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121.
本文在自旋电荷相统一的非费米液体前提下,同时考虑相一作用V及层间随着作用TJ,推导出非费米液体层间隧道的超导转变温度Tc的解析式,给出了临界耦合因子λTJc,λc与α关系式,并且数值计算了零温能隙随TJ及α的变化趋势。 相似文献
122.
123.
C. C. Ling Y. Y. Shan B. K. Panda S. Fleischer C. D. Beling S. Fung 《Applied Physics A: Materials Science & Processing》1995,60(6):545-549
Recent positron lifetime studies made on the Au/GaAs interface with an applied electric field returning a significant fraction of bulk implanted positrons to the interface have revealed the presence of microvoids( 1 nm diameter) at the interface. In this work an attempt has been made to study these microvoids by observing the Doppler broadening on the annihilation radiation coming from them. This is done both by observing theS-parameter as a function of applied bias and by applying the generalized least-squares method to the deconvolution of the annihilation radiation lineshape. The general conclusion is that the Doppler-broadened data are consistent with the majority of positrons trapping into microvoids, probably associated with grain boundaries. The data suggest that these open volume defects are more associated with the Au film rather than the Au-Ga alloyed interfacial region.Paper presented at the 132nd WE-Heraeus-Seminar on Positron Studies of Semiconductor Defects, Halle, Germany, 29 August to 2 September 1994 相似文献
124.
125.
In this study, a novel method for dynamic parallel image acquisition and reconstruction is presented. In this method, called k-space inherited parallel acquisition (KIPA), localized reconstruction coefficients are used to achieve higher reduction factors, and lower noise and artifact levels compared to that of generalized autocalibrating partially parallel acquisition (GRAPPA) reconstruction. In KIPA, the full k-space for the first frame and the partial k-space for later frames are required to reconstruct a whole series of images. Reconstruction coefficients calculated for different segments of k-space from the first frame data set are used to estimate missing k-space lines in corresponding k-space segments of other frames. The local determination of KIPA reconstruction coefficients is essential to adjusting them according to the local signal-to-noise ratio characteristics of k-space data. The proposed algorithm is applicable to dynamic imaging with arbitrary k-space sampling trajectories. Simulations of magnetic resonance thermometry using the KIPA method with a reduction factor of 6 and using dynamic imaging studies of human subjects with reduction factors of 4 and 6 have been performed to prove the feasibility of our method and to show apparent improvement in image quality in comparison with GRAPPA for dynamic imaging. 相似文献
126.
L. Tong Y. Tian Q. Y. Wang Y. S. Ling 《International Journal of Infrared and Millimeter Waves》2006,27(9):1307-1314
The paper introduces a special system calibration technology in s-parameters measurement of microwave and millimeter wave
devices. The 8-term errors module is built by analyzing the signals flowing in the measurement system. Then the calibration
technology using non-standard kits is designed on the base. Finally, the experiment using the calibration technology is introduced. 相似文献
127.
基于孪生色锁噪声场的互相关效应,从理论上研究了倒V形(RV)四能级飞秒量级差频极化拍与极化拍中五阶非线性极化率,并提出了用一种相位敏感的方法来研究多能级原子相干造成的三光子六波混频过程.在抽泵光束为窄带末端情况下,场关联对信号和极化率的影响都很弱,在非窄带情况下,场关联会使极化强度自相干信号和极化拍信号产生关于零延时的不对称性和时域扫描上的辐射与物质失谐阻尼振荡(RDO),而极化率会产生频域扫描上的RDO振荡.参考光信号是一路传播方向和六波混频信号稍有区别的双光于非简并四波混频信号.五阶非线性响应则由享生
关键词:
外差法
吸收
色散
非线性极化 相似文献
128.
129.
Baowei Qiao Jie Feng Yun Ling Ting’ao Tang Bomy Chen 《Applied Surface Science》2006,252(24):8404-8409
The effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge2Sb2Te5 film. The addition of Si in the Ge2Sb2Te5 film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge2Sb2Te5 film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge2Sb2Te5 film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory. 相似文献
130.
Characterization of iron surface modified by 2-mercaptobenzothiazole self-assembled monolayers 总被引:1,自引:0,他引:1
A self-assembled monolayer of 2-mercaptobenzothiazole (MBT) adsorbed on the iron surface was prepared. The films were characterized by electrochemical impedance spectroscopy (EIS), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared reflection spectroscopy (FT-IR) and scanning electron microscopy (SEM). Besides, the microcalorimetry method was utilized to study the self-assembled process on iron surface and the adsorption mechanism was discussed from the power-time curve. The results indicated that MBT was able to form a film spontaneously on iron surface and the presence of it could protect iron from corrosion effectively. However, the assembling time and the concentration influence the protection efficiency. Quantum chemical calculations, according to which adsorption mechanism was discussed, could explain the experimental results to some extent. 相似文献