Noncommutative Wormholes in f(R) Gravity with Lorentzian Distribution

In this paper, we derive some new exact solutions of static wormholes in f(R) gravity supported by the matter possesses Lorentzian density distribution of a particle-like gravitational source. We derive the wormhole’s solutions in two possible schemes for a given Lorentzian distribution: assuming an astrophysically viable F(R) function such as a power-law form and discuss several solutions corresponding to different values of the exponent (here $F =\frac{df}{dR}$ ). In the second scheme, we consider particular form of two shape functions and have reconstructed f(R) in both cases. We have discussed all the solutions with graphical point of view.     

Hydrogen-Bonding Induced Alternate Stacking of Donor (D) and Acceptor (A) Chromophores and their Supramolecular Switching to Segregated States

This paper reports comprehensive studies on the mixed assembly of bis-(trialkoxybenzamide)-functionalized dialkoxynaphthalene (DAN) donors and naphthalene-diimide (NDI) acceptors due the cooperative effects of hydrogen bonding, charge-transfer (CT) interactions, and solvophobic effects. A series of DAN as well as NDI building blocks have been examined (wherein the relative distance between the two amide groups in a particular chromophore is the variable structural parameter) to understand the structure-dependent variation in mode of supramolecular assembly and morphology (organogel, reverse vesicle, etc.) of the self-assembled material. Interestingly, it was observed that when the amide functionalities are introduced to enhance the self-assembly propensity, the mode of co-assembly among the DAN and NDI chromophores no longer remained trivial and was dictated by a relatively stronger hydrogen-bonding interaction instead of a weak CT interaction. Consequently, in a highly non-polar solvent like methylcyclohexane (MCH), although kinetically controlled CT-gelation was initially noticed, within a few hours the system sacrificed the CT-interaction and switched over to the more stable self-sorted gel to maximize the gain in enthalpy from the hydrogen-bonding interaction. In contrast, in a relatively less non-polar solvent such as tetrachloroethylene (TCE), in which the strength of hydrogen bonding is inherently weak, the contribution of the CT interaction also had to be accounted for along with hydrogen bonding leading to a stable CT-state in the gel or solution phase. The stability and morphology of the CT complex and rate of supramolecular switching (from CT to segregated state) were found to be greatly influenced by subtle structural variation of the building blocks, solvent polarity, and the DAN/NDI ratio. For example, in a given D-A pair, by introducing just one methylene unit in the spacer segment of either of the building blocks a complete change in the mode of co-assembly (CT state or segregated state) and the morphology (1D fiber to 2D reverse vesicle) was observed. The role of solvent polarity, structural variation, and D/A ratio on the nature of co-assembly, morphology, and the unprecedented supramolecular-switching phenomenon have been studied by detail spectroscopic and microscopic experiments in a gel as well as in the solution state and are well supported by DFT calculations.     

Ion Interactions with a New Ditopic Naphthalimide‐Based Receptor: A Photophysical,NMR and Theoretical (DFT) Study

A new multi‐component chemosensor system comprising a naphthalimide moiety as fluorophore is designed and developed to investigate receptor–analyte binding interactions in the presence of metal and non‐metal ions. A dimethylamino moiety is utilized as receptor for metal ions and a thiourea receptor, having acidic protons, for binding anions. The system is characterized by conventional analytical methods. The absorption and fluorescence spectra of the system consist of a broad band typical for an intramolecular charge transfer (ICT). The effects of various metal‐ion additives on the spectral behavior of the present sensor system are examined in acetonitrile. It is found that among the metal ions studied, alkali/alkaline earth‐metal ions and transition‐metal ions modulate the absorption and fluorescence spectra of the system. As an additional feature, the anion signaling behavior of the system in acetonitrile is studied. A decrease in fluorescence efficiency of the system is observed upon addition of fluoride and acetate anions. Fluorescence quenching is most effective in the case of fluoride ions. This is attributed to the enhancement of the photoinduced electron transfer from the anion receptor to the fluorophore moiety. Hydrogen‐bond interactions between the acidic NH protons of the thiourea moiety and the F^? anions are primarily attributed to the fluoride‐selective signaling behavior. Interestingly, a negative cooperativity for the binding event is observed when the interactions of the system are studied in the presence of both Zn²⁺ and F^? ions. NMR spectroscopy and theoretical calculations are also carried out to better understand the receptor–analyte binding.     

Stress induced half-metallicity in surface defected germanium nanowires

Germanium nanowires (GeNWs) with single, double, quadruple and octuple surface dangling bonds (SDBs) are investigated using density-functional-theory calculations. We show that single SDB defected GeNWs remain semiconducting as their non-defected form while double or multiple SDB defects result in either semiconducting or metallic GeNWs, depending on the defect's locations on the surface. More importantly, we show that the electronic properties of surface defected GeNWs can also be fine-tuned by applying tensile and compressive strains. Upon the right loading, the surface defected GeNWs become half-metallic. In addition, we determine that the surface defected GeNWs can be classified into three classes: (1) GeNWs with zero magnetic moment, which are either metallic or semiconducting; (2) GeNWs with net magnetic moments equal to the number of SDBs, which are semiconducting with distinct spin-up and spin-down configurations; and (3) GeNWs with net magnetic moments significantly lower than the number of SDBs. We also find that only the defected GeNWs that fall under (3) are potentially half-metallic. Our results predict that half-metallic GeNWs can be obtained via engineering of the surface defects and the structures without the presence of impurity dopants.     

One-pot synthesis of strong solid state emitting mono-cyclometalated iridium(III) complexes: study of their aggregation induced enhanced phosphorescence

Strong solid-state greenish-blue emitting, mono-cyclometalated iridium complexes, [Ir(ppy)(PPh(3))(2)(H)(Cl)], 2a and [Ir(F(2)ppy)(PPh(3))(2)(H)(Cl)], 2b [ppyH = 2-phenylpyridine; F(2)ppyH = 2-(2',4'-difluoro)phenylpyridine], have been synthesized by a convenient route. The 'aggregation induced enhanced phosphorescence (AIEP)' activity exhibited by these complexes has been rationalized.     

Electrical and optical characteristics of porous silicon impregnated with LaF3 by a novel chemical bath technique

The structural, electrical and optical characteristics of porous silicon (PS) due to the impregnation of LaF₃ into PS by a novel chemical-bath deposition (CBD) technique have been investigated in this article. Without removing the PS from the anodization chamber the impregnation with LaF₃ has been done by reacting LaCl₃ with HF in the same chamber at room temperature. The impregnation of LaF₃ was confirmed by the SEM on the cross-section of the LaF₃/PS/Si system and EDX. The modification of PS surface by LaF₃ had direct influence on the electrical and optical properties of PS. Electrical properties of Ag/LaF₃/PS/p-Si/Ag structures were studied through the current-voltage (I-V) and capacitance-voltage (C-V) characteristics. Formation of metal-insulator-semiconductor (MIS) diode was evident whose forward current increased with annealing. A diode factor of about 2.4 has been obtained for the annealed heterostructure indicating a high density of trap states. The C⁻²-V curves of all samples showed negative flat band voltage of around −2 V confirming a large number of fixed positive charges in the LaF₃. The photoluminescence (PL) intensity of the LaF₃-impregnated PS showed aging for the as-deposited samples, but when annealed PS structure recovered the PL intensity. Experimental results show that the optimized chemical bath passivation process for the LaF₃ on porous silicon could enable the porous silicon to be an important material for photonic application.     

A systematic DFT study of hydrogen diffusion on transition metal surfaces

Density functional theory calculations of the diffusion of hydrogen atoms on 23 transition metal surfaces in their closed-packed structure have been carried out. The d-metals chosen are all the metals in the 4th, 5th and 6th periods, from Sc to Au, except Mn, Tc, and Hf. Potential energy surfaces of H atom on these metals are constructed and the diffusion barrier from one minima to another is compared with nudged elastic band calculations. Most of the minimum energy paths have a single activation barrier, except on two surfaces where a dip in the bridge position (W and Pt) is observed. Trends in the adsorption and activation energies are observed where the former is explained with the d-band model. All the activation energies for diffusion are relatively low, or from 0.04 eV for Pt to 0.28 eV on Y and Zr. Finally, we estimate the temperature where tunneling effects should start to take place.     

Nanoporous structures of polyimide induced by Ar ion beam irradiation

The surface morphology evolution of polyimide (PI) that was treated with an Ar ion beam was explored using a hybrid ion beam system. A hole-like nanostructure formed on PI during the Ar ion beam treatment at a lower fluence, but PI formed 3D porous nanostructures with a mean diameter of ∼90 nm at a higher fluence. The chemical binding energy and the composition of the Ar ion irradiated PI were analyzed using FT-IR and XPS spectra, which revealed that the polymer chain scissioning increased with increasing Ar ion treatment duration, i.e., fluence. The surface hardness and the elastic modulus of PI increased from 1.17 to 1.62 GPa and 4.06 to 5.41 GPa, respectively, with respect to the Ar ion beam treatment duration.     

Singularity-free dark energy star

We propose a model for an anisotropic dark energy star where we assume that the radial pressure exerted on the system due to the presence of dark energy is proportional to the isotropic perfect fluid matter density. We discuss various physical features of our model and show that the model satisfies all the regularity conditions and is stable as well as singularity-free.