Rugged distal tips for CO2 laser medicine

Low-loss and rugged distal tips for CO₂ laser have been proposed and fabricated based on a commercially available stainless steel (St) pipe. A method of smoothening the inner surface of the St pipe with a rough inner surface is put forward. Fabrication parameters, transmission properties, and mechanical strength of the cyclic olefin polymer-coated silver hollow St distal tip are experimentally discussed.     

利用模式的对称性研究光子晶体光纤的色散

由光子晶体光纤的对称性可以得到模式分布的对称性，根据模式的对称性选择适当的展开函数，可以使计算量大大减少。计算了六角结构光子晶体光纤的色散特性，得到了波长在1．55pm处色散为零时，光子晶体光纤的结构参量所满足的方程。     

斐索梯度折射率光纤透镜传感实验

采用LD泵浦的单纵模Nd：YVO4倍频激光器、梯度折射率光纤透镜等器件构成斐索梯度折射率光纤透镜传感实验仪．本文介绍了实验装置和实验原理，并给出了实验结果。     

Phase formation and control of morphology in sputtered Cu-In alloy layers

The dependence of structural properties and surface morphology of Cu-In alloy layers on the composition and sputtering deposition sequence were investigated by X-ray diffraction, scanning electron microscopy and energy-dispersive X-ray spectroscopy. The properties of the co-sputtered alloy layers changed abruptly around the composition boundary when the Cu/In ratio reached 1/2. This can be explained by the effective heat of formation (EHF) model, which has been used to predict the sequence of phase formation for metal diffusion couples. The use of a co-sputtered alloy layer with a high In concentration was not suitable for fabricating solar cells, because the film had a very rough morphology due to large In islands formed on the CuIn₂ phase. However, it was possible to minimize this phase by In sputtering followed by co-sputtering with a Cu/In ratio of 1 (Cu-In/In/Glass). This permitted the fabrication of a homogeneous Cu-In alloy layer, which was not possible through the simple co-sputtering.     

Spreading Code Design Using a Global Optimization Method

The performance of a code division multiple access system depends on the correlation properties of the employed spreading code. Low cross-correlation values between spreading sequences are desired to suppress multiple access interference and to improve bit error performance. An auto-correlation function with a distinct peak enables proper synchronization and suppresses intersymbol interference. However, these requirements contradict each other and a trade-off needs to be established. In this paper, a global two dimensional optimization method is proposed to minimize the out-of-phase average mean-square aperiodic auto-correlation with average mean-square aperiodic cross-correlation being allowed to lie within a fixed region. This approach is applied to design sets of complex spreading sequences. A design example is presented to illustrate the relation between various correlation characteristics. The correlations of the obtained sets are compared with correlations of other known sequences.     

A New Cytotoxic Acetogenin from the Seeds of Annona squamosa

A New Annonaceous acetogenin,squamostolide(1),was isolated from the seeds of Annona squamosa.Its structure was elucidated based on spectroscopic methods and comparison with known compounds.It is the first example of Annonaceous acetogenin with each of the two ends of the aliphatic chain bearing a γ-lactone.Thenew compound exhibited cytotoxic activity in vitro against bel-7402 and CNE2 human tumor cell lines.     

用数值方法分析微孔激光器出射光的近场特性

微孔激光器作为应用于近场光信息存储系统中的一种新型光源，它的出射光斑的近场特性对于近场光存储是十分重要的。针对纳米孔径运用角谱进行Fox-Li数值迭代，得到不同孔径微孔激光器的基模光强分布，然后运用二维非线性时域有限差分法分析微孔激光器出射端即微孔金属膜的近场光学性质，模拟计算了不同孔径和厚度的微孔金属膜的光强近场分布，从应用于近场光存储的角度，给出反映其近场光学特性的相关数据。发现由于TM模式下金属存在局域表面等离子增强效应，使得其出射强度比TE模式高一个数量级，从而更适于作为实际中近场光存储系统和原理试验的光学头。     

Bi12TiO20纳米粉体的制备及其光吸收特性研究

以钛酸四丁酯和硝酸铋为原料 ,利用化学溶液分解法制备了Bi12 TiO2 0 纳米多晶粉体 .采用XRD和TEM对其结构和形貌进行了表征 .结合热重 差热 (TG DTA)分析 ,探讨了Bi12 TiO2 0 晶相的形成机理 .通过UV Vis漫反射谱的测定 ,研究了Bi12 TiO2 0 纳米晶粉体的光吸收特性 .结果显示 ,从组成为化学计量比的前驱液中可以很容易制得纯Bi12 TiO2 0 纳米晶粉体 ,该Bi12 TiO2 0 纳米晶粉体呈现了在很宽的波长范围内 (5 6 0～ 385nm )对光的吸收的特性 .     

改革物理实验课教学,提高实验课的教学质量

根据多年的物理实验教学经验，阐明了物理实验教学改革应重视的问题，并提出了几点改进措施。     

Quantum wire heterostructure for optoelectronic applications

Quantum wire (QWR) heterostructures suitable for optoelectronic applications should meet a number of requirements, including defect free interfaces, large subband separation, long carrier lifetime, efficient carrier capture. The structural and opticl properties of GaAs/AlGaAs and InGaAs/GaAs quantum wire (QWR) heterostructures grown by organometallic chemical vapor deposition on nonplanr substrates, which satisfy many of these criteria, are described. These crescent-shaped QWRs are formed in situ during epitaxial growth resulting in virtually defect free interfaces. Effective wire widths as small as 10nm have been achieved, corresponding to electron subband separations greater than K_BT at room temperature. The enhanced density of states at the QWR subbands manifests itself in higher optical absorption and emission as visualized in photoluminescence (PL), PL excitation, amplified spontaneous emission and lasing spectra of these structures. Effective carrier capture into the wires via connected quantum well regions, which is important for enhancing the otherwise extremely small capture cross section of these wires, has also been observed. Room temperature operation of GaAs/AlGaAs and strained InGaAs/GaAs QWR lasers with threshold currents as low as 0.6mA has been demonstrated.