Rules of Boron–Nitrogen Doping in Defect Graphene Sheets: A First‐Principles Investigation of Band‐Gap Tuning and Oxygen Reduction Reaction Catalysis Capabilities

Introduction of defects and nitrogen doping are two of the most pursued methods to tailor the properties of graphene for better suitability to applications such as catalysis and energy conversion. Doping nitrogen atoms at defect sites of graphene and codoping them along with boron atoms can further increase the efficiency of such systems due to better stability of nitrogen at defect sites and stabilization provided by B?N bonding. Systematic exploration of the possible doping/codoping configurations reflecting defect regions of graphene presents a prevalent doping site for nitrogen‐rich BN clusters and they are also highly suitable for modulating (0.2–0.9 eV) the band gap of defect graphene. Such codoped systems perform significantly better than the platinum surface, undoped defect graphene, and the single nitrogen or boron atom doped defect graphene system for dioxygen adsorption. Significant stretching of the O?O bond indicates a lowering of the bond breakage barrier, which is advantageous for applications in the oxygen reduction reaction.     

Terahertz optical asymmetric demultiplexer based tree-net architecture for all-optical conversion scheme from binary to its other 2n radix based form

To exploit the parallelism of optics in data processing,a suitable number system and an efficient encoding/decoding scheme for handling the data are very essential.In the field of optical computing and parallel information processing,several number systems like binary,quaternary,octal,hexadecimal,etc.have been used for different arithmetic and algebraic operations.Here,we have proposed an all-optical conversion scheme from its binary to its other 2n radix based form with the help of terahertz optical asymmetric demultiplexer (TOAD) based tree-net architecture.     

Two-dimensional electronic transport in In0.53Ga0.47As quantum Wells

Transport properties of the electrons itinerant two dimensionality in a square quantum well of In_0.53Ga_0.47As are studied in the framework of Fermi-Dirac statistics including the relevant scattering mechanisms. An iterative solution of the Boltzmann equation shows that the ohmic mobility is controlled by LO phonon scattering at room temperature, but below 130 K alloy scattering is predominant. The calculated mobilities with a suitable value of the alloy scattering potential agree with the experimental results over a range of lattice temperature. For lattice temperatures below 25 K where the carrier energy loss is governed by the deformation potential acoustic scattering, the warm electron coefficient is found to be negative. Its magnitude decreases with increasing lattice temperature and is greater for larger channel widths. Values of the small-signal AC mobility of hot electrons at a lattice temperature of 4.2 K are obtained for different sheet carrier densities and channel widths. Cut-off frequencies around 100 GHz are indicated.Dedicated to H.-J. Queisser on the occasion of his 60th birthday     

Optimization in engineering design

This paper presents a method for solving a class of constrained optimization problems in finite-dimensional spaces. This type of problem usually arises in connection with parameter optimization in engineering design. Most often, these problems consist of incorporating upper and/or lower bounds on the variables in otherwise unconstrained optimization problems. The proposed method replaces the original optimization problem withm constraints (m>1) by a sequence of optimization problems with one constraint only. The theory behind this method is discussed in the subsequent sections.This research was supported by NSF Grant No. GK-4984.     

Cross sections and transverse single-spin asymmetries in forward neutral-pion production from proton collisions at sqrt[s]=200 GeV

Measurements of the production of forward high-energy pi(0) mesons from transversely polarized proton collisions at sqrt[s]=200 GeV are reported. The cross section is generally consistent with next-to-leading order perturbative QCD calculations. The analyzing power is small at x(F) below about 0.3, and becomes positive and large at higher x(F), similar to the trend in data at sqrt[s]< or =20 GeV. The analyzing power is in qualitative agreement with perturbative QCD model expectations. This is the first significant spin result seen for particles produced with p(T)>1 GeV/c at a polarized proton collider.     

Low-macroscopic field emission from nanocrystalline Al doped SnO<Subscript>2</Subscript> thin films synthesized by sol–gel technique

We have observed low-macroscopic field electron emission from wide bandgap nanocrystalline Al doped SnO₂ thin films deposited on glass substrates. The emission properties have been studied for different anode-sample spacings and for different Al concentrations in the films. The turn-on field and approximate work function were calculated and we have tried to explain the emission mechanism from this. The turn-on field was found to vary in the range 5.6–7.5 V/μm for a variation of anode sample spacing from 80–120 μm. The turn-on field was also found to vary from 4.6–5.68 V/μm for a fixed anode-sample separation of 80 μm with a variation of Al concentration in the films 8.16–2.31%. The Al concentrations in the films have been measured by energy dispersive X-ray analysis. Optical transmittance measurement of the films showed a high transparency with a direct bandgap ∼3.98 eV. Due to the wide bandgap, the electron affinity of the film decreased. This, along with the nanocrystalline nature of the films, enhanced the field emission properties. PACS 81.20.Fw; 61.10.-i; 79.70.+q