Photolysis of compounds with P−I and As−I bonds

Detailed experimental investigations are reported of the parameters of lasing on the transition²P_1/2→²P_3/2, λ = 1.3 μm of atomic iodine upon photodissociation of the molecules (CF₃)₂AsI and (CF₃)₂PI. The light source was an IFP-5000 flash lamp. The experimental data are used to determine the sequence of the basic reactions that accompany the photolysis of the molecules (CF₃)₂AsI and (CF₃)₂PI and to determine the energy parameters of the generated radiation.     

Thermographische Untersuchung des selektiven Charakters der Plastifizierung der Copolymerisate

Ohne Zusammenfassung     

Saturated nitrogen-containing heterocycles. 12. Stereochemical properties of hydroxyalkylpyrrolidines using 13C NMR spectroscopy

The ¹³C NMR spectra of fifteen compounds in a series of alkyl- and arylsubstituted cis-isomers of hydroxyalkylpyrrolidines have been recorded, and they have been fully interpreted on the basis of configurational and conformational assignments.For Communication 11, see [1].Translated from Khimiya Geterotsiklicheskikh Soedinenii, No. 9, pp. 1201–1204, September, 1988.     

Synthesis of the acetate of (±)-2,6-dimethylhepta-1,5-dien-3-ol — The racemic form of the sex pheromone of Pseudococcus comstocki

4-Methylpent-3-enal has been synthesized by the dehydration of trans-2-(1-hydroxy-1-methylethyl)-1-methoxycyclopropane, and this has been brought into reaction with propen-2-ylmagnesium bromide. Acetylation of the carbinol so formed gave the acetate of (±)-2,6-dimethylhepta-1,5-diene-3-ol — the racemic form of the sex pheromone of the Comstock mealybug.Scientific-Research Institute of Physicochemical Problems, V. I. Lenin Belorussian University, Minsk. Translated from Khimiya Prirodnykh Soedinenii, No. 5, pp. 747–748, September–October, 1988.     

Heat-stimulated currents in semi-insulating gallium arsenide

The energy spectrum of charge carrier traps of semi-insulating n-type gallium arsenide has been investigated by the method of heat-stimulated currents and the parameters characterizing these traps have been estimated. Trap acceptor levels with energies 0.37, 0.41 and 0.17, 0.28, 0.32, 0.34, 0.38, 0.40 eV have been found for samples with the specific resistivity 2.7 · 10⁷ and 1.6 · 10⁸ · cm, respectively. The results obtained are well explained within the framework of the theory of a compensated semiconductor.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, No. 11, pp. 22–26, November, 1971.The authors are grateful to A. P. Vyatkin, V. G. Voevodin, and E. V. Kozeev for kindly providing the gallium arsenide crystals and stimulating the research.