第I种非对称三态叠加多模叠加态光场的高次和压缩——第一正交分量的N次方H压缩效应

构造了第孙中禹种强度不等的非对称三态叠加多模叠加态光场|ψ₁^(ABC)〉_q.利用多模压缩态理论研究了态|ψ₁^(ABC)〉_q第一正交分量高次和压缩.结果发现:①当构成态|ψ₁^(ABC)〉_q的三个多模相干态光场的强度不相等时,在一定条件下,态|ψ₁^(ABC)〉_q的第一正交分量可出现任意幂次的高次和压缩.②当上述的三个多模相干态光场强度相等时,态|ψ₁^(ABC)〉_q的第一正交分量的高次和压缩现象消失.在这种情况下,态|ψ₁^(ABC)〉_q的第一正交分量恒处于NH最小测不准态.     

Interior point cutting plane method for optimal power flow

In this paper, an interior point cutting plane method (IPCPM)is applied to solve optimal power flow (OPF) problems. Comparedwith the simplex cutting plane method (SCPM), the IPCPM is simpler,and efficient because of its polynomial-time characteristic.Issues in implementing IPCPM for OPF problems are addressed,including (1) how to generate cutting planes without using thesimplex tableau, (2) how to identify the basis variables inIPCPM, and (3) how to generate mixed integer cutting planes.The calculation speed of the proposed algorithm is further enhancedby utilizing the sparsity features of the OPF formulation. Numericalsimulations on IEEE 14-300-bus test systems have shown thatthe proposed method is effective.     

p型导电掺In的SnO_2薄膜的制备及表征

采用溶胶 凝胶提拉法成功地制备了p型导电掺In的SnO2 薄膜 .x射线衍射测试结果表明 ,掺In的SnO2 薄膜保持SnO2 的金红石结构 .吸收谱测试结果表明 ,掺In的SnO2 禁带宽度为 3 8eV .霍尔测量结果表明 ,空穴浓度与热处理温度有很大的关系 ,5 2 5℃为最佳热处理的温度 .铟锡原子比在 0 0 5— 0 2 0范围内 ,空穴的浓度与In的含量有直接的关系 ,并随In含量的增加而增加     

Rugged distal tips for CO2 laser medicine

Low-loss and rugged distal tips for CO₂ laser have been proposed and fabricated based on a commercially available stainless steel (St) pipe. A method of smoothening the inner surface of the St pipe with a rough inner surface is put forward. Fabrication parameters, transmission properties, and mechanical strength of the cyclic olefin polymer-coated silver hollow St distal tip are experimentally discussed.     

利用模式的对称性研究光子晶体光纤的色散

由光子晶体光纤的对称性可以得到模式分布的对称性，根据模式的对称性选择适当的展开函数，可以使计算量大大减少。计算了六角结构光子晶体光纤的色散特性，得到了波长在1．55pm处色散为零时，光子晶体光纤的结构参量所满足的方程。     

Phase formation and control of morphology in sputtered Cu-In alloy layers

The dependence of structural properties and surface morphology of Cu-In alloy layers on the composition and sputtering deposition sequence were investigated by X-ray diffraction, scanning electron microscopy and energy-dispersive X-ray spectroscopy. The properties of the co-sputtered alloy layers changed abruptly around the composition boundary when the Cu/In ratio reached 1/2. This can be explained by the effective heat of formation (EHF) model, which has been used to predict the sequence of phase formation for metal diffusion couples. The use of a co-sputtered alloy layer with a high In concentration was not suitable for fabricating solar cells, because the film had a very rough morphology due to large In islands formed on the CuIn₂ phase. However, it was possible to minimize this phase by In sputtering followed by co-sputtering with a Cu/In ratio of 1 (Cu-In/In/Glass). This permitted the fabrication of a homogeneous Cu-In alloy layer, which was not possible through the simple co-sputtering.     

Bi12TiO20纳米粉体的制备及其光吸收特性研究

以钛酸四丁酯和硝酸铋为原料 ,利用化学溶液分解法制备了Bi12 TiO2 0 纳米多晶粉体 .采用XRD和TEM对其结构和形貌进行了表征 .结合热重 差热 (TG DTA)分析 ,探讨了Bi12 TiO2 0 晶相的形成机理 .通过UV Vis漫反射谱的测定 ,研究了Bi12 TiO2 0 纳米晶粉体的光吸收特性 .结果显示 ,从组成为化学计量比的前驱液中可以很容易制得纯Bi12 TiO2 0 纳米晶粉体 ,该Bi12 TiO2 0 纳米晶粉体呈现了在很宽的波长范围内 (5 6 0～ 385nm )对光的吸收的特性 .     

酸糖蛋白手性柱分离6种手性化合物

通过考察缓冲液种类、浓度及其pH值对对映体在手性柱上的保留和分离行为的影响,以及流动相中加入不同种类、不同浓度的不带电荷的有机溶剂乙腈、甲醇、正丙醇、异丙醇、流动相流速和柱温对对映体分离能力的影响,优化了含碳手性中心的碱性药物苯丙哌林、酸性化合物MT-A5及MT-酸和含硫手性中心的质子泵抑制剂奥美拉唑、泮托拉唑、雷贝拉唑对映体分离条件,最佳手性分离条件为:苯丙哌林,0.05 mol/L磷酸二氢铵缓冲液(pH 3.0)-乙腈(95∶5,V/V)为流动相,流速为0.7 mL/m in,柱温为20℃;MT-A5及MT-酸,流动相为0.01 mol/L醋酸铵缓冲液(pH 5.0)-乙腈(74∶26,V/V),流速为0.9 mL/m in,柱温为20℃;泮托拉唑,流动相为10 mmol/L醋酸铵缓冲液(pH 5.5)-乙腈(93∶7,V/V),流速为0.9 mL/m in;柱温为20℃;奥美拉唑和雷贝拉唑,流动相为0.01 mol/L醋酸铵缓冲液(pH 3.0)-乙腈(95∶5,V/V),流速为0.7 mL/m in,柱温为20℃。实现了应用高效液相色谱法在α1-酸糖蛋白手性柱上对上述化合物的对映体分离,并成功用于手性药物合成中的对映体过量百分率的测定。     

改革物理实验课教学,提高实验课的教学质量

根据多年的物理实验教学经验，阐明了物理实验教学改革应重视的问题，并提出了几点改进措施。     

Quantum wire heterostructure for optoelectronic applications

Quantum wire (QWR) heterostructures suitable for optoelectronic applications should meet a number of requirements, including defect free interfaces, large subband separation, long carrier lifetime, efficient carrier capture. The structural and opticl properties of GaAs/AlGaAs and InGaAs/GaAs quantum wire (QWR) heterostructures grown by organometallic chemical vapor deposition on nonplanr substrates, which satisfy many of these criteria, are described. These crescent-shaped QWRs are formed in situ during epitaxial growth resulting in virtually defect free interfaces. Effective wire widths as small as 10nm have been achieved, corresponding to electron subband separations greater than K_BT at room temperature. The enhanced density of states at the QWR subbands manifests itself in higher optical absorption and emission as visualized in photoluminescence (PL), PL excitation, amplified spontaneous emission and lasing spectra of these structures. Effective carrier capture into the wires via connected quantum well regions, which is important for enhancing the otherwise extremely small capture cross section of these wires, has also been observed. Room temperature operation of GaAs/AlGaAs and strained InGaAs/GaAs QWR lasers with threshold currents as low as 0.6mA has been demonstrated.