Preparation and optical properties of silver chromate self-assembly necklace structures

The silver chromate self-assembly necklace structures were synthesized using high-active acrylicamide template. The whole length of the necklace structure was between 1.2 and 1.5 μm. The product was composed of single crystalline nanorods with diameters of about 40 nm and lengths of 300 nm. The synthetic mechanism and product’s optical properties were also studied.     

CF<Subscript>4</Subscript> plasma-induced grafting of fluoropolymer onto multi-walled carbon nanotube powder

Grafting of fluoropolymer onto multi-walled carbon nanotube (MWCNTs) powder by CF₄ plasma treatment was investigated in this study. In order to achieve a uniform treatment of powder, a rotating barrel was designed and fixed between the two discharge electrodes. The influence of various plasma parameters, such as power and treatment time, on the fluorination of MWCNT surface was systematically analyzed by X-ray photoelectron spectroscopy (XPS), Fourier transformed infrared spectroscopy (FTIR) and scanning electron microscopy (SEM). The results revealed that a successful fluorination of MWCNT powder with a maximum of fluorine content of 12% could be achieved by using our plasma equipment. Our work provides a new way for the homogeneous fluorination of MWCNT powder and is valuable for industrial production. PACS 52.50.Dg; 52.40.Mj; 52.59. Ye; 52.77.-j     

Sb complexes and Zn interstitials in Sb-implanted ZnO epitaxial films

In the present work, post-annealing is adopted to investigate the formation and the correlation of Sb complexes and Zn interstitials in Sb-ion implanted ZnO films, by using Raman scattering technique and electrical characterizations. The damage of Zn sublattice, produced by ion bombardment process is discerned from the unrecovered E2 (L) peak in annealed high Sb+ dose implanted samples. It is suggested that the Zn sublattice may be strongly affected by the introduction of Sb dopant because of the formation of SbZn-2VZn complex acceptor. The appearance of a new peak at 510 cm 1 in the annealed high dose Sb+ implanted samples is speculated to result from (Zn interstitials-O interstitials) Zni-Oi complex, which is in a good accordance with the electrical measurement. The p-type ZnO is difficult to obtain from the Sb+ implantation, however, which can be realized by in-situ Sb doping with proper growth conditions instead.     

Efficient continuous-wave 908 nm Nd:YLF laser emission under direct 880 nm pumping

The quasi-three-level 908-nm continuous-wave laser emission under direct diode laser pumping at 880 nm into emitting level ⁴ F _3/2 of Nd:YLF have been demonstrated. An end-pumped Nd:YLF crystal yielded 4.7 W of output power for 11.8 W of absorbed pump power. The slope efficiency with respect to the absorbed pump power was 43.3%. Comparative results obtained for the pump with diode laser at 808 nm, into the highly-absorbing ⁴ F _5/2 level, are given in order to prove the advantages of the 880-nm wavelength pumping.     

All-solid-state CW frequency-doubling Nd:LuVO<Subscript>4</Subscript>/KTP laser with 2.3 W output power at 545 nm

Efficient and compact green-yellow laser output at 545 nm is generated by intracavity frequency doubling of a continuous-wave (CW) diode-pumped Nd:LuVO₄ laser at 1089 nm under the condition of suppressing the higher gain transition near 1066 nm. With 18.7 W of diode pump power and the frequency-doubling crystal KTiOPO₄(KTP), as high as 2.3 W of CW output power at 545 nm is achieved, corresponding to an optical-to-optical conversion efficiency of 12.3%; the output power stability over 4 h is better than 5.4%.     

In Situ Monitoring the Photolysis of Fluoranthene Adsorbed on Mangrove Leaves Using Fiber-Optic Fluorimetry

A newly established fiber-optic fluorimetry was used to determine the fluoranthene (Fla) adsorbed on the leaf surfaces of three mangrove species, such as Excoecarla agallocha (Ea), Kandelia candel (Kc) and Aegiceras corniculatum (Ac). With the method, the photolysis of Fla adsorbed on Ea, Kc and Ac leaf surfaces was studied. Under the laboratory conditions, using a high pressure mercury lamp as light source, photolysis was found to be the main transformation pathway for the Fla adsorbed on the three mangrove leaves, whereas disappearance of the adsorbed Fla as a result of volatilization and absorption could be negligible. The photolysis of Fla adsorbed on the three mangrove leaf surfaces followed first-order kinetics with photolysis rates of Fla in the order of Ac > Ea > Kc. The photolysis half lives of Fla adsorbed on the leaves were from 14.32 min to 69.31 min. The different initial concentrations of Fla adsorbed on the selected mangrove leaves did not affect the photolysis rates of Fla. The absorption characteristics of leaf-wax played an important role to influence the different photolysis rates of Fla adsorbed on these three mangrove species.     

Efficient and compact intracavity-frequency-doubled Nd:LuVO<Subscript>4</Subscript>/LBO laser at 538 nm end-pumped by a fiber-coupled laser diode

We report a diode-pumped Nd:LuVO₄ laser emitting at 1076 nm, based on the ⁴ F _3/2−⁴ I _11/2 transition, generally used for a 1066 nm emission. A power of 689 mW at 1076 nm has been achieved in continuous-wave (CW) operation with a fiber-coupled laser diode emitting 17.8 W at 809 nm. Intracavity second-harmonic generation (SHG) in CW mode has also been demonstrated with a power of 105 mW at 538 nm by using a LiB₃O₅ (LBO) nonlinear crystal.     

激光剥蚀-电感耦合等离子体质谱测定植物样品中的元素

采用193 nm准分子激光剥蚀-电感耦合等离子体质谱(LA-ICP-MS)对标准植物粉末样品(GBW07602-GBW07603灌木枝叶、GBW07604杨树叶、GBW07605茶叶、GBW08514烟草)中13种元素(Li,B,Na,Mg,Al,K,Ca,Cr,Mn,Fe,Ni,Cu,Ba)进行定量测试.向植物粉末样...     

Beam controller using nonlinear embedded optical transformation

Flexible and adjustable beam splitters, expanders/compressors and the cloak are presented based on a universal two-dimensional transformation formula for the embedded transformation optics. Nonlinear transformation results by the suggested formula under different conditions reveal several interesting phenomena and potential applications. All beam controllers are achieved by the nonlinear coordinate transformation.     

Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD

In_0.82Ga_0.18As epilayers were grown on InP substrates using a two-step growth technique by LP-MOCVD. A homogeneous low-temperature (450 °C) In_0.82Ga_0.18As buffer layer was introduced to improve the crystalline quality of epilayers. The influence of low-temperature buffer layer deposition condition, such as thermal annealing duration, on the crystalline quality of the In_0.82Ga_0.18As epilayer was investigated. Double-crystal X-ray diffraction measurement, Hall measurement, and Raman scattering spectrum were used to evaluate the In_0.82Ga_0.18As epilayers. Atomic force microscope was used to study the surface morphology. It is found that the In_0.82Ga_0.18As epilayer, with buffer layer thermal annealing for 5 min, exhibits the best crystalline quality. The change of the surface morphology of the buffer layer after thermal annealing treatment was suggested to explain the phenomenon.