate the structural, stability, and physical and chemical characteristics with very high accuracy predictive simulations.  相似文献   
60.
We introduce the subwavelength transmission of an effective surface plasmon beyond the light zone via the proximity interaction of convection electrons with a metal grating. A comparative analysis of dielectric homogenization and a finite-difference-time-domain simulation shows that out-of-phase-like modes (pi modes) have strong transmission below the cutoff frequency relying on the parametric condition of structural dimension and electronic energy. The synchronous spatial field and charge distribution of the pi mode system confirms the evanescent tunneling effect of the electron-coupled plasmons.  相似文献   
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