p型导电掺In的SnO_2薄膜的制备及表征

采用溶胶 凝胶提拉法成功地制备了p型导电掺In的SnO2 薄膜 .x射线衍射测试结果表明 ,掺In的SnO2 薄膜保持SnO2 的金红石结构 .吸收谱测试结果表明 ,掺In的SnO2 禁带宽度为 3 8eV .霍尔测量结果表明 ,空穴浓度与热处理温度有很大的关系 ,5 2 5℃为最佳热处理的温度 .铟锡原子比在 0 0 5— 0 2 0范围内 ,空穴的浓度与In的含量有直接的关系 ,并随In含量的增加而增加     

Rugged distal tips for CO2 laser medicine

Low-loss and rugged distal tips for CO₂ laser have been proposed and fabricated based on a commercially available stainless steel (St) pipe. A method of smoothening the inner surface of the St pipe with a rough inner surface is put forward. Fabrication parameters, transmission properties, and mechanical strength of the cyclic olefin polymer-coated silver hollow St distal tip are experimentally discussed.     

利用模式的对称性研究光子晶体光纤的色散

由光子晶体光纤的对称性可以得到模式分布的对称性，根据模式的对称性选择适当的展开函数，可以使计算量大大减少。计算了六角结构光子晶体光纤的色散特性，得到了波长在1．55pm处色散为零时，光子晶体光纤的结构参量所满足的方程。     

高功率固体激光放大系统相位自校正方法研究

就光学元件间低频相位误差叠加提出用相关系数作为叠加相位结果的估计参量，并通过模拟计算和验证实验证明了相关系数能有效地对低频相位叠加结果进行比较估计，在此基础上就高功率固体激光放大系统中放大片的选取和安装提出了自校正方法并实现了自校正过程。     

Detection of low caloric power of coal by pulse fast-thermal neutron analysis

This paper introduces the analysis method and principle of pulse fast-thermal neutron analysis (PFTNA). A system for the measurement of low caloric power of coal by PFTNA is also presented. The 14 MeV pulse neutron generator and BGO detector and 4096 MCA were applied in this system. A multiple linear regression method applied to the data solved the interferential problem of multiple elements. The error of low caloric power between chemical analysis and experiment was less than 0.4 MJ/kg. This revised version was published online in July 2006 with corrections to the Cover Date.     

Phase formation and control of morphology in sputtered Cu-In alloy layers

The dependence of structural properties and surface morphology of Cu-In alloy layers on the composition and sputtering deposition sequence were investigated by X-ray diffraction, scanning electron microscopy and energy-dispersive X-ray spectroscopy. The properties of the co-sputtered alloy layers changed abruptly around the composition boundary when the Cu/In ratio reached 1/2. This can be explained by the effective heat of formation (EHF) model, which has been used to predict the sequence of phase formation for metal diffusion couples. The use of a co-sputtered alloy layer with a high In concentration was not suitable for fabricating solar cells, because the film had a very rough morphology due to large In islands formed on the CuIn₂ phase. However, it was possible to minimize this phase by In sputtering followed by co-sputtering with a Cu/In ratio of 1 (Cu-In/In/Glass). This permitted the fabrication of a homogeneous Cu-In alloy layer, which was not possible through the simple co-sputtering.     

The Characterisitic of Proton-Exchanged LiNbO3 Waveguide Formed by Different Proton Source

Benzoic acid as a source of proton is widely used in the technology of manufacture of proton exchanged ( PE) waveguide .But the diffusing speed of proton is too fast to make the waveguide stable in the pure benzoic acid. The characteristic of waveguide is improved with mixture of benzoic acid and lithium benzoate .     

Bi12TiO20纳米粉体的制备及其光吸收特性研究

以钛酸四丁酯和硝酸铋为原料 ,利用化学溶液分解法制备了Bi12 TiO2 0 纳米多晶粉体 .采用XRD和TEM对其结构和形貌进行了表征 .结合热重 差热 (TG DTA)分析 ,探讨了Bi12 TiO2 0 晶相的形成机理 .通过UV Vis漫反射谱的测定 ,研究了Bi12 TiO2 0 纳米晶粉体的光吸收特性 .结果显示 ,从组成为化学计量比的前驱液中可以很容易制得纯Bi12 TiO2 0 纳米晶粉体 ,该Bi12 TiO2 0 纳米晶粉体呈现了在很宽的波长范围内 (5 6 0～ 385nm )对光的吸收的特性 .     

改革物理实验课教学,提高实验课的教学质量

根据多年的物理实验教学经验，阐明了物理实验教学改革应重视的问题，并提出了几点改进措施。     

Quantum wire heterostructure for optoelectronic applications

Quantum wire (QWR) heterostructures suitable for optoelectronic applications should meet a number of requirements, including defect free interfaces, large subband separation, long carrier lifetime, efficient carrier capture. The structural and opticl properties of GaAs/AlGaAs and InGaAs/GaAs quantum wire (QWR) heterostructures grown by organometallic chemical vapor deposition on nonplanr substrates, which satisfy many of these criteria, are described. These crescent-shaped QWRs are formed in situ during epitaxial growth resulting in virtually defect free interfaces. Effective wire widths as small as 10nm have been achieved, corresponding to electron subband separations greater than K_BT at room temperature. The enhanced density of states at the QWR subbands manifests itself in higher optical absorption and emission as visualized in photoluminescence (PL), PL excitation, amplified spontaneous emission and lasing spectra of these structures. Effective carrier capture into the wires via connected quantum well regions, which is important for enhancing the otherwise extremely small capture cross section of these wires, has also been observed. Room temperature operation of GaAs/AlGaAs and strained InGaAs/GaAs QWR lasers with threshold currents as low as 0.6mA has been demonstrated.