EPR and 1H and 13C dynamic nuclear polarization studies of a molecularly doped polymer: bisphenol A polycarbonate doped with trianisylamine and trianisylaminium perchlorate.

We have investigated the EPR and DNP behavior of a molecularly doped polymer modeling those used to transport electronic charge in electrophotography. The EPR spectra show no evidence of the superexchange reported for a closely related system based on tri-p-tolylamine. The difference may be due to larger charge-transfer matrix elements in the latter system. An unambiguous interpretation of the observed 1H DNP was rendered difficult by the unanticipated asymmetry of the EPR spectra. We report extensive data on the "three-spin" effect evident in the DNP-enhanced 13C NMR spectra, and comment on its potential for characterizing polymer interfaces.     

Correlations of two protons in relativisticdp-collisions

Two-proton correlations in thedpppn collisions of relativistic deuterons with protons are considered. These correlations give more information than inclusive proton spectra described in the framework of different deuteron structure function models because of uncertainty in the calculation of secondary interaction contribution (rescattering processes and final state interactions). We present the predictable calculations which show different behaviour of the correlation function for different deuteron structure function models in the kinematic region where contributions of secondary interactions are negligible.     

Microprobe photoluminescence measurement on heteroepitaxial GaAs on Si grown by metalorganic chemical vapor deposition

Microprobe photoluminescence (PL) measurements at 77 K were used to study the effect of the GaAs layer thickness on optical quality and variations in strain in GaAs/Si containing microcracks. PL peak intensities increase with the increase in thickness of GaAs layers and the peak intensity for the 5.5 m GaAs layer was a factor of 20 higher than those for the 1–2 m GaAs layers. Spatial nonuniformities in strain in the vicinity of two microcracks reveal that stress was almost released at the intersection of two microcracks and is maximum half way between two microcracks.On leave from Semiconductor Materials Lab., Korea Institute of Science and Technology (KIST)